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    IXTN550N055T2

    Abstract: DS100173A IXYS IXTN550N055T2
    Text: Preliminary Technical Information IXTN550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original     		IXTN550N055T2 OT-227 E153432 550N055T2 IXTN550N055T2 DS100173A IXYS IXTN550N055T2 PDF

    IXTN550N055T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN550N055T2 = = 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original     		IXTN550N055T2 OT-227 E153432 550N055T2 IXTN550N055T2 PDF