Untitled
Abstract: No abstract text available
Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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DMN32D2LFB4
AEC-Q101
DFN1006H4-3
J-STD-020
MIL-STD-202,
DS31124
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max
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Original
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DMN32D2LFB4
AEC-Q101
DFN1006H4-3
DS31124
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 30V 1.2 @ VGS = 4V 1.5 @ VGS = 2.5V 2.2 @ VGS = 1.8V • ID max TA = +25C 415mA 370mA 300mA Description This MOSFET has been designed to minimize the on-state resistance
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DMN32D2LFB4
415mA
370mA
300mA
DS31124
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max
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Original
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DMN32D2LFB4
AEC-Q101
DFN1006H4-3
DS31124
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PDF
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DMN32D2LFB4
Abstract: DFN1006H4-3 J-STD-020D
Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max
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Original
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DMN32D2LFB4
AEC-Q101
DFN1006H4-3
J-STD-020D
DS31124
DMN32D2LFB4
DFN1006H4-3
J-STD-020D
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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DMN32D2LFB4
AEC-Q101
DFN1006H4-3
J-STD-020
DS31124
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PDF
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DMN32D2LFB4
Abstract: DFN1006-3 DFN1006H4-3
Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed
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Original
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DMN32D2LFB4
AEC-Q101
DFN1006H4-3
J-STD-020C
DS31124
DMN32D2LFB4
DFN1006-3
DFN1006H4-3
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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DMN32D2LFB4
AEC-Q101
X2-DFN1006-3
J-STD-020
MIL-STD-202,
DS31124
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PDF
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