pseudomorphic HEMT
Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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FPD7612
FPD7612General
FPD7612
25mx200m
12GHz
18GHz
22-A114.
MIL-STD-1686
MIL-HDBK-263.
pseudomorphic HEMT
MIL-HDBK-263
AlGaAs resistivity
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7474 truth table
Abstract: 65X65 MIL-HDBK-263 MICRO TX1 capacitor 1.8ghz 100pF 0402
Text: FMS2028 FMS2028 SP6T GAAS MULTI-BAND GSM ANTENNA SWITCH Package Style: Bare Die Product Description Features The FMS2028 is a low loss, high isolation, broadband single-pole six-throw Gallium Arsenide antenna switch. The die is fabricated using the FL05 0.5 m switch process from RFMD that offers leading edge performance optimized for switch applications.
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FMS2028
FMS2028
FMS2028-000
DS090519
FMS2028-000SQ
FMS2028-000S3
7474 truth table
65X65
MIL-HDBK-263
MICRO TX1
capacitor 1.8ghz 100pF 0402
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FPD200 DIE
Abstract: No abstract text available
Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,
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FPD200
FPD200General
FPD200
mx200Î
19dBm
12GHz
18GHz
FPD200-000
DS090519
FPD200 DIE
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FPD200
Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,
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FPD200
FPD200General
FPD200
25mx200m
19dBm
12GHz
18GHz
FPD200-000
DS090519
FPD200 DIE
MIL-HDBK-263
bjt 137
FPD200-000
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