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    DAL DS1005-060

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    DS100506 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


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    PDF IXXN110N65C4H1 20-60kHz IC110 OT-227B, E153432 IF110 110N65C4 1-30-13-A

    IXXN110N65C4H1

    Abstract: E8 55A DIODE ixxn110n65c z 683
    Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings


    Original
    PDF 20-60kHz IXXN110N65C4H1 IC110 OT-227B, E153432 IF110 50/60Hz 100N65C4H1 IXXN110N65C4H1 E8 55A DIODE ixxn110n65c z 683

    RF1450

    Abstract: RF1450PCBA-410
    Text: RF1450 BROADBAND HIGH POWER SP4T SWITCH „ „ „ „ High Linearity: IMD <-115dBm Excellent Harmonic Performance: -80dBc at 1GHz GaAs pHEMT Process Applications „ „ „ „ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications GSM/GPRS/EDGE Switch


    Original
    PDF RF1450 -115dBm -80dBc 16-pin, 203mm 330mm 025mm DS100506 RF1450 RF1450PCBA-410

    Untitled

    Abstract: No abstract text available
    Text: RF1450 BROADBAND HIGH POWER SP4T SWITCH ̈ ̈ ̈ ̈ Applications ̈ ̈ ̈ ̈ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications GSM/GPRS/EDGE Switch Applications Cellular Infrastructure Applications GND RF1 pHEMT Switch GND 1 Low Frequency - 2.5GHz


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    PDF RF1450 -115dBm -80dBc 203mm 330mm 025mm DS100506