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    DRIVE MOSFET Search Results

    DRIVE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK421G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    DRIVE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ca3103

    Abstract: 2n2222 -331 Cd4093 SiHF
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2


    Original     		AN-937 ca3103 2n2222 -331 Cd4093 SiHF PDF

    02M45

    Abstract: No abstract text available
    Text: Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB  Structure Silicon N-channel MOSFET  Dimensions Unit : mm EMT3F Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. (3) (1) (2)


    Original     		2SK3019EB 2SK3019EB Pw10s, R1120A 02M45 PDF

    HEXFET Power MOSFET designer manual

    Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
    Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2


    Original     		AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent PDF

    UC3724N

    Abstract: 2kw mosfet 2kw transformer SOIC-16 UC1724 UC1724J UC1725 UC2724 UC2724DW UC2724N
    Text: UC1724 UC2724 UC3724 Isolated Drive Transmitter FEATURES DESCRIPTION • 500mA Output Drive, Source or Sink The UC1724 family of Isolated Drive Transmitters, along with the UC1725 Isolated Drivers, provide a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices


    Original     		UC1724 UC2724 UC3724 500mA UC1724 UC1725 600kHz UC3724N 2kw mosfet 2kw transformer SOIC-16 UC1724J UC1725 UC2724 UC2724DW UC2724N PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1724 UC2724 UC3724 Isolated Drive Transmitter FEATURES DESCRIPTION • 500mA Output Drive, Source or Sink The UC1724 family of Isolated Drive Transmitters, along with the UC1725 Isolated Drivers, provide a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices


    Original     		UC1724 UC2724 UC3724 500mA 600kHz UC1725 PDF

    IGBT Drive Using MOSFET Gate Drivers by

    Abstract: UC1724 U-127 2kw mosfet 9V 1A Transformer specification 9v 500ma transformer UC3724 UC3724N Unitrode U-127 UC1724J
    Text: UC1724 UC2724 UC3724 Isolated Drive Transmitter FEATURES DESCRIPTION • 500mA Output Drive, Source or Sink The UC1724 family of Isolated Drive Transmitters, along with the UC1725 Isolated Drivers, provide a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices


    Original     		UC1724 UC2724 UC3724 500mA UC1724 UC1725 600kHz IGBT Drive Using MOSFET Gate Drivers by U-127 2kw mosfet 9V 1A Transformer specification 9v 500ma transformer UC3724 UC3724N Unitrode U-127 UC1724J PDF

    Untitled

    Abstract: No abstract text available
    Text: FSS218 Ordering number : ENA0189A N-Channel Silicon MOSFET FSS218 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		ENA0189A FSS218 PW10s) 2000mm2 PW10s A0189-4/4 PDF

    S273 diode

    Abstract: No abstract text available
    Text: FSS273 Ordering number : ENA0329 N-Channel Silicon MOSFET FSS273 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		ENA0329 FSS273 PW10s) 1200mm2 PW10s A0329-4/4 S273 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). zApplications


    Original     		RUL035N02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch MOSFET RUE002N05 Dimensions Unit : mm  Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : RH Packaging specifications


    Original     		RUE002N05 Pw10s, R1010A PDF

    RK7002BM

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET Datasheet RK7002BM Structure Silicon N-channel MOSFET Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT Application Switching


    Original     		RK7002BM OT-23> R1102A RK7002BM PDF

    rku SOT-23

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET Datasheet RK7002BM Structure Silicon N-channel MOSFET Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKU Application Switching


    Original     		RK7002BM OT-23> R1102A rku SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: RUL035N02 Transistors 2.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). zApplications


    Original     		RUL035N02 RUL035N02 PDF

    tumt3

    Abstract: Z diode RTF025N03
    Text: RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate


    Original     		RTF025N03 tumt3 Z diode RTF025N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch + Nch MOSFET EM6K33 Structure ilicon N-channel MOSFET Dimensions Unit : mm  Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33 


    Original     		EM6K33 R1010A PDF

    EM6K33

    Abstract: No abstract text available
    Text: 1.2V Drive Nch + Nch MOSFET EM6K33 Dimensions Unit : mm  Structure ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33 


    Original     		EM6K33 R1010A EM6K33 PDF

    FSS218

    Abstract: S218 INVERTER motor drive SANYO
    Text: FSS218 Ordering number : ENA0189A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS218 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		FSS218 ENA0189A PW10s) 2000mm2 PW10s A0189-4/4 FSS218 S218 INVERTER motor drive SANYO PDF

    FSS273

    Abstract: TA72 a0329 S273 diode
    Text: FSS273 Ordering number : ENA0329 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS273 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		FSS273 ENA0329 PW10s) 1200mm2 PW10s A0329-4/4 FSS273 TA72 a0329 S273 diode PDF

    FSS248

    Abstract: S248 A0679
    Text: FSS248 Ordering number : ENA0679 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS248 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		FSS248 ENA0679 1200mm20 PW10s PW10s) A0679-4/4 FSS248 S248 A0679 PDF

    RUF025N02

    Abstract: No abstract text available
    Text: RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate


    Original     		RUF025N02 RUF025N02 PDF

    RUF015N02

    Abstract: tumt3
    Text: RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate


    Original     		RUF015N02 RUF015N02 tumt3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch + Nch MOSFET EM6K33 Dimensions Unit : mm  Structure ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33 


    Original     		EM6K33 R1010A PDF

    heat sink design guide, IGBT

    Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
    Text: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs


    OCR Scan     		O-220, O-247, O-264 OT-227 boar15 T0-220, O-264, heat sink design guide, IGBT EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247 PDF

    "MITSUBISHI HYBRID"

    Abstract: hybrid
    Text: Hybrid ICs Mitsubishi Hybrid ICs line-up Hybrid IC Home equipment application Motor drive Switching power supplies General use Industrial equipment application Transistor module drive MOSFET module drive IGBT module drive Motor vehicle IGBT module drive Power switching


    OCR Scan     		57936L "MITSUBISHI HYBRID" hybrid PDF