IXGP24N60C4D1
Abstract: IC110
Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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PDF
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IXGP24N60C4D1
IC110
O-220
IF110
338B2
IXGP24N60C4D1
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54AC00
Abstract: 54ACT00 AC00 act00
Text: 54AC00 • 54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Outputs source/sink 24 mA n ’ACT00 has TTL-compatible inputs n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699
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PDF
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54AC00
54ACT00
ACT00
ACT00:
DS100257-3
DS100257-1
DS100257-2
DS100257
54AC00
54ACT00
AC00
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IXGP24N60C4D1
Abstract: IF110 IXGP24N60C ups 017
Text: Advance Technical Information High-Gain IGBT w/ Diode IXGP24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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PDF
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IXGP24N60C4D1
IC110
O-220
IF110
338B2
IXGP24N60C4D1
IF110
IXGP24N60C
ups 017
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54ACT00
Abstract: 54AC00 54ACT 74AC AC00
Text: 54AC00/54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699 n 54AC00 now qualified to 300Krad RHA designation,
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Original
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PDF
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54AC00/54ACT00
ACT00
ACT00:
54AC00
300Krad
DS100257
54ACT00
54ACT
74AC
AC00
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54AC00
Abstract: 54ACT00 AC00
Text: 54AC00 • 54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Outputs source/sink 24 mA n ’ACT00 has TTL-compatible inputs n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699
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Original
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PDF
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54AC00
54ACT00
ACT00
ACT00:
DS100257-3
DS100257-1
DS100257-2
DS100257
54AC00
54ACT00
AC00
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGP24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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PDF
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IC110
IXGP24N60C4D1
O-220
IF110
11ective
338B2
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