national semiconductor databook
Abstract: 54ACT08 DIODE DATABOOK 54AC08 54ACTQ08 AC08 E20A J14A W14B SMD DATABOOK
Text: 54AC08 Quad 2-Input AND Gate n Standard Microcircuit Drawing SMD 5962-87615 n 54AC08 now qualified to 300Krad RHA designation, refer to the SMD for more information n For Military 54ACT08 device, see 54ACTQ08 General Description The ’AC08 contains four, 2-input AND gates.
|
Original
|
PDF
|
54AC08
54AC08
300Krad
54ACT08
54ACTQ08
DS100260
national semiconductor databook
DIODE DATABOOK
54ACTQ08
AC08
E20A
J14A
W14B
SMD DATABOOK
|
54ACT08
Abstract: 54AC08 54ACTQ08 AC08 E20A
Text: 54AC08 Quad 2-Input AND Gate General Description Features The ’AC08 contains four, 2-input AND gates. n n n n ICC reduced by 50% Outputs source/sink 24 mA Standard Microcircuit Drawing SMD 5962-87615 For Military 54ACT08 device, see 54ACTQ08 Logic Symbols
|
Original
|
PDF
|
54AC08
54ACT08
54ACTQ08
DS100260-1
DS100260-3
DS100260-2
DS100260
54AC08
Condition959
54ACTQ08
AC08
E20A
|
IXTH16N20D2
Abstract: 16n20 16N20D2 ixtt16n20d2
Text: Advance Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
IXTH16N20D2
IXTT16N20D2
O-247
O-247)
O-268
100ms
Impedance10
IXTH16N20D2
16n20
16N20D2
ixtt16n20d2
|
Untitled
Abstract: No abstract text available
Text: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > 200V 16A 80m N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous
|
Original
|
PDF
|
IXTT16N20D2
IXTH16N20D2
O-268
062in.
O-247)
O-247
100ms
|
IXTT16N20D2
Abstract: 16n20 IXTH16N20D2 16N20D2 40810
Text: Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
IXTH16N20D2
IXTT16N20D2
O-247
O-268
O-247)
O-247
100ms
Impedance10
IXTT16N20D2
16n20
16N20D2
40810
|
Untitled
Abstract: No abstract text available
Text: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > 200V 16A 80m N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous
|
Original
|
PDF
|
IXTT16N20D2
IXTH16N20D2
O-268
062in.
O-247)
O-247
100ms
|