zener diode 46a
Abstract: DSBT2-S-DC12V DSBT2-S-DC24V DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550 solid state 220 volt stabilizer circuit dsbt2-s-dc5v AC DC DIGITAL ammeter diagram
Text: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts
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E43149
LR26550
zener diode 46a
DSBT2-S-DC12V
DSBT2-S-DC24V
DS2E-M-DC24V
DSBT2-M-2D-DC12V
DSBT2-M-2D-DC24V
LR26550
solid state 220 volt stabilizer circuit
dsbt2-s-dc5v
AC DC DIGITAL ammeter diagram
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three relay stabilizer circuit diagram
Abstract: TUBE Light Choke Coil Winding four relay stabilizer circuit diagram high frequency arc welding schematic RELAY PCB MERCURY RELAY 5V design a sequential timer to switch on and off at least 3 relays in a particular sequence using tim DS2E-M-DC12V ds1e-m DS2E-ML-DC12V DS2E-ML-DC24V
Text: DS HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY 9.9 .390 35.24 1.387 UL File No.: E43149 CSA File No.: LR26550 9.8 .386 9.9 .390 20 .787 9.8 .386 15 .590 DS4E DS-RELAYS 9.9 .390 9.8 .386 DS2E mm inch DS1E • High sensitivity: 200 mW pick-up power
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E43149
LR26550
three relay stabilizer circuit diagram
TUBE Light Choke Coil Winding
four relay stabilizer circuit diagram
high frequency arc welding schematic
RELAY PCB MERCURY RELAY 5V
design a sequential timer to switch on and off at least 3 relays in a particular sequence using tim
DS2E-M-DC12V
ds1e-m
DS2E-ML-DC12V
DS2E-ML-DC24V
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MATSUA DSP2a 48v
Abstract: Matsushita Relay Technical Information, nr scr 8a 200v RP RELAY DSP1-DC12V LR26550 dsp2a relay 12v tunnel diode circuit diagram electronic choke for tube light Matsushita Miniature Relay s2 12v
Text: DSP DSPRELAYS MINIATURE POWER RELAY IN DS RELAY SERIES UL File No.: E43028 CSA File No.: LR26550 11.0 .433 20.2 .795 10.5 .413 DSP1a DSP1 mm inch DSP2a • Power types added to DS relay series • High switching capacity: 1a: 8 A 250 V AC 1a1b, 2a: 5 A 250 V AC
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E43028
LR26550
MATSUA DSP2a 48v
Matsushita Relay Technical Information, nr
scr 8a 200v
RP RELAY
DSP1-DC12V
LR26550
dsp2a relay 12v
tunnel diode
circuit diagram electronic choke for tube light
Matsushita Miniature Relay s2 12v
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75N03L
Abstract: 75n03
Text: S DP /B 75N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 7 @ V G S = 10V
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75N03L
O-220
O-263
75N03L
75n03
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85N03
Abstract: 85N03L
Text: S DP /B 85N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 5 @ V G S = 10V
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85N03L
O-220
O-263
85N03
85N03L
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FDP2552
Abstract: FDB2552 25E5 tube marking m062 25E5
Text: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2552
FDP2552
O-220AB
O-263AB
FDP2552
25E5 tube
marking m062
25E5
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FDB2552
Abstract: 2E-2 marking m062
Text: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2552
FDP2552
O-220AB
O-263AB
FDP2552
2E-2
marking m062
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25E5 tube
Abstract: FDB2552 TC2-25 FDP2552 marking m062
Text: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2552
FDP2552
O-220AB
O-263AB
25E5 tube
TC2-25
FDP2552
marking m062
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Untitled
Abstract: No abstract text available
Text: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2552
FDP2552
O-220AB
O-263AB
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FDB2552
Abstract: FDP2552 marking m062
Text: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2552
FDP2552
O-220AB
O-263AB
FDP2552
marking m062
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TC225
Abstract: FDB2552-F085 marking m062
Text: FDB2552_F085 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDB2552
O-263AB
TC225
FDB2552-F085
marking m062
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP1203AGMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS SO-8 Compatible with Heatsink 30V R DS ON Low On-resistance G 12mΩ ID RoHS-compliant, halogen-free 37A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with
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AP1203AGMT-HF-3
AP0503
1203AGMT
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FDP047AN08A0
Abstract: alternator diode 50a
Text: FDP047AN08A0 N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mΩ Features Applications • r DS ON = 4.0mΩ (Typ.), V GS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge
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FDP047AN08A0
O-220AB
FDP047AN08A0
alternator diode 50a
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FDB045AN08A0
Abstract: FFDB045AN08A0T
Text: FDB045AN08A0 N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mΩ Features Applications • r DS ON = 3.9mΩ (Typ.), V GS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge
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FDB045AN08A0
O-263AB
FDB045AN08A0
FFDB045AN08A0T
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HX8353D
Abstract: HX8353
Text: DATA SHEET DOC No. HX8353-D-DS HX8353-D 132RGB x 162 dots, 262K color, with Internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 Apr, 2010 HX8353-D 132RGB x 162 dot, 262K Color, with Internal GRAM, TFT Mobile Single Chip Driver List of Contents
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HX8353-D-DS
HX8353-D
132RGB
HX8353D
300um
250um
227Apr,
HX8353
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FDP047AN
Abstract: No abstract text available
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 m Ω Features Applications • R DS ON = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 92 nC (Typ.), VGS = 10V
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
FDH047AN08A0
O-220AB
O-262AB
O-247
FDP047AN
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HX8357-D01
Abstract: MIPI dbi data rate hx8357
Text: DATA SHEET DOC No. HX8357-D00/D01-DS HX8357-D00/D01 320RGB x 480 dot, 16M color, with internal GRAM, TFT Mobile Single Chip Driver Temporary Version 00 April, 2012 HX8357-D00/D01 320RGB x 480 dot, 16M color, with internal GRAM, TFT Mobile Single Chip Driver
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HX8357-D00/D01-DS
HX8357-D00/D01
320RGB
253April,
HX8357-D0x0
254April,
HX8357-D01
MIPI dbi data rate
hx8357
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FDB10AN06A0
Abstract: FDP10AN06A0
Text: FDB10AN06A0 / FDP10AN06A0 N-Channel PowerTrench MOSFET 60V, 75A, 10.5mΩ Features Applications • r DS ON = 9.5mΩ (Typ.), V GS = 10V, ID = 75A • Motor / Body Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDB10AN06A0
FDP10AN06A0
O-220AB
O-263AB
FDP10AN06A0
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Untitled
Abstract: No abstract text available
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996 ZVP3306F _ _ FEATURES * 60 V olt V DS * R DS on = 1 4 f l PARTMARKING DETAIL - ML COMPLEMENTARY TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage
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ZVP3306F
ZVN3306F
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Quad Framing and Line Interface Component for E1 / T1 / J1 QuadFALC PEB 22554 Version 1.1 Preliminary Data Sheet 09.98 DS 1 PEB 22554 Revision History: Current Version: 09.98 Previous Version: None Page in previous Version
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ETS300
EASY22554:
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Untitled
Abstract: No abstract text available
Text: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
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b-bios
Abstract: No abstract text available
Text: PD 9.1477C International ICR Rectifier IRF3415 PRELIMINARY HEXFET^ Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS= 150V R DS on = Description Id = 0.042Í2
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1477C
IRF3415
O-220
b-bios
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T0247AC
Abstract: No abstract text available
Text: kitemational PD 9.1409 SRectifier IRFP048N PRELIMINARY HEXFET Power M OSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = 0.016Î2 lD = 62A Description Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
61350BadHomburgTel:
T0247AC
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RF1010
Abstract: diode body marking A 4
Text: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V
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IRF3415
O-220
RF1010
diode body marking A 4
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