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    IXTH2N170D2

    Abstract: DS100418B
    Text: IXTT2N170D2 IXTH2N170D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1700V 2A 6.5Ω Ω N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1700 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1700


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    IXTT2N170D2 IXTH2N170D2 O-268 O-247 O-247) O-268 100ms 100ms 2N170D2 IXTH2N170D2 DS100418B PDF

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    Abstract: No abstract text available
    Text: Depletion Mode MOSFETs VDSX ID on IXTT2N170D2 IXTH2N170D2 RDS(on) = > ≤ 1700V 2A 6.5Ω Ω N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1700 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1700


    Original
    IXTT2N170D2 IXTH2N170D2 O-268 O-247 O-247) 100ms 2N170D2 PDF