PC44
Abstract: VQ44 XAPP361 XC9500XV XC9572XV
Text: XC9572XV High-performance CPLD R DS052 v2.5 August 21, 2003 5 Features • • • • • • • • 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin PLCC (34 user I/O pins) - 44-pin VQFP (34 user I/O pins) - 48-pin CSP (38 user I/O pins)
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XC9572XV
DS052
44-pin
48-pin
100-pin
72-user
54-input
220oC.
PC44
VQ44
XAPP361
XC9500XV
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marking code f4 3 pin
Abstract: No abstract text available
Text: XC9572XV High-performance CPLD R DS052 v2.6 April 15, 2005 5 Product Specification Features • • • • • • • • PTOTAL = PINT + PIO = ICCINT x VCCINT + PIO 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin PLCC (34 user I/O pins)
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XC9572XV
DS052
XC9500XV
220oC.
marking code f4 3 pin
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Untitled
Abstract: No abstract text available
Text: XC9572XV High-performance CPLD R DS052 v2.3 May 31, 2002 5 Features • • • • • • • • 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin PLCC (34 user I/O pins) - 44-pin VQFP (34 user I/O pins) - 48-pin CSP (38 user I/O pins)
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XC9572XV
DS052
XC9500XV
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PC44
Abstract: VQ44 XC9500XV XC9572XV
Text: XC9572XV High-performance CPLD R DS052 v2.2 August 27, 2001 5 Advance Product Specification Features Power Estimation • • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. To help reduce power dissipation, each macrocell
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XC9572XV
DS052
XC9500XV
PC44
VQ44
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Untitled
Abstract: No abstract text available
Text: XC9572XV High-performance CPLD R DS052 v2.4 June 18, 2003 5 Features • • • • • • • • 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin PLCC (34 user I/O pins) - 44-pin VQFP (34 user I/O pins) - 48-pin CSP (38 user I/O pins)
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XC9572XV
DS052
44-pin
48-pin
100-pin
72-user
54-input
220oC.
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Untitled
Abstract: No abstract text available
Text: XC9572XV High-performance CPLD R DS052 v2.0 January 29, 2001 5 Advance Product Specification Features Power Estimation • • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. To help reduce power dissipation, each macrocell
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XC9572XV
DS052
44-pin
48-pin
100-pin
72-user
54-input
TQ100
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DS052
Abstract: No abstract text available
Text: XC9572XV High-performance CPLD R DS052 v2.7 January 16, 2006 5 Features • • • • • • • • 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin VQFP (34 user I/O pins) - 100-pin TQFP (72-user I/O pins) Optimized for high-performance 2.5V systems
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XC9572XV
DS052
XC9500XV
220oC.
XCN05020.
DS052
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Untitled
Abstract: No abstract text available
Text: CP3UB17 www.ti.com SNOSCX6A – APRIL 2005 – REVISED DECEMBER 2013 CP3UB17 Reprogrammable Connectivity Processor with USB Interface Check for Samples: CP3UB17 1 GENERAL DESCRIPTION The CP3UB17 connectivity processor combines a powerful RISC core with on-chip SRAM and Flash
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CP3UB17
CP3UB17
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FPT-44P-M08
Abstract: MBM30LV0064 BGA-52P-M01
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20878-5E
MBM30LV0064
MBM30LV0064
FPT-44P-M08
BGA-52P-M01
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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DS05-20904-2E
MBM29DL32TF/BF-70
MBM29DL32TF/BF
MBM29DL32TF/BF
F0305
FPT-48P-M19
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
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MBM29F040
Abstract: FPT-32P-M24 MBM29F040C R095
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-4E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29F040C-55/-70/-90 • FEATURES • • • • • • • • • • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands
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DS05-20842-4E
MBM29F040C-55/-70/-90
32-pin
MBM29F040
FPT-32P-M24
MBM29F040C
R095
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FPT-48P-M19
Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20841-4E
8/512K
9F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
48-pin
44-pin
FPT-48P-M19
FPT-48P-M20
mbm28f800
MBM28F800TA
77ff
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Untitled
Abstract: No abstract text available
Text: ® INNOVATION and EXCELLENCE Single Output ULQ Models Low-Profile, Quarter-Brick 5-25 Amp DC/DC Converters Features • Standard quarter-brick package/pinout in through-hole or SMT version ■ Low cost; Low profile, 0.35" 8.9mm ■ 24V and 48V nominal inputs
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3/5/12V
2250Vdc
UL/EN/IEC60950
per56
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MBM29BS64LF
Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed
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DS05-20916-1E
MBM29BS/BT64LF-18/25
MBM29BS/BT64LF
60-ball
MBM29BS/
BT64LF-25
MBM29BT64LF-18
MBM29BS64LF-18
F0403
MBM29BS64LF
MBM29BS64LF-18
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
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BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
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DS05-20846-6E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
MBM29LV160T/B
16M-bit,
48-pin
48-ball
F0306
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
MBM29LV160B-12PBT
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50REF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20885-2E
MBM30LV0128
MBM30LV0128
50REF
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
F0201
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to
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DS05-20906-1E
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
F0306
FPT-48P-M19
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FPT-32P-M24
Abstract: MBM29F002BC MBM29F002TC
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20868-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements
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DS05-20868-3E
9F002TC-55/-70/-90/MBM29F002BC-55/-70/-90
32-pin
FPT-32P-M24
MBM29F002BC
MBM29F002TC
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
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DS05-20843-3E
MBM29F017A-70/-90/-12
48-pin
40-pin
F48029S-2C-2
FPT-48P-M20)
F48030S-2C-2
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29F400TC
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20851-4E FLASH MEMORY B lB 4M 512K X 8/256K x 16 BIT MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70A90
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DS05-20851-4E
8/256K
29F400TC-55/-70/-90/MBM29F400BC-55/-70A90
48-pin
44-pin
F48030S-2C-2
9F400TC-55/-70/-90/MBM29F40QBC-55/-70/-90
FPT-44P-M16)
F44023S-3C-3
29F400TC
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20858-4E FLASH MEMORY CMOS 8M 1M x 8 BIT M B M29LV008TA-70/-90/-12/M BM29LV008B A-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20858-4E
M29LV008TA-70/-90/-12/M
BM29LV008B
40-pin
FPT-40P-M07)
F40008S-1C-1
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