IPB027N10N3 Search Results
IPB027N10N3 Price and Stock
Infineon Technologies AG IPB027N10N3GATMA1MOSFET N-CH 100V 120A D2PAK |
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IPB027N10N3GATMA1 | Reel | 9,000 | 1,000 |
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IPB027N10N3GATMA1 | Reel | 4 Weeks | 108 |
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IPB027N10N3GATMA1 | 1,786 |
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IPB027N10N3GATMA1 | 18,000 | 1,000 |
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IPB027N10N3GATMA1 | 18,000 | 18 Weeks | 1,000 |
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IPB027N10N3GATMA1 | Cut Tape | 4,351 | 1 |
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IPB027N10N3GATMA1 | 4,203 |
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IPB027N10N3GATMA1 | 51,585 | 1 |
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IPB027N10N3GATMA1 | 1 |
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IPB027N10N3GATMA1 | 18,000 |
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IPB027N10N3GATMA1 | 19 Weeks | 1,000 |
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IPB027N10N3GATMA1 | 10,000 | 1 |
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IPB027N10N3GATMA1 | 46,600 |
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Infineon Technologies AG IPB027N10N3 GMOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB027N10N3 G | 7,334 |
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IPB027N10N3 G | 11,000 | 1,000 |
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IPB027N10N3 G | 2,000 |
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Infineon Technologies AG IPB027N10N3GTransistor, OptiMOS 3 Power MOSFET, N-channel, normal level, 100V, 120A, TO263 | Infineon IPB027N10N3G |
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IPB027N10N3G | Bulk | 2 Weeks | 1 |
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IPB027N10N3G | 39 |
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IPB027N10N3G | 1,600 |
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IPB027N10N3G | 79,000 |
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Infineon Technologies AG IPB027N10N3GE8187ATMA1Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001044582) |
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IPB027N10N3GE8187ATMA1 | 26 Weeks | 1 |
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IPB027N10N3 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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IPB027N10N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 120.0 A; | Original | |||
IPB027N10N3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 120A TO263-3 | Original |
IPB027N10N3 Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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IPB027N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à | |
027N10N
Abstract: IPB027N10N3 IEC61249-2-21 JESD22
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IPB027N10N3 IEC61249-2-21 PG-TO263-3 027N10N 027N10N IEC61249-2-21 JESD22 | |
IPB027N10N3
Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
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IPB027N10N3 7865AE5 marking 1D 55B5 Q451 EB5 MARKING marking G9 | |
027N10N
Abstract: IPB027N10N3 JESD22
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IPB027N10N3 PG-TO263-3 027N10N 027N10N JESD22 | |
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LM5066 SNVS655G LM5066 12-Bit | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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5000w audio circuit design
Abstract: AN2160 B380-13-F GRM188R71A154KA01D tvs 5000w 5.0smdj Infineon Power Management Selection Guide 2011
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LM5066EVK LM5066 AN-2160 5000w audio circuit design AN2160 B380-13-F GRM188R71A154KA01D tvs 5000w 5.0smdj Infineon Power Management Selection Guide 2011 | |
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LM5066 SNVS655G LM5066 12-Bit | |
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SNVA487A AN-2160 LM5066 LM5066EVK | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
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LM5066 SNVS655G LM5066 12-Bit | |
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LM5066 SNVS655G LM5066 12-Bit | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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LM5066 SNVS655G LM5066 12-Bit |