IXTQ69N30PM
Abstract: IXTQ69N30 ixtq69n30p
Text: Advance Technical Information IXTQ69N30PM PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 300V = 25A Ω ≤ 49mΩ OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ
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IXTQ69N30PM
100ms
69N30P
0-16-09-A
IXTQ69N30PM
IXTQ69N30
ixtq69n30p
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PVX006
Abstract: PVX006A0X3-SRZ PVX006A0X PDT006
Text: Preliminary Data Sheet January 19, 2012 6A Analog Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.6Vdc to 5.5Vdc output; 6A Output Current Features RoHS Compliant Applications • Distributed power architectures • Intermediate bus voltage applications
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2002/95/EC
IPC-9592
3Vdc-14
1-888-LINEAGE
1-972-244-WATT
DS10-016
PVX006A0X
PVX006
PVX006A0X3-SRZ
PDT006
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PVX006A0X
Abstract: No abstract text available
Text: Preliminary Data Sheet October 17, 2011 6A Analog Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.6Vdc to 5.5Vdc output; 6A Output Current Features RoHS Compliant Applications Compliant to RoHS EU Directive 2002/95/EC Z versions
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2002/95/EC
3Vdc-14
1-888-LINEAGE
1-972-244-WATT
DS10-016
PVX006A0X
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embedded dram timing
Abstract: No abstract text available
Text: ASIC DATA BOOK TC300 Series Embedded DRAM 2003 TC300 Series Embedded DRAM Published in December, 2003 Document ID: BDE0067A C Copyright 2003 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products.
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TC300
BDE0067A
DS08020801E
DS08011001E
DS0C020801E
DS0C011001E
DS08040801E
DS08021001E
DS10020801E
embedded dram timing
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MIL-STD-833B
Abstract: 54ABT273 54ABT273E-QML 54ABT273J-QML 54ABT273W-QML ABT273 ABT373 J20A W20A
Text: 54ABT273 Octal D-Type Flip-Flop General Description The ’ABT273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The common buffered Clock CP and Master Reset (MR) inputs load and reset (clear) all flip-flops simultaneously.
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54ABT273
ABT273
MIL-STD-833B
54ABT273
54ABT273E-QML
54ABT273J-QML
54ABT273W-QML
ABT373
J20A
W20A
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abt245
Abstract: 54ABT245 54ABT245E-QML 54ABT245J-QML 54ABT245W-QML E20A J20A W20A
Text: 54ABT245 Octal Bidirectional Transceiver with TRI-STATE Outputs General Description The ’ABT245 contains eight non-inverting bidirectional buffers with TRI-STATE outputs and is intended for bus-oriented applications. Current sinking capability is 48 mA on both the
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54ABT245
ABT245
54ABT245
54ABT245E-QML
54ABT245J-QML
54ABT245W-QML
E20A
J20A
W20A
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02N120
Abstract: IXTY02N120P 02N120P IXTP02N120P power mosfet 600v
Text: Advance Technical Information IXTP02N120P IXTY02N120P PolarTM Power MOSFET VDSS ID25 RDS on = 1200V = 0.2A ≤ 75Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTP02N120P
IXTY02N120P
O-220
02N120P
02N120
IXTY02N120P
IXTP02N120P
power mosfet 600v
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IXTH75N10L2
Abstract: IXTT75N10L2 IXTH75N10L
Text: Advance Technical Information IXTH75N10L2 IXTT75N10L2 LinearL2TM Power MOSFET w/extended FBSOA VDSS ID25 = 100V = 75A ≤ 21mΩ Ω RDS on D O D N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated RGi G O ww TO-247 (IXTH) O S Symbol Test Conditions
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IXTH75N10L2
IXTT75N10L2
O-247
100ms
75N10L2
IXTH75N10L2
IXTT75N10L2
IXTH75N10L
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Untitled
Abstract: No abstract text available
Text: 54ABT273 54ABT273 Octal D-Type Flip-Flop Literature Number: SNOS043 54ABT273 Octal D-Type Flip-Flop General Description The ’ABT273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The common buffered Clock CP and Master Reset (MR) inputs load and reset
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54ABT273
54ABT273
SNOS043
ABT273
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS
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IXFA6N120P
IXFP6N120P
IXFH6N120P
O-263
O-220AB
6N120P
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTK600N04T2 IXTX600N04T2 = = 40V 600A Ω 1.5mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS
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IXTK600N04T2
IXTX600N04T2
O-264
600N04T2
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IXTK600N04T2
Abstract: IXTX600N04T2 PLUS247
Text: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET IXTK600N04T2 IXTX600N04T2 VDSS ID25 = = 40V 600A Ω 1.5mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS
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IXTK600N04T2
IXTX600N04T2
O-264
600N04T2
IXTK600N04T2
IXTX600N04T2
PLUS247
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54ABT646
Abstract: 54ABT646E-QML 54ABT646J-QML 54ABT646W-QML E28A J24A W24C
Text: 54ABT646 Octal Transceivers and Registers with TRI-STATE Outputs General Description Features The ’ABT646 consists of bus transceiver circuits with TRI-STATE, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the input
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54ABT646
ABT646
det959
54ABT646
54ABT646E-QML
54ABT646J-QML
54ABT646W-QML
E28A
J24A
W24C
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54ABT374
Abstract: E20A J20A W20A DS100207-1 ABT374
Text: 54ABT374 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description The ’ABT374 is an octal D-type flip-flop featuring separate D-type inputs for each flip-flop and TRI-STATE outputs for bus-oriented applications. A buffered Clock CP and Output
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54ABT374
ABT374
54ABT374
E20A
J20A
W20A
DS100207-1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA VDSS ID25 IXTH75N10L2 IXTT75N10L2 = 100V = 75A ≤ 21mΩ Ω RDS on D O D N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated RGi G O ww TO-247 (IXTH) O S Symbol Test Conditions
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IXTH75N10L2
IXTT75N10L2
O-247
100ms
75N10L2
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IXTH60N20L2 Linear Power MOSFET
Abstract: ixth60n20 60n20 IXTT60N20L2 IXTH60N20L2
Text: Advance Technical Information IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 200V = 60A ≤ 45mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab Symbol Test Conditions Maximum Ratings
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IXTT60N20L2
IXTQ60N20L2
IXTH60N20L2
O-268
O-247
IXTT60N20L2
100ms
IXTH60N20L2 Linear Power MOSFET
ixth60n20
60n20
IXTH60N20L2
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet August 31, 2011 6A Analog Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.6Vdc to 5.5Vdc output; 6A Output Current Features RoHS Compliant Applications • Distributed power architectures • Intermediate bus voltage applications
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2002/95/EC
3Vdc-14
1-888-LINEAGE
1-972-244-WATT
DS10-016
PVX006A0X
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PDF
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IXFH86N30T
Abstract: No abstract text available
Text: IXFH86N30T IXFT86N30T TrenchTM HiperFETTM Power MOSFET VDSS ID25 = 300V = 86A 46m RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V
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IXFH86N30T
IXFT86N30T
O-247
86N30T
W-N32)
IXFH86N30T
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FPD3000SOT89
Abstract: No abstract text available
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD3000SOT89CE
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89CE
25mx1500m
FPD3000SOT89CE:
FPD3000SOT89CECE
EB3000SOT89-BC
FPD3000SOT89
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Untitled
Abstract: No abstract text available
Text: Semiconductor 54ABT373 Octal Transparent Latch with TRI-STATE Outputs G uaranteed m ultiple output sw itching specifications General Description The ’ABT373 consists o f eight latches with TR I-STATE o ut puts fo r bus organized system applications. The flip-flops a p
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54ABT373
ABT373
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54ABT245
Abstract: 54ABT245E-QML 54ABT245J-QML 54ABT245W-QML ABT245 E20A J20A W20A
Text: Ju ly 1998 54ABT245 Octal Bidirectional Transceiver with TRI-STATE Outputs General Description The ’ABT245 contains eight non-inverting bidirectional buff ers with TRI-STATE outputs and is intended fo r bus-oriented applications. Current sinking capability is_48 m A on both the
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54ABT245
ABT245
54ABT245E-QML
54ABT245J-QML
54ABT245W-QML
E20A
J20A
W20A
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Untitled
Abstract: No abstract text available
Text: ß Semiconductor 54ABT374 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description • G u a ra n te e d m u ltip le o u tp u t s w itc h in g s p e c ific a tio n s T h e ’A B T 3 7 4 is a n o c ta l D -ty p e flip -flo p fe a tu rin g s e p a ra te
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54ABT374
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Untitled
Abstract: No abstract text available
Text: & Semiconductor 54ABT245 July 1998 National 54ABT245 G uaranteed output skew General Description The ’ABT245 contains eight non-inverting bidirectional butt ers with TRI-STATE outputs and is intended to r bus-oriented applications. Current sinking capability is 48 m A on both the
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54ABT245
54ABT245
ABT245
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Untitled
Abstract: No abstract text available
Text: J u ly 1 9 9 8 Semiconductor 54ABT16373 16-Bit Transparent Latch with TRI-STATE Outputs General Description Features T h e A B T 1 6 3 7 3 c o n ta in s s ix te e n n o n -in v e rtin g la tc h e s w ith • S e p a ra te c o n tro l lo g ic fo r e a c h byte
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54ABT16373
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