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    DRA03TE Search Results

    DRA03TE Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DRA03TE Unknown Power and Industrial Semiconductors Data Book Scan PDF
    DRA03TE Sanyo Semiconductor THYRISTOR SCR WITH REVERSE DIODE 300V 9A 3TO-92 Scan PDF
    DRA03TE Sanyo Semiconductor 0.3A Reverse Blocking Thyristor Scan PDF

    DRA03TE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    m21ca

    Abstract: SFOR3G42 sfor1g42 BT169D p0107db 03P4M 9CR1401C 2Nb91 150C35B s2512dk
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 DCR 1003SN0404 PSIJ1900-3 PSIJ2200-3 FT2500CL6 FT2500CL6 PSIJ2600-3 PSIJ3000-3 PSIJ3400-3 PSIK4000-3 T7S7035564DN ~~~~~~ 15 20 BTX1B-300 40C35 40C35B 55C35 55C35B 55C35BF 55C35F 70C35B jgg5~!jt25 30


    Original     		PDF 1003SN0404 PSIJ1900-3 PSIJ2200-3 FT2500CL6 PSIJ2600-3 PSIJ3000-3 PSIJ3400-3 PSIK4000-3 T7S7035564DN m21ca SFOR3G42 sfor1g42 BT169D p0107db 03P4M 9CR1401C 2Nb91 150C35B s2512dk

    DRA03TE

    Abstract: DRA05E T0202 T092
    Text: Reverse-blocking Thyristors VRM V IT (A) let (mA) VGT(V) - 0.2 0.8 T092 - 1 0.8 T092 (built-in resistor) DRA2TE DRA2TG 0.2 0.8 T0202 3.0 DRE3E ORE3G 0.2 0.8 T0202 5.0 DRA5E DRA5G 40 1.5 T0220 8.0 DRA8E DRA8G 40 1.5 T0220 400 600 0.3 DRA03TE 0.5 DRA05E 2.0


    OCR Scan     		PDF DRA03TE DRA05E T0202 T0220 T0202 T092

    S6111

    Abstract: DRA01B DRA01C DRA01E DRA03TB DRA03TC DRA03TE SG16AA40 SG16AA60 SG25AA20
    Text: iü & s t? p u r p p IrtlrtLOlßW 0 0 0 0*0 co eo m co cnj OOOOO r r o£ cw : te G> csi co eo co o LOLOLOLOLO LOLOo O o esj eo cg co eo co co o O O OOOOO o O -H OOOOO OOOOO CO Tstg LOLO1 -04 -0LO o o o o lo LOLOLOLOLO LOLOLOLOLO LOLOlo lo O O co co co co eo


    OCR Scan     		PDF 2-10ms SG16AA40 SG16AA60 SG25AA20 SG25AA40 SG25AA60 H-101 S6111 DRA01B DRA01C DRA01E DRA03TB DRA03TC DRA03TE SG16AA40

    SY 356

    Abstract: sy 171 S6146G SF0R1A42 Sfor1a42 DRA01B DRA01C DRA01E DRA03TB DRA03TC
    Text: - Si 1 Vth 1. 50 1. 50 1. 40 1. 40 1.40 2. 00 2. 00 2. 00 2. 00 1. 60 1, 60 1. 60 1. 60 1. 60 1. 60 1. 60 1. 60 2. 50 2. 50 2. 50 2. 00 2.00 2. 00 2. 00 1 . 60 1 . 60 1 . 60 1 . 60 1 . 60 1. 60 1. 60 1. 60 1. 50 1. 50 1. 50 1 . 60 2. 30 Tj °C 25 25 25 25


    OCR Scan     		PDF SG16AA40 SG16AA60 SG25AA20 SG25AA40 H-101 SY 356 sy 171 S6146G SF0R1A42 Sfor1a42 DRA01B DRA01C DRA01E DRA03TB DRA03TC

    SGD-100

    Abstract: SGD-100T SPD-121 SPD-121A SPD-121M SPD-121P SPD-122P SPD-221 SPD-221A
    Text: Packaged GaAs Schottky Barrier Diodes Single diodes Electrical characteristics iT-, = 25 C Absolute maximum ratings Package type Device SPD-121 Ceramic Applications C- to X-band applications, DBS and measuring instruments c, t ÿ Rs Lc @ P -f If Vr IV) lo


    OCR Scan     		PDF SPD-121 SPD-121M SPD-121P SPD-122P SPD-221 DTA05E T0202 T0220 SGD-100 SGD-100T SPD-121A SPD-221A

    SHS210

    Abstract: SHS361
    Text: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)


    OCR Scan     		PDF SBL-12Ì SBL-801« SBL-802* SBL-803® SBL-804» SBL-221® SHS264 SHS311 SHS320 SHS330 SHS210 SHS361

    SFOR1A42

    Abstract: SY 356 S6370 SF0R1A42 sy 171 SG25AA60 S6111 sj 2025 DRA01B DRA01C
    Text: I r t lr t L O lß W c o eo m co cnj o O O lo lo -H -H —1CO CO LO LO LO LO LO co co eo c o co LO eo o T T T T T T T T T T T T T T T T T T T T LO LO LO LO LO c o c o c o CO CO LO LO LO LO LO c o co co co eo T T T T T T T T T T T T T T T o o o o o o o o o o


    OCR Scan     		PDF 2-10ms SG16AA40 SG16AA60 SG25AA20 SG25AA40 SG25AA60 H-101 SFOR1A42 SY 356 S6370 SF0R1A42 sy 171 S6111 sj 2025 DRA01B DRA01C

    DRA03TE

    Abstract: DRA03T DRA03TB DRA03TC DRA03TG T092
    Text: Ordering number : EN1881A I SA\YO DRA^T N0.I88IA Silicon Plan ar Type i 0.3A Reverse Blocking Thyristor Features •Low-power switching and control •Sm all size and light weight ■Peak OFF-state reverse voltage : —100 to —600V •Average ON-state cu rren t: 0.3A


    OCR Scan     		PDF EN1881A I88IA -600V DRA03TB DRA03TC DRA03TE DRA03TG DRA03T T092