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    DS 205 Search Results

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    DS 205 Price and Stock

    Essentra Components CBRLDS205A

    REVERSE MOUNT SUPPORT,LOCKING,.1
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    DigiKey CBRLDS205A Bag 2,000 1
    • 1 $0.37
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    • 100 $0.2117
    • 1000 $0.18638
    • 10000 $0.18638
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    RS CBRLDS205A Bulk 9 Weeks 1,000
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    • 1000 $0.267
    • 10000 $0.245
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    Apex Tool Group LLC DS205

    INLINE FILTER FOR DS700
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    DigiKey DS205 Bulk
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    iComTech Inc EDS-205A-M-SC

    5-PORT UNMANAGED ETH SW W/M-SC
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    DigiKey EDS-205A-M-SC Box
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    iComTech Inc EDS-205A-M-SC-T

    Unmanaged switch with 4 10/100Ba
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    DigiKey EDS-205A-M-SC-T
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    IDEC Corporation DS2-05-25-045-JV

    957501110 LIGHT GRIDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS2-05-25-045-JV Bulk 1
    • 1 $1986.57
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    Mouser Electronics DS2-05-25-045-JV
    • 1 $1536.7
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    Master Electronics DS2-05-25-045-JV
    • 1 $1567.23
    • 10 $1485.82
    • 100 $1485.82
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    Sager DS2-05-25-045-JV
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    DS 205 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS205 Apex Tool Group Accessories, Soldering, Desoldering, Rework Products, INLINE FILTER FOR DS700 Original PDF
    DS2050W Maxim Integrated Products 3.3V Single-Piece 4Mb Nonvolatile SRAM Original PDF
    DS2050W-100 Maxim Integrated Products 3.3V Single-Piece 4Mb Nonvolatile SRAM Original PDF
    DS2050W-100# Maxim Integrated Products 3.3V Single-Piece 4Mb Nonvolatile SRAM Original PDF
    DS2058 Dallas Semiconductor Li-Ion Battery Monitor Scan PDF

    DS 205 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MIL-W-85

    Abstract: WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide
    Text: • RECTANGULAR WAVEGUIDE SECTION CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 DS-111 Directional Couplers . .


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    DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 MIL-W-85 WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide PDF

    DS3319

    Abstract: SM-43T pl-7 DS30 DS40 PC05 PC30 PL-11 PL-13 PC2213H
    Text: 84 SAMWHA ELECTRONICS POT CORES DS30~DS40 PC05~PC30 Ordering Code System PL-9 Material Core Type DS 4020 Core Size SAMWHA ELECTRONICS DS CORES DS3019D Part No. Type D2 D1 Dimensions in mm Core Set Parameters DS DS A 30.00 ±0.50 31.20 ±0.30 33.20 ±0.50 33.20 ±0.50


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    DS3019D DS3119W DS3314W DS3319D 80min. 20min. PL-11 PL-13 PL-15 DS3319 SM-43T pl-7 DS30 DS40 PC05 PC30 PL-11 PL-13 PC2213H PDF

    025n10n

    Abstract: IPB025N10N3 IPB025N10N3 G IEC61249-2-21 JESD22
    Text: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability


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    IPB025N10N3 IEC61249-2-21 PG-TO263-7 025N10N 025n10n IPB025N10N3 G IEC61249-2-21 JESD22 PDF

    JESD22

    Abstract: No abstract text available
    Text: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature


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    BSC205N10LS 205N10LS JESD22 PDF

    025N10N

    Abstract: IPB025N10N3 IPB025N10N3 G JESD22
    Text: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability


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    IPB025N10N3 PG-TO263-7 025N10N 025N10N IPB025N10N3 G JESD22 PDF

    027N10N

    Abstract: IPB027N10N3 IEC61249-2-21 JESD22
    Text: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


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    IPB027N10N3 IEC61249-2-21 PG-TO263-3 027N10N 027N10N IEC61249-2-21 JESD22 PDF

    027N10N

    Abstract: IPB027N10N3 JESD22
    Text: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


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    IPB027N10N3 PG-TO263-3 027N10N 027N10N JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature


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    BSC205N10LS 205N10LS PDF

    030N10N

    Abstract: IPP030N10N3 JESD22 PG-TO220-3 IPP030N10N3 G DSV80
    Text: IPP030N10N3 G OptiMOS 3 Power-Transistor IPI030N10N3 G Product Summary Features V DS • N-channel, normal level 100 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mΩ 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


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    IPP030N10N3 IPI030N10N3 PG-TO220-3 PG-TO262-3 030N10N 10gerous 030N10N JESD22 PG-TO220-3 IPP030N10N3 G DSV80 PDF

    110-16F

    Abstract: 110-12F 110-18F IXYS DSA 110-16F IXYS DSA 110-18F DO-205 110-08F DO205 ixys dsi DO30
    Text: Rectifier Diodes DS 110 DSI110 IFRMS = 250 A Avalanche Diodes DSA110 DSAI110 IFAVM = 160 A VRRM = 800 - 1800 V VRSM VBRmin ① DO-205 AC VRRM Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 110-08F DS 110-12F DSI 110-08F DSI 110-12F 1300 1700


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    DSI110 DSA110 DSAI110 DO-205 110-08F 110-12F 110-16F 110-16F 110-12F 110-18F IXYS DSA 110-16F IXYS DSA 110-18F 110-08F DO205 ixys dsi DO30 PDF

    IEC61249-2-21

    Abstract: JESD22 PG-TDSON-8
    Text: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature


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    BSC205N10LS IEC61249-2-21 205N10LS IEC61249-2-21 JESD22 PG-TDSON-8 PDF

    IPA030N10N3 G

    Abstract: JESD22 75V10 DD-50 030n10n
    Text: IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS • N-channel, normal level • Excellent gate charge x R DS on product (FOM) 100 V R DS(on),max 3 mΩ ID 79 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


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    IPA030N10N3 PG-TO220-FP 030N10N IPA030N10N3 G JESD22 75V10 DD-50 030n10n PDF

    IXYS DSA 110-16F

    Abstract: 110-16F IXYS DSA 110-18F 110-18F DO-205 IXYS DSA D-68623 DO30 110-08F 110-12F
    Text: DS 110 DSA 110 Rectifier Diodes Avalanche Diodes V V 900 1300 1300 1700 1900 V - VRRM = 800 - 1800 V IF RMS = 250 A IF(AV)M = 160 A DO-205 AC V(BR)min ① V R R M V RSM DSI 110 DSAI 110 800 1200 Anode Cathode on on DS DS 1300 1200 1750 1600 1950 1800 stud


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    DO-205 110-08F 110-12F 110-16F 110-18F IXYS DSA 110-16F 110-16F IXYS DSA 110-18F 110-18F IXYS DSA D-68623 DO30 110-08F 110-12F PDF

    M8450A

    Abstract: diode AR S1 77 M845
    Text: S T M8450A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -4A R DS (ON) ( m W )


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    M8450A M8450A diode AR S1 77 M845 PDF

    DS4020

    Abstract: DS3319 DS4028 DS3324 33-2050 DS3319D PL-11 PL-13 DS4025 DS4025D
    Text: SAMWHA ELECTRONICS DS CORES DS3019D Part No. Type D2 D1 Dimensions in mm Core Set Parameters DS DS A 30.00 ±0.50 31.20 ±0.30 33.20 ±0.50 33.20 ±0.50 B 9.40 ±0.15 9.45 ±0.15 7.10 ±0.15 9.40 ±0.15 C 20.30 ±0.30 20.30 ±0.30 23.70 ±0.30 23.70 ±0.30


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    DS3019D DS3119W DS3314W DS3319D 80min. 20min. PL-11 PL-13 PL-15 DS4020 DS3319 DS4028 DS3324 33-2050 DS3319D PL-11 PL-13 DS4025 DS4025D PDF

    OM4204SS

    Abstract: No abstract text available
    Text: OM4204SS/RS/DS OM4229SS/RS/DS OM4228SS/RS/DS 100 AMP SCHOTTKY CENTER-TAP IN HERMETIC ISOLATED SIP PACKAGE 100 Amp, 45, 60 and 100 Volt Power Schottky Center-Tap Module FEATURES • • • • • • • • • Two Isolated Schottky Rectifiers In A Hermetic SIP Package


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    OM4204SS/RS/DS OM4229SS/RS/DS OM4228SS/RS/DS MIL-S-19500, OM4204SS OM4204SS PDF

    JESD22

    Abstract: DD-50 BSC100N10NSF GS8030
    Text: BSC100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


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    BSC100N10NSF 100N10NS JESD22 DD-50 GS8030 PDF

    100N10NS

    Abstract: No abstract text available
    Text: BSC100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


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    BSC100N10NSF 100N10NS 100N10NS PDF

    sii861

    Abstract: 19F590 SiI859 SiI-DS-0026-D 6Af amplifier
    Text: SiI859 / SiI863 Data Sheet Silicon Image, Inc. Revision 1.2 May, 2002 SiI-DS-0026-D Silicon Image, Inc. SiI859 / SiI863 SiI-DS-0026-D Table of Contents Table of Contents . 2


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    SiI859 SiI863 SiI-DS-0026-D SiI863 SiI-DS-0026-C sii861 19F590 6Af amplifier PDF

    100N10NS

    Abstract: BSC100N10NSF IEC61249-2-21 JESD22
    Text: BSC100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 10 mΩ • Optimized for dc-dc conversion ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


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    BSC100N10NSF IEC61249-2-21 100N10NS 100N10NS IEC61249-2-21 JESD22 PDF

    YMF724F-V

    Abstract: YMF727 MPU401 Yamaha XG YAMAHA xg ymf YMF724F YMF724 yamaha ds1 xg midi synthesizer sound blaster
    Text: YMF724F DS-1 OVERVIEW YMF724F DS-1 is a high performance audio controller for the PCI Bus. DS-1 consists of two separated functional blocks. One is the PCI Audio block and the other is the Legacy Audio block. PCI Audio block allows Software Driver to handle maximum of 73 concurrent audio streams with the Bus Master DMA engine.


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    YMF724F 64-voice YMF724F-V YMF727 MPU401 Yamaha XG YAMAHA xg ymf YMF724F YMF724 yamaha ds1 xg midi synthesizer sound blaster PDF

    IXYS DSA 110-16F

    Abstract: ds110
    Text: □IXYS DS 110 DSA 110 Rectifier Diodes Avalanche Diodes 800 -1800 V 250 A 160 A RRM F RMS F(AV)M v RSM V V(BR)min V RRM V 900 1300 - 1300 1700 1900 -X- Anode \ V on stud ^ DSI 110 DSA1110 DO-205 AC Cathode •j" on stud DS DSA - 800 1200 DS 110-08F DS110-12F


    OCR Scan
    DSA1110 DO-205 110-08F DS110-12F DS1110-08F DS1110-12F DSA110-12F 110-16F 110-18F DSA1110-12F IXYS DSA 110-16F ds110 PDF

    Untitled

    Abstract: No abstract text available
    Text: OM4204SS/RS/DS OM4229SS/RS/DS OM4228SS/RS/DS 100 AMP SCHOTTKY CENTER-TAP IN HERMETIC ISOLATED SIP PACKAGE 100 Amp, 45, 60 and 100 Volt Power Schottky Center-Tap Module FEATURES Two Isolated Schottky Rectifiers In A Hermetic SIP Package Very Low Forward Voltage


    OCR Scan
    OM4204SS/RS/DS OM4229SS/RS/DS OM4228SS/RS/DS MIL-S-19500, OM4204XX 150mA OM4228XX OM4229XX PDF

    Untitled

    Abstract: No abstract text available
    Text: OM42Û4SS/RS/DS OM4229SS/RS/DS OM4228SS/RS/DS 100 AMP SCHOTTKY CENTER-TAP IN HERMETIC ISOLATED SIP PACKAGE 100 Amp, 45, 60 and 100 Volt Power Schottky Center-Tap Module FEATURES Two Isolated Schottky Rectifiers In A Hermetic SIP Package Very Low Forward Voltage


    OCR Scan
    OM4229SS/RS/DS OM4228SS/RS/DS MIL-S-19500, OM4204XX 150mA OM4228XX OM4229XX 300/vs. PDF