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    DRF200 Search Results

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    DRF200 Price and Stock

    Hirose Electric Co Ltd MF10S-WDRF20-0200(31)

    CONN FBR OPTIC RCPT HSG FOR MU
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    Schurter Electronic Components 4430.3616 (ALTERNATE: TA45-ABDRF200C0)

    CBE TA45-ABDRF200C0 | Schurter 4430.3616
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    RS 4430.3616 (ALTERNATE: TA45-ABDRF200C0) Bulk 12 Weeks 20
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    Schurter Electronic Components 4430.3634 (ALTERNATE: TA45-ABDRF200C0-AZM03)

    CBE TA45-ABDRF200C0-AZM03 | Schurter 4430.3634
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    RS 4430.3634 (ALTERNATE: TA45-ABDRF200C0-AZM03) Bulk 12 Weeks 15
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    Schurter Electronic Components 3-100-114 (ALTERNATE: TA35-CBDRF200C0-000-CZM24)

    CBE TA35-CBDRF200C0-CZM24 | Schurter 3-100-114
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    RS 3-100-114 (ALTERNATE: TA35-CBDRF200C0-000-CZM24) Bulk 14 Weeks 10
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    Microchip Technology Inc DRF200G

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    NexGen Digital DRF200G 25
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    DRF200 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DRF200G Microsemi RF Driver IC; P(out) (W): 50; fO (MHz): 30; VDD (V): 25; RqJC (°C/Watt): 1.2; Case Style: T3B; COO: D-E Original PDF

    DRF200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF2001T3D

    Abstract: bv-300 RF*T3D RF2001 TRS1 DRF2001T3D RF2001-T3D ,RF2001T3D
    Text: SPICE PARAMETER RF2001T3D by ROHM FAE Div. * DRF2001T3D D model * Date: 2008/07/29 .MODEL DRF2001T3D D + IS=15.486E-9 + N=1.4399 + RS=22.191E-3 + IKF=94.033E-3 + CJO=363.34E-12 + M=.48883 + VJ=.59618 + ISR=101.31E-12 + NR=4 + BV=300 + TT=41.113E-9 + TRS1=-0.001


    Original     		PDF RF2001T3D DRF2001T3D 486E-9 191E-3 033E-3 34E-12 31E-12 113E-9 RF2001T3D bv-300 RF*T3D RF2001 TRS1 RF2001-T3D ,RF2001T3D

    ultrasound transducer circuit driver

    Abstract: TC. 12A MOSFET Drivers ultrasound transducer high power driver ultrasound transducer "RF MOSFETs" RF MOSFET Driver "30 mhz" driver Amplifier DRF200 DRF200G mosfet gate driver
    Text: DRF200G 30MHz, 12A, MOSFET Gate Driver PRELIMINARY MOSFET GATE DRIVER The DRF200 drives up to 3nF gate capacitance of RF MOSFETs to frequencies over 15MHz or 30MHz into 50Ω. The output rise and fall times are 10ns, into 50Ω, 15ns into 3nF+50Ω. The DRF200 can deliver 100W of


    Original     		PDF DRF200G 30MHz, DRF200 15MHz 30MHz ultrasound transducer circuit driver TC. 12A MOSFET Drivers ultrasound transducer high power driver ultrasound transducer "RF MOSFETs" RF MOSFET Driver "30 mhz" driver Amplifier DRF200G mosfet gate driver

    DRF200G

    Abstract: DRF100 DRF200 ultrasound transducer
    Text: DRF200G 15V, 8A, 30MHz MOSFET Driver The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents ≥8A RMS, while


    Original     		PDF DRF200G 30MHz DRF200 15MHz. DRF200 15MHz 30MHz DRF200G DRF100 ultrasound transducer

    2nf capacitor

    Abstract: DRF200 DRF200G
    Text: DRF200G Evaluation Board Figure 1 shows a simplified circuit diagram for the DRF200, a High Power MOSFET Driver. The control signal is applied to the driver through pin 1 IN with a signal ground on pin 2 (SG) that forms a Kelvin Ground return. DC power in is applied at Pin 4 (+Vdd)


    Original     		PDF DRF200G DRF200, DRF200 DRF200. 2nf capacitor

    RF2001

    Abstract: 371E RF2001T2D DRF2001T2D EG98 tt 36 n
    Text: SPICE PARAMETER RF2001T2D by ROHM FAE Div. * DRF2001T2D D model * Date: 2008/07/29 .MODEL DRF2001T2D D + IS=97.371E-12 + N=1.0037 + RS=5.9997E-3 + IKF=29.568E-3 + EG=.98 + CJO=368.36E-12 + M=.4201 + VJ=.48168 + ISR=1.0505E-9 + NR=3 + BV=200 + TT=36.748E-9


    Original     		PDF RF2001T2D DRF2001T2D 371E-12 9997E-3 568E-3 36E-12 0505E-9 748E-9 RF2001 371E RF2001T2D EG98 tt 36 n

    diode sg 55

    Abstract: drf100 DRF200 DRF200G 30mhz mosfet driver
    Text: DRF200G 15V, 8A, 30MHz MOSFET Driver The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents ≥8A RMS, while


    Original     		PDF DRF200G 30MHz DRF200 15MHz. DRF200 15MHz 30MHz diode sg 55 drf100 DRF200G 30mhz mosfet driver

    bv430

    Abstract: DRF2001T4S RF2001T4S RF2001
    Text: SPICE PARAMETER RF2001T4S by ROHM FAE Div. * DRF2001T4S D model * Date: 2008/07/29 .MODEL DRF2001T4S D + IS=24.821E-9 + N=1.3909 + RS=25.667E-3 + IKF=.1045 + EG=1.0500 + CJO=417.94E-12 + M=.39034 + VJ=.42637 + ISR=1.3747E-9 + NR=3 + BV=430 + TT=41.927E-9 + TRS1=-0.005


    Original     		PDF RF2001T4S DRF2001T4S 821E-9 667E-3 94E-12 3747E-9 927E-9 bv430 RF2001T4S RF2001

    DRF200

    Abstract: EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5
    Text: AC-DC DIN Rail 50-200 Watts THE XPERTS IN POWER DRF Series Input 187-528 VAC 1Ø • • Adjustable Output • High Peak Current Capability • Overvoltage Protection • Overcurrent Protection • International Safety Approvals Specification Input Input Voltage


    Original     		PDF DRF200 DRF200) EN61000-4-5 UL1950, EN60950, EN50178 DRF50US24-N1 DRF75US24-N1 DRF200PS24-N1 DRF50 DRF200 EN61000-4-2 EN61000-4-3 EN61000-4-4

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit