transistor 1800MHz
Abstract: r.f. amplifier 30mhz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
2500MHz
2500MHz)
transistor 1800MHz
r.f. amplifier 30mhz
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Untitled
Abstract: No abstract text available
Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology Single Circuit for 865MHz To
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RFG1M09180
700MHZ
1000MHZ
1000MHZ
RF400-2
865MHz
960MHz
47dBm
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PDF
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Untitled
Abstract: No abstract text available
Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology
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RFG1M09090
700MHZ
1000MHZ
RFG1M09090
RF400-2
865MHz
960MHz
44dBm
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PDF
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RFG1M20180
Abstract: ATC800B820JT
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS120418
ATC800B820JT
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PDF
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RFHA1006
Abstract: 0906-4K LQG11A47NJ00
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1006
225MHz
1215MHz,
RFHA1006
1215MHz
DS120418
0906-4K
LQG11A47NJ00
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EC 401 TRANSISTOR
Abstract: Gan hemt transistor RFMD transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
EC 401 TRANSISTOR
Gan hemt transistor RFMD
transistor 1800MHz
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"class AB Linear" 50mhz
Abstract: RFHA1000 Transistor J116
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
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RFHA1000
50MHz
1000MHz,
RFHA1000
1000MHz
DS120418
"class AB Linear" 50mhz
Transistor J116
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PDF
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ATC800B680JT
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology
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RFG1M20090
RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
DS120418
ATC800B680JT
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology
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RFHA3944
RF360-2
800MHz
2500MHz
-40dBc
DS120418
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology
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RFHA3942
RF360-2
800MHz
2500MHz
-40dBc
DS120418
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PDF
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Untitled
Abstract: No abstract text available
Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology
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Original
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RFG1M09090
700MHZ
1000MHZ
1000MHZ
RF400-2
865MHz
960MHz
44dBm
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PDF
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RFG1M09180
Abstract: ATC100B150JT
Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology
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Original
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RFG1M09180
700MHZ
1000MHZ
RFG1M09180
RF400-2
865MHz
960MHz
47dBm
ATC100B150JT
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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Original
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RFHA1006
225MHz
1215MHz,
1215MHz
DS120418
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
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Original
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RFHA1000
50MHz
1000MHz,
1000MHz
DS120418
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PDF
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Untitled
Abstract: No abstract text available
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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RFG1M20180
RF400-2
-36dBc
-55dBc
DS120418
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PDF
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