GSM900
Abstract: QFN20 RF3863 RF3867 RF3867PCK-410
Text: RF3867 DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Dual-Channel Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply 700MHz to 3800MHz Operation Small QFN20 5mmx5mm Package
|
Original
|
PDF
|
RF3867
20-Pin,
700MHz
3800MHz
QFN20
GSM900
RF3867
RF3863
DS091119
RF3867PCK-410
|
FPD1500SOT89CESR
Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
|
Original
|
PDF
|
FPD1500SOT89
FPD1500SOT8
FPD1500SOT89
25mx1500m
42dBm
FPD1500SOT89E:
FPD1500SOT89E
FPD1500SOT89CE
EB1500SOT89CE-BC
FPD1500SOT89CESR
FPD1500SOT89E
MIL-HDBK-263
|
marking code macom
Abstract: macom marking MAcom device marking marking macom ETC1-1T Macom marking code HEMT marking P CGA-3318
Text: CGA-3318Z CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
|
Original
|
PDF
|
CGA-3318Z
CGA-3318Z
CGA3318
CGA3318Z
CGA3318ZSB
CGA3318ZSQ
CGA3318ZSR
marking code macom
macom marking
MAcom device marking
marking macom
ETC1-1T
Macom marking code
HEMT marking P
CGA-3318
|
FPD3000SOT89E
Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
|
Original
|
PDF
|
FPD3000SOT89
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89
25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE
EB3000SOT89-BC
FPD3000SOT89E
FPD3000SOT89CE
micro transistor 1203
EB3000SOT89-BC
|
transistor bc 647
Abstract: No abstract text available
Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
|
Original
|
PDF
|
FPD750SOT89
25dBm
39dBm
FPD750SOT89
mx1500Î
FPD750SOT89E:
FPD750SOT89E
FPD750SOT89CE
EB750SOT89CE-BC
transistor bc 647
|
CGA-6681Z
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed
|
Original
|
PDF
|
CGA-6618Z
1000MHz
CGA-6618Z
CGA-6681Z
DS091119
CGA6618ZSB
|
Untitled
Abstract: No abstract text available
Text: RF3867 DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Dual-Channel Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply 700MHz to 3800MHz Operation Small QFN20 5mmx5mm Package ̈ ̈
|
Original
|
PDF
|
RF3867
700MHz
3800MHz
QFN20
20-Pin,
GSM900
RF3867
DS091119
|
0402CS
Abstract: FPD750SOT343 transistor 24 GHz
Text: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm
|
Original
|
PDF
|
FPD750SOT343
FPD750SOT34
OT343
FPD750SOT343
mx750
1850MHz)
20dBm
37dBm
2002/95/EC)
11kaged
0402CS
transistor 24 GHz
|