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    DR208 Price and Stock

    Samtec Inc HDR-208460-01-HLCD

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    Samtec Inc HDR-208159-01

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    Samtec Inc HDR-208854-02-FQSFP

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    Samtec Inc HDR-208854-03-FQSFP

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    Samtec Inc HDR-208017-01-HLCD

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    DR208 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DR208 EIC Semiconductor Silicon Rectifier Diodes Original PDF
    DR208 EIC Semiconductor Silicon Rectifier Diode Original PDF
    DR208G EIC Semiconductor GLASS PASSIVATED JUNCTION SILICON RECTIFIERS Original PDF
    DR208G Good-Ark GLASS PASSIVATED JUNCTION RECTIFIER Original PDF

    DR208 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A12L

    Abstract: A14L IDT70V3579 IDT70V3579S
    Text: HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 5/6ns max. Pipelined output mode


    Original     		PDF IDT70V3579S 100MHz 70V3579 36-Bit) A12L A14L IDT70V3579 IDT70V3579S

    70V3569

    Abstract: A12L A13L IDT70V3569 IDT70V3569S
    Text: HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V3569S Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed clock to data access


    Original     		PDF IDT70V3569S 133MHz 133MHz wri12/99: 133MHz, 70V3569 A12L A13L IDT70V3569 IDT70V3569S

    tdc 310

    Abstract: ba6l BA6R 10 35L U1
    Text: HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip


    Original     		PDF 200MHz 166MHz 133MHz) 14Gbps SMEN-01-04 BF-208 tdc 310 ba6l BA6R 10 35L U1

    ba6l

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks – 2 megabits of memory on chip


    Original     		PDF 200MHz 166MHz 133MHz) 14Gbps SMEN-01-05 SMEN-01-04 ba6l

    DR201

    Abstract: DR200 DR202 DR204 DR206 DR208 DR210
    Text: DR200 - DR210 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 2.0 Amperes D2 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4 MIN. 0.161 (4.10)


    Original     		PDF DR200 DR210 UL94V-O MIL-STD-202, DR201 DR202 DR204 DR206 DR208 DR210

    IDT70T659

    Abstract: No abstract text available
    Text: HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ Busy and Interrupt Flags On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port


    Original     		PDF 256/128K 100mV) 150mV 256-ball 208-pin 208-ball IDT70T659

    10 35L U4

    Abstract: 70V7589 IDT70V7589 IDT70V7589S BA5L
    Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7589S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks


    Original     		PDF IDT70V7589S 166MHz 133MHz) 12Gbps SMEN-01-05 SMEN-01-04 10 35L U4 70V7589 IDT70V7589 IDT70V7589S BA5L

    IDT70T659

    Abstract: 9S12 CAN 9S12
    Text: Š Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T651/9S HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port


    Original     		PDF IDT70T651/9S 256/128K 100mV) 150mV 256-ball 208-pin 208-ball IDT70T659 9S12 CAN 9S12

    OE33

    Abstract: bel 188 transistor IDT72V73263
    Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH WITH RATE MATCHING 16,384 X 16,384 CHANNELS FEATURES: • • • • • • • • • • • • • • • • Up to 64 serial input and output streams Maximum 16,384 x 16,384 channel non-blocking switching


    Original     		PDF 048Mb/s, 096Mb/s, 192Mb/s, 384Mb/s 768Mb/s D8-15 drw19 BB208-1) DR208-1) OE33 bel 188 transistor IDT72V73263

    70V7519

    Abstract: IDT70V7519 IDT70V7519S ba6l
    Text: Š HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip


    Original     		PDF 200MHz 166MHz 133MHz) 14Gbps BC-256 70V7519 IDT70V7519 IDT70V7519S ba6l

    O23R

    Abstract: o32l 70V3579 A12L A14L IDT70V3579 IDT70V3579S optl p2 3.5mm
    Text: Š HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70V3579S Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed clock to data access


    Original     		PDF IDT70V3579S 133MHz 133MHz O23R o32l 70V3579 A12L A14L IDT70V3579 IDT70V3579S optl p2 3.5mm

    IDT70T3589

    Abstract: IDT70T3599 70T359 70T3589
    Text: HIGH-SPEED 2.5V 256/128/64K x 36 IDT70T3519/99/89S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access


    Original     		PDF 256/128/64K IDT70T3519/99/89S 200MHz 166MHz 133MHz) 14Gbps IDT70T3589 IDT70T3599 70T359 70T3589

    70T3589

    Abstract: No abstract text available
    Text: HIGH-SPEED 2.5V 256/128/64K x 36 IDT70T3519/99/89S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access


    Original     		PDF 256/128/64K IDT70T3519/99/89S 200MHz 166MHz 133MHz) 14Gbps 70T3589

    OF590

    Abstract: No abstract text available
    Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 16,384 X 16,384 ADVANCE INFORMATION IDT72V71660 CONFIDENTIAL FEATURES: DESCRIPTION: • • The IDT72V71660 has a non-blocking switch capacity of 2,048 x 2,048 channels at 2.048 Mb/s, 4,096 x 4,096 channels at 4.096 Mb/s, and 8,192 x


    Original     		PDF IDT72V71660 IDT72V71660 inT72V71660 BB208-1) DR208-1) 72V71660 drw18 OF590

    64Kx8 dual-port CMOS RAM

    Abstract: 64Kx8 CMOS RAM BF208 fast sram 100mhz BC256 70V3379 70V9079 70V9089 70V9099 70V9189
    Text: THE MOST COMMONLY ASKED QUESTIONS ABOUT SYNCHRONOUS DUAL-PORT SRAMS APPLICATION NOTE AN-254 By Cheryl Brennan What is a dual-port? A dual-port SRAM is a single static RAM array with two sets of address, data, and control signals typically left and right for accessing that array.


    Original     		PDF AN-254 64Kx8 dual-port CMOS RAM 64Kx8 CMOS RAM BF208 fast sram 100mhz BC256 70V3379 70V9079 70V9089 70V9099 70V9189

    B12 IC marking code

    Abstract: 70V3599 A12L IDT70V3599 IDT70V3599S
    Text: HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V3599S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access


    Original     		PDF IDT70V3599S 166MHz 133MHz) 12Gbps 166MHz 36-Bit) B12 IC marking code 70V3599 A12L IDT70V3599 IDT70V3599S

    DR206G

    Abstract: DR210G DO-204AC DR200G DR201G DR202G DR204G dr202
    Text: DR200G thru DR210G Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 2.0 Amperes Features ‹ Glass passivated chip ‹ High current capability ‹ High reliability ‹ Low reverse current ‹ Low forward voltage drop Mechanical Data


    Original     		PDF DR200G DR210G DO-204AC DO-15) MIL-STD-202, 100oC DR206G DR210G DR201G DR202G DR204G dr202

    OF590

    Abstract: of570 OF622 OF422 sfe 6,5 mb TX57 DLE40 OF402 OF450 OF502
    Text: PRELIMINARY IDT72V71660 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 16,384 X 16,384 FEATURES: DESCRIPTION: • • The IDT72V71660 has a non-blocking switch capacity of 2,048 x 2,048 channels at 2.048Mb/s, 4,096 x 4,096 channels at 4.096Mb/s, and 8,192 x


    Original     		PDF IDT72V71660 IDT72V71660 048Mb/s, 096Mb/s, 192Mb/s 384Mb/s. BB208-1) DR208-1) OF590 of570 OF622 OF422 sfe 6,5 mb TX57 DLE40 OF402 OF450 OF502

    IDT70T659

    Abstract: No abstract text available
    Text: HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.


    Original     		PDF 256/128K 10/12/15ns IDT70T651/9 IDT70T651/9S 208-ball BF-208) 70T651 70T659 IDT70T659

    JESD22-a100

    Abstract: JESD22-A102 IDT82V2044E IDT82V2084 DR208 IDT82V2048E IDT82V2088 JESD22-A108 JESD22A100 STD-78
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: T0512-01 DATE: 12/23/05 Product Affected: IDT82V2088, IDT82V2084, IDT82V2048E IDT82V2044E on All Package Options Date Effective:


    Original     		PDF T0512-01 IDT82V2088, IDT82V2084, IDT82V2048E IDT82V2044E DR208 208-pin JESD22-A108 EIA/JESD22A100 168hrs JESD22-a100 JESD22-A102 IDT82V2084 DR208 IDT82V2048E IDT82V2088 JESD22-A108 JESD22A100 STD-78

    Untitled

    Abstract: No abstract text available
    Text: i|g; m I | • ''• d m r 1 M L HIGH-SPEED 3.3V 16K x 36 | SYNCHRONOUS PIPELINED DUAL-PORT STATIC ra m PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access


    OCR Scan     		PDF IDT70V3569S

    Untitled

    Abstract: No abstract text available
    Text: 1»ill 1IFV1F 1 1 U 1 ‘! S y P r • W 0 L HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access


    OCR Scan     		PDF IDT70V3569S 100nd

    Untitled

    Abstract: No abstract text available
    Text: 1» i l l 1 I F V 1 F III 11 Jl 1 ‘! S y P r • L HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3579S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location


    OCR Scan     		PDF IDT70V3579S 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Glass passivated rectifier diodes. 1 Amp. to 3 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Peak Forward Forward Rectified Reverse T Y PE Current Current Voltage If av Ta V rrm I fr m (A) Axial Lead | S.M.D.


    OCR Scan     		PDF 4007G BY133G 1N5391G/GNOA DO-41/SMA 1N5391G 1NS392G 1NS393G 1NS394G 1NS39SG 1N5396G