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    DRAIN BODY BREAKDOWN VOLTAGE Search Results

    DRAIN BODY BREAKDOWN VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation

    DRAIN BODY BREAKDOWN VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZVN4424G

    Abstract: ZVN4424 ZVP4424G DSA0037385 10VZ/X/
    Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 240 Gate-Source Threshold Voltage VGS(th) 0.8 Gate-Body Leakage IGSS


    Original     		PDF OT223 ZVN4424G 400mA ZVN4424G ZVN4424 ZVP4424G DSA0037385 10VZ/X/

    zvn4206

    Abstract: zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784
    Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX.


    Original     		PDF OT223 ZVN4206G zvn4206 zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784

    "low threshold mosfet"

    Abstract: TN2524N8 VN2210N3 VN2224 VN2224N3 ICM7555 IRF520 TN0604N3 TN2524N
    Text: AN-D02 Application Note Low-Threshold TN/TP Series MOSFETs: Structure, Performance and Applications Introduction age. One method of reducing threshold voltage is to reduce the body dopant concentration until the required VGS th is met. This technique by itself is dangerous because it degrades other device parameters. The first and most important of these is drain-source breakdown (BVDSS), which is a


    Original     		PDF AN-D02 "low threshold mosfet" TN2524N8 VN2210N3 VN2224 VN2224N3 ICM7555 IRF520 TN0604N3 TN2524N

    Trench MOSFET Termination Structure

    Abstract: Diodes ed26 PN channel MOSFET 10A Design Seminar electric field International Power Sources International Semiconductor Technologies etal p407 vishay ED26 Designing with Field Effect Transistors
    Text: Presented at the 7th International Seminar on Power Semiconductors, ISPS’06, Prague, Czech Republic, 2006. Low-Voltage, Super-Junction Technology Deva N. Pattanayak, Yuming Bai, and King Owyang Vishay Siliconix 2201 Laurelwood Road, Santa Clara, CA 95054, USA


    Original     		PDF

    "VDSS 800V" mosfet

    Abstract: 3N80
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T O-220 O-220F O-22ues QW-R502-283 "VDSS 800V" mosfet 3N80

    POWER MOSFET Rise Time

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3710 Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or


    Original     		PDF UF3710 UF3710 O-220 O-263 UF3710Lues QW-R203-036 POWER MOSFET Rise Time

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
    Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    2sk2278

    Abstract: 2SK2278L 2SK1317
    Text: 2SK2278 L , 2SK2278 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching Features • • • • 4 1 2 High breakdown voltage VDSS = 1500 V High speed switching No secondary breakdown Suitable for Switching regulator, DC – DC converter


    Original     		PDF 2SK2278 2SK1317. 2SK2278L 2SK1317

    utc 3n80l

    Abstract: 3n80 3N80G 3N80L-TF1-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 800Volts 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TM3-T 3N80G-TM3-T 3N80L-TN3-T utc 3n80l 3n80 3N80G

    AN-1084

    Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
    Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5


    Original     		PDF AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841

    3N80G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 800Volts 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TF2-T 3N80G-at QW-R502-283 3N80G

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
    Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T QW-R502-283

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7P20 Power MOSFET 200V P-CHANNEL MOSFET „ DESCRIPTION The 7P20 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use


    Original     		PDF QW-R502-288

    Untitled

    Abstract: No abstract text available
    Text: FCPF400N80ZL1 N-Channel SuperFET II MOSFET 800 V, 11 A, 400 mΩ Features Description • Typ. RDS on = 340 mΩ SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


    Original     		PDF FCPF400N80ZL1 FCPF400N80ZL1

    fairchild 4245

    Abstract: FCA36N60NF
    Text: SupreMOS FCA36N60NF N-Channel tm SupreMOS®, FRFET®,MOSFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS® MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCA36N60NF FCA36N60NF fairchild 4245

    P603

    Abstract: B6030L CEP6030LS2 CEB6030LS2
    Text: CEP6030LS2/CEB6030LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVdss VgSz OV, ID=250|oA 30 Zero Gate Voltage Drain Current Idss Vds=24V, Vgs =0V Gate-Body Leakage Igss Vgs=±16V,Vds=0V


    OCR Scan     		PDF CEP6030LS2/CE B6030LS2 250hA P603 B6030L CEP6030LS2 CEB6030LS2

    CEP603AL

    Abstract: CEB603ALS2 CEP603A
    Text: CEP603ALS2/CEB603ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voilage Drain Current Idss V ds=24V, V gs =0V 10 [iA Gate-Body Leakage


    OCR Scan     		PDF CEP603ALS2/CEB603ALS2 250hA CEP603AL CEB603ALS2 CEP603A

    Untitled

    Abstract: No abstract text available
    Text: CEP6031LS2/CEB6031LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voltage Drain Current Idss V ds =24V, V gs =0V 10 pA Gate-Body Leakage


    OCR Scan     		PDF CEP6031LS2/CEB6031LS2 250hA

    B703A

    Abstract: GS109 P703
    Text: CEP703ALS2/CEB703ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BV dss V gSz OV, ID=250[i A 30 Zero Gate Voltage Drain Current Idss V ds =24V, Vgs =0V 10 [iA Gate-Body Leakage


    OCR Scan     		PDF CEP703ALS2/CEB703ALS2 B703A GS109 P703

    Untitled

    Abstract: No abstract text available
    Text: 2SK1317 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver


    OCR Scan     		PDF 2SK1317

    Untitled

    Abstract: No abstract text available
    Text: 2SK2393 Silicon N-Channel MOS FET HITACHI November 1996 Application High voltage / High speed power switching Features • Low on-resistance, High breakdown voltage • High speed switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching regulator, Motor Control


    OCR Scan     		PDF 2SK2393

    2SK1317

    Abstract: 25fv Hitachi Scans-001 4030D
    Text: 2SK1317 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • High breakdown voltage V DSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver


    OCR Scan     		PDF 2SK1317 2SK1317 25fv Hitachi Scans-001 4030D

    2SK2225

    Abstract: 2SK2225 APPLICATION CIRCUIT 2sk2225* typical circuit
    Text: 2SK2225 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • High breakdown voltage V DSS = 1500 V • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter


    OCR Scan     		PDF 2SK2225 ADE-208-140 2SK2225 2SK2225 APPLICATION CIRCUIT 2sk2225* typical circuit