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    CI EEPROM 2816

    Abstract: eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		DS1220Y DS1220Y 24-PIN CI EEPROM 2816 eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y-100 DS1220Y-120 PDF

    DS1220

    Abstract: DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		DS1220Y DS1220Y DS1220 DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		DS1220Y DS1220Y 24-PIN PDF

    JESD22-B102

    Abstract: JESD22-B100 JESD22B-102 DS1220
    Text: 02/11/2004 RELIABILITY REPORT FOR USE THIS PART FOR DS1220Y DS1220 Rev D2 AD Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


    Original     		DS1220Y DS1220 60C/90% JESD22-B102 JESD22-B100 JESD22B-102 PDF

    2716 eeprom

    Abstract: DS1220Y-200 DALLAS DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-200IND
    Text: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		DS1220Y 24-pin 2716 eeprom DS1220Y-200 DALLAS DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-200IND PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		DS1220Y 24-pin 720-mil A0-A10 100ns 120ns PDF

    2716 eeprom

    Abstract: eeprom 2816 DS1220Y DS1220Y-100 DS1220Y-100IND
    Text: 19-5579; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power


    Original     		DS1220Y 24-pin 2716 eeprom eeprom 2816 DS1220Y DS1220Y-100 DS1220Y-100IND PDF

    DS1225Y

    Abstract: DS1218 DS1210 DS1220Y burn-in
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 5/7/98 Subject: PRODUCT CHANGE NOTICE - E80701 Description: Burn-in Elimination - DS1218 Description of Change:


    Original     		E80701 DS1218 DS1218. DS1220Y DS1225Y DS1210. DS1210 DS1218 DS1225Y DS1220Y burn-in PDF

    dallas ds1213

    Abstract: ds1235 microcontroller water level controller circuit diagram DS1213 DALLAS DS1213 equivalent DS1213D DALLAS SEMICONDUCTOR Ds1235 dallas ds1213c lithium* protection FOR DS1235 ds1235y-150
    Text: Application Note 202 NV SRAM Frequently Asked Questions www.maxim-ic.com What is an NV SRAM? A nonvolatile static random access memory NV SRAM is a type of computer memory that maintains its memory data when power is shut off. NV SRAMs store digital information like system configuration or


    Original     		DS1220AD DS1225AD DS1220Y DS1225Y. 125ms. 125ms dallas ds1213 ds1235 microcontroller water level controller circuit diagram DS1213 DALLAS DS1213 equivalent DS1213D DALLAS SEMICONDUCTOR Ds1235 dallas ds1213c lithium* protection FOR DS1235 ds1235y-150 PDF

    DS1669-100

    Abstract: TQFP 100 pin Socket 4 pin dip switch DS2401 PACKAGE 16 pin DIP socket DS1804 NV 2 pin dip switch ds1232(ind) data sheet ds1642-150 DS1620S
    Text: ORDERING INFORMATION DEVICE DS0621–SDK DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC 14–Pin DIP


    Original     		DS0621 DS1000 DS1000 DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1669-100 TQFP 100 pin Socket 4 pin dip switch DS2401 PACKAGE 16 pin DIP socket DS1804 NV 2 pin dip switch ds1232(ind) data sheet ds1642-150 DS1620S PDF

    DS1425L-F5

    Abstract: rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S
    Text: ORDERING INFORMATION DEVICE DS0621–SDK DS0630 DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC


    Original     		DS0621 DS0630 DS1000 DS1000 DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1425L-F5 rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S PDF

    1220Y

    Abstract: DS1220
    Text: DS1220Y DALLAS SEM ICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		DS1220Y DS1220Y 24-PIN A0-A10 1220Y DS1220 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS DS1220Y 16K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc A7 1 A6 | A5 | s A4 1 24 1 VCC • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		DS1220Y 24-pin 100ns, 120ns, 150ns, 200ns Vcc11. DS1220Y 24-PIN PDF

    2816 eeprom

    Abstract: eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716
    Text: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of externa! power 1 24 Aö 2 23 A5 3 22 A4 4 21 A3 5 20 A2 6 19 A1 7 18 A0 8 17 • Read and write access times as fast as 100 ns


    OCR Scan     		DS1220Y 24-pin DS1220Y 2816 eeprom eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 24 g V cc A6 | 2 23 A8 | 3 22 | A9 A4 | 4 21 | WE • Unlimited write cycles A3 1 5 20 § ÔÊ • Low-power CMOS


    OCR Scan     		DS1220Y 24-pin 2bl4130 PDF

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SR AM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 | 1 • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		24-pin DS1220Y AS1220XTjR-jSS^ DS1220Y PDF

    CI EEPROM 2816

    Abstract: CI EPROM 2816 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom
    Text: D S 1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or EEPROM A7 1 1 24 1 V cc A6


    OCR Scan     		DS1220Y 24-pin 100ns, 120ns, 150ns, 200ns 24-PIN 720MIL) CI EEPROM 2816 CI EPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom PDF

    2816 eeprom

    Abstract: CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
    Text: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K N onvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 < • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		DS1220Y 24-pin 2bl413D DS1220Y 24-PIN 2bl4130 2816 eeprom CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 PDF

    2816 eeprom

    Abstract: eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100
    Text: !• DALLAS n r mmimmmmm DS1220Y 16k Nonvolatile SRAM t com PIN ASSIGNMENT FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    OCR Scan     		24-pin DS1220Y DS1220 DSI220Y 720-MIL 24-PIN 2816 eeprom eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220Y-100 PDF

    2816 eeprom

    Abstract: eeprom 2816 CI EEPROM 2816 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150
    Text: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		DS1220Y 24-pin A0-A10 DS1220Y 24-PIN 2816 eeprom eeprom 2816 CI EEPROM 2816 2816 eprom RAM 2816 DS1220 DS1220Y-100 DS1220Y-120 DS1220Y-150 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS SEMICONDUCTOR D S1220Y 16K Nonvolatile SRA M FEATURES PIN ASSIGNMENT • Data retention in the absence of V q c A7 § 1 24 1 Vcc 23 1 AB AS I s 22 1 Ad A4 § 4 21 1 WE A3 1 5 20 1 ÖI • Data is automatically protected during power loss A6 I


    OCR Scan     		DS1220Y S1220Y 24-pin 100ns, 120ns, 150ns, 200ns temperatu20Y DS1220Y PDF

    dallas 1220y

    Abstract: 1220Y
    Text: D S 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		1220Y DS1220Y 24-pin dallas 1220y 1220Y PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y D A L L A S s e m ic o n d u c to r D S1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc A7 1 V cc A8 CO CM 24 1 A5 1 3 22 1 A9 A4 | 4 21 1 w i A3 1 20 1 ÖE A6 • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		DS1220Y S1220Y 24-pin 100ns, 120ns, 150ns, 200ns 15ured DS1220Y 24-PIN PDF

    CI EEPROM 2816

    Abstract: 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122
    Text: DS1220AB/AD DALLAS SEMICONDUCTOR CORP 50E D • DALLAS SEMICONDUCTOR Ebl413D 000Mb34 b I DS1220AB/AD 16K Nonvolatile SRAM 7^ FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		DS1220AB/AD Ebl413D 000Mb34 24-pin 100ns, 120ns, 150ns, 200ns DS1220Y CI EEPROM 2816 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122 PDF