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    Pentair Equipment Protection - Hoffman HSDS1108GSK

    HYSHED REPL. GASKET SCREW 11X8
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    DigiKey HSDS1108GSK Bulk 1
    • 1 $224.5
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    Pentair Equipment Protection - Hoffman ZHSDS1108SS

    REPL. HYSHED SCREW COVER 11X8
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    DigiKey ZHSDS1108SS Bulk 1
    • 1 $739.74
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    Pentair Equipment Protection - Hoffman HSDS110804SS

    HYSHED SCREW COVER 11X8X4
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    DigiKey HSDS110804SS Bulk 1
    • 1 $1157.63
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    nVent Hoffman HSDS110804SS

    Enclosure, Wall Mount, Stainless Steel; Enclosure Type:Wall Mount; Enclosure Material:Stainless Steel; External Height - Metric:300.5Mm; External Width - Metric:207Mm; External Depth - Metric:102Mm; Ip Rating:Ip69K; Body Color:- Rohs Compliant: Yes |Nvent Hoffman HSDS110804SS
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    Newark HSDS110804SS Bulk 59 1
    • 1 $1388.47
    • 10 $1328.1
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    RS HSDS110804SS Bulk 1
    • 1 $1402.35
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    nVent Hoffman HSDS1108GSK

    Replacement Gasket, Silicone, 279Mm; Gasket/Seal Type:Replacement Gasket; Gasket/Seal Material:Silicone; Gasket/Seal Length:279Mm; Product Range:Hyshed Hsdh Series Rohs Compliant: Yes |Nvent Hoffman HSDS1108GSK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark HSDS1108GSK Bulk 1 1
    • 1 $224.4
    • 10 $205.7
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    RS HSDS1108GSK Bulk 1 1
    • 1 $233.38
    • 10 $200.7
    • 100 $200.7
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    DS1108 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DS1108 International Semiconductor SURFACE MOUNT DIODE DIP ARRAYS Scan PDF

    DS1108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF1156 BROADBAND LOW POWER SP5T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1156 RF1 Features       RF2 450MHz to 2.69GHz Operation Very Low Insertion Loss: Cell Band 0.40dB PCS Band 0.55dB High Isolation: Cell Band 30dB PCS Band 22dB Compatible With Low Voltage


    Original     		PDF RF1156 16-pin, 450MHz 69GHz 106dBm 108dBm RF1156 DS110802

    Untitled

    Abstract: No abstract text available
    Text: NBB-402 NBB-402Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features      Reliable, Low-Cost HBT Design 15.0dB Gain, +15.8dBm P1dB at2GHz High P1dB of


    Original     		PDF NBB-402Cascadable NBB-402 NBB-402 amplifie10 DS110825

    RF1602

    Abstract: No abstract text available
    Text: RF1602 RF1602Broadband SPDT Switch BROADBAND SPDT SWITCH Package: QFN, 2mmx2mmx0.55mm RF1602 Features    Low Frequency to 3.5GHz Operation Low Insertion Loss, Typ. 0.3dB at 1GHz RF1 Very High Isolation, Typ. 42dB at 1GHz RF2  High Linearity, IIP2 Typ. 129dBm


    Original     		PDF RF1602Broadband RF1602 129dBm RF1602 DS110805 100pF

    R4003

    Abstract: hdr1x6 RF5A 7915m
    Text: RF1156 BROADBAND LOW POWER SP5T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1156 RF1 Features       RF2 450MHz to 2.69GHz Operation Very Low Insertion Loss: Cell Band 0.40dB PCS Band 0.55dB High Isolation: Cell Band 30dB PCS Band 22dB Compatible With Low Voltage


    Original     		PDF RF1156 16-pin, 450MHz 69GHz 106dBm 108dBm RF1156 DS110802 R4003 hdr1x6 RF5A 7915m

    sta5063

    Abstract: 2.4 ghZ rf transistor
    Text: SZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER     GND VBIAS2 GND VB2B VB2B RFOUT RFOUT VDET 21 GND 20 GND VC1A VC1A  IEEE802.11a/n and IEEE802.16e Applications HyperLAN WiFi Systems Commercial and Consumer Systems Portable Battery-Powered


    Original     		PDF SZM-5066Z 40-Pin, 25dBm IEEE802 11a/n SZM-5066Z DS110819 SZM5066Z sta5063 2.4 ghZ rf transistor

    rfvc1823

    Abstract: No abstract text available
    Text: RFVC1823 RFVC1823Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24-Pin, 4mmx4mm Features      6.1GHz to 6.75GHz Operation -101 dBc/Hz Phase Noise at 100kHz Offset +8.0 dBm POUT No External Resonator or


    Original     		PDF RFVC1823Low RFVC1823 24-Pin, 75GHz 100kHz RFVC1823 75GHz. DS110829

    RF3228

    Abstract: No abstract text available
    Text: RF3228 QUAD-BAND GMSK POLAR EDGE TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2         Applications     Battery Powered 3G


    Original     		PDF RF3228 00mmx6 00mmx1 RF3228 J-STD-033. RF3228TR13 RF3228TR7 DS110819

    103dBc

    Abstract: No abstract text available
    Text: RFVC1822 RFVC1822Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       5.0GHz to 5.5GHz Operation 103dBc/Hz Phase Noise at 100kHz offset +9.0dBm POUT No external resonator or


    Original     		PDF RFVC1822Low RFVC1822 103dBc/Hz 100kHz RFVC1822 DS110829 103dBc

    RFVC1825

    Abstract: No abstract text available
    Text: RFVC1825 RFVC1825Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       7.8GHz to 8.7GHz Operation -107dBc/Hz Phase Noise at 100KHz offset +11.0 dBm POUT No external resonator or


    Original     		PDF RFVC1825Low RFVC1825 -107dBc/Hz 100KHz RFVC1825 DS110829

    Untitled

    Abstract: No abstract text available
    Text: RF3025 RF3025SPDT, High Isolation, Single Control, Absorptive Switch SPDT, HIGH ISOLATION, SINGLE CONTROL, ABSORPTIVE SWITCH Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The RF3025 is a high isolation single-pole double-throw SPDT absorptive


    Original     		PDF RF3025SPDT, RF3025 16-Pin, RF3025 DS110829

    Untitled

    Abstract: No abstract text available
    Text: RFSA4013 RFSA4013 Temperature Compensating Attenuator TEMPERATURE COMPENSATING ATTENUATOR Features 12 GND VDD GND GND NC 2 11 NC RFIN 3 10 RFOUT 9 NC +85dBm IIP2 Typical ATTEN NC 4 High 1dB Compression Point >+30dBm  Low Supply Current 1mA Typical  5V Power Supply


    Original     		PDF RFSA4013 RFSA4013 16-Pin, 50MHz 4000MHz 55dBm 85dBm 30dBm RFSA4023 DS110817

    RF7242

    Abstract: RFMD PA LTE RFMD LTE Band 40
    Text: RF7242 3V W-CDMA BAND 2 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features           AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.5dBm Linear Output Power (+27.5dBm HSDPA


    Original     		PDF RF7242 10-Pin, 203mm 330mm 025mm DS110803 RF7242 RFMD PA LTE RFMD LTE Band 40

    QFN "200 pin" PACKAGE

    Abstract: RFVC1803PCK-410 RFVC1803 DS110829
    Text: RFVC1803 RFVC1803 Wideband MMIC VCO with Buffer Amplifier, 6GHz to 9GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 6GHZ TO 9GHZ Package: QFN, 4mmx4mmx1.1mm Features  Wideband Performance  POUT =+3.5dBm Typical  External Resonator Not Required  Single Bias Supply: +5V at 53mA


    Original     		PDF RFVC1803 RFVC1803 -97dBc/Hz 100kHz DS110829 QFN "200 pin" PACKAGE RFVC1803PCK-410 DS110829

    Untitled

    Abstract: No abstract text available
    Text: RFVC1829 RFVC1829Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       6.8GHz to 7.4GHz Operation -103dBc/Hz Phase Noise at 100KHz offset +12.0dBm POUT No external resonator or


    Original     		PDF RFVC1829Low RFVC1829 -103dBc/Hz 100KHz RFVC1829 DS110829

    lna c band

    Abstract: No abstract text available
    Text: RF5516 3.3V 5GHz 802.11a/n FRONT-END MODULE GND LNA EN SW TX SW RX Package Style: QFN, 16-pin, 3.0mmx3.0mmx0.5mm 16 15 14 13 Features    1 HB RX Single Supply Voltage 3.0V to 4.8V Integrated 5GHz Amplifier, LNA, and SPT2T TX/RX Switch POUT =15.5dBm, 11a, OFDM


    Original     		PDF RF5516 11a/n 16-pin, IEEE802 RF5516 DS110809 lna c band

    RF7248

    Abstract: RFMD LTE Band 40 RFMD PA LTE
    Text: RF7248 3V W-CDMA BAND 8 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features           AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.5dBm Linear Output Power (+27.5dBm HSDPA


    Original     		PDF RF7248 10-Pin, 203mm 330mm 025mm DS110803 RF7248 RFMD LTE Band 40 RFMD PA LTE

    Untitled

    Abstract: No abstract text available
    Text: RF3229 QUAD-BAND GMSK TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2        Applications    Battery Powered 3G Handsets GSM850/EGSM900/DCS/


    Original     		PDF RF3229 00mmx6 00mmx1 GSM850 EGSM900 DCS1800 PCS1900 J-STD-033. RF3229TR13 RF3229TR7

    Untitled

    Abstract: No abstract text available
    Text: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package: MPGA, Bowtie, 3 x 3, Ceramic Features      Pin 1 Indicator Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation 50 I/O Matched for High


    Original     		PDF NBB-312 12GHz NBB-312 2002/95/EC DS110825

    Untitled

    Abstract: No abstract text available
    Text: RFDA2026 RFDA2026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 1400MHz to 2700MHz, 6-BIT 0.5dB LSB CONTROL Package Style: MCM 28-Pin, 6.0mmx6.0mm Features  Frequency Range 1400MHz to 2700MHz  6-Bit Digital Step Attenuator


    Original     		PDF RFDA2026Digital RFDA2026 1400MHz 2700MHz, 28-Pin, 2700MHz 5/25dBm RFDA2026

    rfmd mmic

    Abstract: SGA-3286Z SGA3286ZSR
    Text: SGA3286Z SGA3286ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage


    Original     		PDF SGA3286ZDC 5000MHz, SGA3286Z OT-86 SGA3286Z 850MHz DS110812 rfmd mmic SGA-3286Z SGA3286ZSR

    Untitled

    Abstract: No abstract text available
    Text: RFRX1701 RFRX1701 17.7GHz to 26.5GHz GaAs MMIC 17.7GHz TO 26.5GHz GaAs MMIC IQ DOWN-CONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm Features   RF Frequency=17.7GHz to 26.5GHz LO Frequency=6.85GHz to 15.25GHz  IF Frequency=DC to 4GHz  Conversion Gain=13dB


    Original     		PDF RFRX1701 RFRX1701 32-Pin, 85GHz 25GHz DS110824 RFRX17

    Untitled

    Abstract: No abstract text available
    Text: SPF5344Z SPF5344Z 0.8GHz to 4GHz, GaAs pHEMT 2Stage Low Noise MMIC Amplifier 0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in


    Original     		PDF SPF5344Z SPF5344Z 39dBm DS110805 5344Z

    crow mh 10 PIR

    Abstract: BOSCH cross reference intellisense is310 PS-1523 RK815DT crow mh-10 7939WG k940 2707A-L Sentrol 6155
    Text: Sensors Competitive Cross Reference Charts Magnetic Contacts Commercial Recess Mount Surface Mount Honeywell Honeywell ADEMCO IntelliSense Aleph GRI Sentrol/GE 7939WG 7939, 7939W, PR-20439 MPS20 7939-2 7939-2 - 7940 7940 943WG PAL-T 940 950 Tane DC2451, DC2451WG


    Original     		PDF 7939WG PR-20439 MPS20 943WG DC2451, DC2451WG 1085T, 1285T 1087T SM35C crow mh 10 PIR BOSCH cross reference intellisense is310 PS-1523 RK815DT crow mh-10 7939WG k940 2707A-L Sentrol 6155

    ds130 diode

    Abstract: ds130 diode 1N4148 SMD diode array SMD DIODE 1N4148 PACKAGE dual diode 1N4148 SMD DS-130 DS1185 smd diode arrays DS1103
    Text: DS130 thru DS1185 Equivalent To: MMAD130 thru MMAD1185 I n te r n a t/ onal S e m ic o n d u c t o r , I n c . SURFACE MOUNT DIODE DIP ARRAYS ISI Part # Motorola Part # Circuit Package DS130 M M AD130 1 S M B D 2-7 D S 1 103 M M A D 11 03 2 S M B D 2-7 D S 1 104


    OCR Scan     		PDF DS130 DS1185 MMAD130 MMAD1185 450-y\ DS1103 DS1104 DS1105 ds130 diode diode 1N4148 SMD diode array SMD DIODE 1N4148 PACKAGE dual diode 1N4148 SMD DS-130 smd diode arrays