Untitled
Abstract: No abstract text available
Text: RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5.00mmx5.00mmx1.00mm 10 DCS RFOUT DCS RFIN 1 BAND SEL 2 Features Linear EDGE and GSM Operation High Gain for use in Systems with Low RF Driver Power
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RF3189
GSM/EDGE/GSM850/EGSM900
00mmx5
00mmx1
GSM850/900
RF3189TR13
EIA-481.
DS100412
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N120B3
IC110
183ns
O-247
062in.
40N120B3
A-C91)
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Untitled
Abstract: No abstract text available
Text: IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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Original
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PDF
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IXYH40N120B3
IC110
183ns
O-247
40N120B3
A-C91)
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RF3183
Abstract: 300khz filter EGSM900 Power Amplifier Module for GSM
Text: RF3183 QUAD-BAND/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5mmx5mmx1mm DCS RFIN 1 10 DCS RFOUT BAND SEL 2 Features TX EN 3 Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53% Integrated Power Control VBATT 4
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Original
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PDF
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RF3183
QUAD-BAND/GSM850/EGSM900
GSM850/900
GSM850/EGSM90document.
RF3183TR13
EIA-481.
DS100412
RF3183
300khz filter
EGSM900
Power Amplifier Module for GSM
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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Original
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PDF
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IXYH40N120B3
IC110
183ns
O-247
062in.
40N120B3
A-C91)
|
Untitled
Abstract: No abstract text available
Text: RF3183 QUAD-BAND/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5mmx5mmx1mm DCS RFIN 1 10 DCS RFOUT BAND SEL 2 Features TX EN 3 Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53% Auto VBATT Tracking Circuit avoids Switching Transients at Low
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Original
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PDF
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RF3183
QUAD-BAND/GSM850/EGSM900
GSM850/900
RF3183TR13
EIA-481.
DS100412
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N120B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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Original
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PDF
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IC110
IXYH40N120B3
183ns
O-247
40N120B3
A-C91)
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RF3189
Abstract: EGSM900 300khz filter EGSM900DCS
Text: RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5.00mmx5.00mmx1.00mm 10 DCS RFOUT DCS RFIN 1 BAND SEL 2 Features High Gain for use in Systems with Low RF Driver Power Typical GMSK Efficiency
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Original
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PDF
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RF3189
GSM/EDGE/GSM850/EGSM900
00mmx5
00mmx1
GSM850/900
RF3189TR13
EIA-481.
DS100412
RF3189
EGSM900
300khz filter
EGSM900DCS
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