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    Maxim Integrated Products DS2016R-100+

    IC SRAM 16KBIT PARALLEL 24SOIC
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    Maxim Integrated Products DS2016R-100

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    DS2016R Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DS2016R Dallas Semiconductor 2K x 8 3V/5V Operation Static RAM Original PDF
    DS2016R Maxim Integrated Products Original PDF
    DS2016R-100 Dallas Semiconductor SRAM Chip, Asynchronous, 16Kbit, 3.3V|5V Supply, Industrial, SOIC, 24-Pin Original PDF
    DS2016R-100 Maxim Integrated Products 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016R-100 Maxim Integrated Products Original PDF
    DS2016R-100+ Maxim Integrated Products 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016R-100+ Maxim Integrated Products IC SRAM CHIP ASYNC SINGLE 3.3 5V 16KBIT 2KX8 100NS 24SOIC Original PDF
    DS2016R-150 Dallas Semiconductor SRAM Chip, Asynchronous, 16Kbit, 3.3V|5V Supply, Industrial, SOIC, 24-Pin Original PDF
    DS2016R-150 Maxim Integrated Products Original PDF
    DS2016R-150+ Maxim Integrated Products 2K x 8 3V/5V Operation Static RAM. Lead-free Original PDF

    DS2016R Datasheets Context Search

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    DS2016

    Abstract: DS2016R DS2016S SEPTEMBER10
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: September 10, 1999 Product Change Notice – I91501 Subject: Package Obsolescence - DS2016S 2K x 8 3V/5V Operation Static RAM Description of Change: Effective October 30, 1999, Dallas Semiconductor will no longer produce or sell the DS2016S 2K


    Original     		PDF I91501 DS2016S DS2016S DS2016S. DS2016 DS2016R. DS2016R SEPTEMBER10

    DS2016

    Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
    Text: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § § § § § § § § § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V


    Original     		PDF DS2016 DS2016 24-pin application15 DS2016S DS2016-100 DS2016-150 DS2016R

    DS2016

    Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
    Text: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V


    Original     		PDF DS2016 DS2016 24-pin DS2016S DS2016-100 DS2016-150 DS2016R

    DS2016

    Abstract: DS2016-100 DS2016-150 DS2016R
    Text: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = 25°C VCC = 3.0V - 100nA max at tA = 25°C VCC = 5.5V - 1µA max at tA = 60°C VCC = 5.5V


    Original     		PDF DS2016 100nA DS2016-100 100ns DS2016-150 150ns 250ns DS2016 DS2016-100 DS2016-150 DS2016R

    DS2016

    Abstract: DS2016-100 DS2016R
    Text: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V


    Original     		PDF DS2016 100nA DS2016-100 100ns 250ns 24-pin DS2016 100pF DS2016-100 DS2016R

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2016 2 k x 8 3 V/5V Operation Static RAM PIN ASSIGNMENT FEATURES • Low-power CMOS design ■ Standby current - 50 nA max at îa = 25°C Vcc = 3.0V - 100 nA max at îa = 25°C V c c = 5.5V - 1 |^A max at tA = 60°C VCc = 5.5V ■ Full operation for V Cc = 5.5V to 2.7V


    OCR Scan     		PDF DS2016 DS2016 24-pin DS2016S