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    DS1270 Price and Stock

    Rochester Electronics LLC DS1270AB-70#

    DS1270 3.3V 16MBIT NONVOLATILE S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1270AB-70# Bulk 1,156 2
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    Rochester Electronics LLC DS1270AB-70IND#

    IC NVSRAM 16MBIT PARALLEL 36EDIP
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    DigiKey DS1270AB-70IND# Bulk 883 2
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    Maxim Integrated Products DS1270Y-70#

    IC NVSRAM 16MBIT PARALLEL 36EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1270Y-70# Tube 161 1
    • 1 $244.8
    • 10 $244.8
    • 100 $235.78407
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    Rochester Electronics LLC DS1270W-150#

    IC NVSRAM 16MBIT PARALLEL 36EDIP
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    DigiKey DS1270W-150# Tube 117 2
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    Rochester Electronics LLC DS1270W-150

    IC NVSRAM 16MBIT PARALLEL 36EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1270W-150 Tube 94 2
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    Find more DS1270 price and stock on Findchips.com

    DS1270 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DS1270AB Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-100 Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-100 Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270AB-100 Maxim Integrated Products 100 ns, Vcc=5V±5%, 16 M nonvolatile SRAM Original PDF
    DS1270AB-100# Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270AB-100IND Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-100-IND Maxim Integrated Products 100 ns, Vcc=5V±5%, 16 M nonvolatile SRAM Original PDF
    DS1270AB-70 Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-70 Maxim Integrated Products 70 ns, Vcc=5V±5%, 16 M nonvolatile SRAM Original PDF
    DS1270AB-70# Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270AB-70IND Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-70-IND Maxim Integrated Products 70 ns, Vcc=5V±5%, 16 M nonvolatile SRAM Original PDF
    DS1270AB-70IND# Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270W Maxim Integrated Products 3.3V 16Mb Nonvolatile SRAM Original PDF
    DS1270W-100 Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270W-100# Maxim Integrated Products 3.3V 16Mb Nonvolatile SRAM Original PDF
    DS1270W-100IND Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270W-100-IND Maxim Integrated Products 3.3 V 16 Mb Nonvolatile SRAM Original PDF
    DS1270W-100IND# Maxim Integrated Products 3.3V 16Mb Nonvolatile SRAM Original PDF
    DS1270W-150 Maxim Integrated Products 16M Nonvolatile SRAM Original PDF

    DS1270 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16MB SRAM

    Abstract: 1024k DS1270W DS1249W DS1265W 36-DIP
    Text: INDUSTRY’S HIGHEST DENSITY 3.3V NONVOLATILE SRAMs Densities up to 16Mb Protect Data for 3.3V Systems The DS1249W, DS1265W, and DS1270W are low-voltage, high-density NV SRAMs designed to preserve critical system data during power loss. Each of these dual in-line encapsulated modules operates on a single 3.3V power supply and employs


    Original     		PDF DS1249W, DS1265W, DS1270W 100ns 150ns DS1249W DS1265W 1024k 2048k 16MB SRAM 36-DIP

    DS1270Y-70IND

    Abstract: DS1270 DS1270AB DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-70
    Text: 19-5615; Rev 11/10 DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


    Original     		PDF DS1270Y/AB DS1270Y) DS1270AB) MDT36 DS1270Y-70IND DS1270 DS1270AB DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-70

    DS1270W

    Abstract: No abstract text available
    Text: 19-5614; Rev 11/10 DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


    Original     		PDF DS1270W 100ns MDT36 DS1270W

    DS1270W

    Abstract: No abstract text available
    Text: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1270W 100ns DS1270W 150ns 36-PIN, 740MIL 36-PIN

    DS1270

    Abstract: DS1270W DS1270W-100 DS1270W-150
    Text: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1270W 100ns DS1270W 150ns 36-PIN, 740MIL 36-PIN DS1270 DS1270W-100 DS1270W-150

    DS1270W

    Abstract: No abstract text available
    Text: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1270W 100ns 36-Pin 740mil 100pF 150ns DS1270W

    DS1270

    Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70
    Text: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


    Original     		PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin 600-mil DS1270Y/AB 740-MIL 36-PIN DS1270 DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB 16M Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


    Original     		PDF DS1270Y/AB DS1270Y) DS1270AB) DS1270 36-pin 600-mil DS1270Y/AB 740-MIL

    Untitled

    Abstract: No abstract text available
    Text: 19-5615; Rev 11/10 DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


    Original     		PDF DS1270Y/AB DS1270Y) DS1270AB) MDT36

    DS1270

    Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70
    Text: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin 600-mil DS1270Y/AB 740-MIL 36-PIN DS1270 DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70

    DS1270

    Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-70
    Text: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1270Y/AB DS1270Y) DS1270AB) 100ns DS9034PC DS9034PCI DS1270 DS1270AB DS1270AB-100 DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-70

    DS1270

    Abstract: DS1270AB DS1270Y A6829 DS1270Y-AB
    Text: DS1270Y/AB PRELIMINARY DS1270Y/AB 16M Nonvolatile SRAM FEATURES PIN ASSIGNMENT •5 years minimum data retention in the absence of external power NC 1 36 VCC • Data is automatically protected during power loss A20 2 35 A19 • Unlimited write cycles A18


    Original     		PDF DS1270Y/AB DS1270Y/AB DS1270 DS1270AB DS1270Y A6829 DS1270Y-AB

    DS1270W

    Abstract: DS1270 DS1270W-100 DS1270W-100IND E99151 DS12
    Text: 19-5614; Rev 11/10 DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


    Original     		PDF DS1270W 100ns MDT36 DS1270W DS1270 DS1270W-100 DS1270W-100IND E99151 DS12

    DS1270W

    Abstract: DS1270 DS1270W-100 DS1270W-100IND DS1270W-150 DS9034PC DS9034PCI ds1270w-100#
    Text: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1270W 100ns 150ns DS9034PC DS9034PCI DS1270W DS1270 DS1270W-100 DS1270W-100IND DS1270W-150 DS9034PCI ds1270w-100#

    ST L1117

    Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
    Text: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS


    Original     		PDF A011905 ST L1117 ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905

    DS1270W

    Abstract: DS2070W-100 DS2070W
    Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


    Original     		PDF DS2070W 256-ball DS2070W DS1270W DS2070W-100

    F5 sot223

    Abstract: DS18S20Z DS1270Y-70IND TSOC 6 socket ds1480 DS1321 DS1667S-010 DS2404S-001 DS2404S001 dallas ds1213c
    Text: DS1233A 3.3V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to


    Original     		PDF DS1233A 350ms OT-223 DS9092K DS9092R DS9093A DS9092RG F5 sot223 DS18S20Z DS1270Y-70IND TSOC 6 socket ds1480 DS1321 DS1667S-010 DS2404S-001 DS2404S001 dallas ds1213c

    DS1425L-F5

    Abstract: F5 sot223 TSOC 6 socket DS-1100 DS1267SN-100 DS1314DS DS275 8-Pin SOIC 150-mil DS1667S-010 DS1640 DS1238S5
    Text: DS1233 5V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to


    Original     		PDF DS1233 350ms OT-223 DS9092K DS9092R DS9093A DS9092RG DS1425L-F5 F5 sot223 TSOC 6 socket DS-1100 DS1267SN-100 DS1314DS DS275 8-Pin SOIC 150-mil DS1667S-010 DS1640 DS1238S5

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB DALLAS DS1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inimum data retention in the absence of external power NC É A20 • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles


    OCR Scan     		PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin DS1270Y/AB 36-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years m inimum data retention in the absence of external power NC É A20 • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles


    OCR Scan     		PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin DS1270Y/AB 36-PIN

    cycles

    Abstract: No abstract text available
    Text: DS1270Y/AB DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years minimum data retention in the absence of external power NC I 1 1 A2Û 11 • Data is automatically protected during power loss 2 A 18 11 3 • Unlimited write cycles


    OCR Scan     		PDF DS1270Y/AB DS1270Y) DS1270AB) DS1270Y/AB DS1270 216-bit. cycles

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR DS1270Y/AB 16M Nonvolatile SRAM FEATURES PIN ASSIG NM ENT • 5 years minimum data retention in the absence of external power Vcc A19 • Data is automatically protected during power loss NC • Unlimited write cycles


    OCR Scan     		PDF DS1270Y/AB DS1270Y) DS1270AB) DQ7100: DS1270Y/AB 36-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years minimum data retention in the absence of external power NC I 1 A20 1 • Datais automatically protected during power loss A18 I • Unlimited write cycles


    OCR Scan     		PDF DS1270Y/AB DS1270Y) DS1270Y/AB 36-pin 35-PIN

    DS1270

    Abstract: DS1270AB DS1270AB-70 DS1270Y DS1270Y-70
    Text: DS1270Y/AB DALLAS DS1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inim um data retention in the absence of external power NC 1 1 36 | A20 1 2 35 | A18 1 3 34 | NC A16 1 4 33 | A15 A14 1 5 32 | A17 A12 1 6 31 1


    OCR Scan     		PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin DS1270Y/AB 36-PIN DS1270 DS1270AB DS1270AB-70 DS1270Y DS1270Y-70