VDDSPD
Abstract: IC PIN CONFIGURATION OF 74 47
Text: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability
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SL72E5M256M8M-B75EW
184-Pin
PC2100)
PC2100
DDR266B
133MHz--7
cycles/64ms
JEP-106E
VDDSPD
IC PIN CONFIGURATION OF 74 47
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W3DG6430V-D2
Abstract: No abstract text available
Text: White Electronic Designs W3DG6430V-D2 PRELIMINARY* 256MB - 32M x 64 BUFFERED SDRAM MODULE FEATURES DESCRIPTION Burst Mode Operation The W3DG6430V is a 32M x 64 synchronous DRAM module which consists of sixteen 32Mx4 SDRAM components in TSOP II package, three very high speed
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W3DG6430V-D2
256MB
W3DG6430V
32Mx4
W3DG6430V10D2
100MHz
W3DG6430V-D2
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SL72B4C16M4F-A60V
Abstract: Dram 168 pin EDO buffered 0212M
Text: SL72B4C16M4F-A60V 16M X 72 Bits DRAM 168-Pin DIMM with EDO, ECC , and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns The SiliconTech SL72B4C16M4F-A60V is an 16M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM).
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SL72B4C16M4F-A60V
168-Pin
SL72B4C16M4F-A60V
400-mil
34-pin
168pin
110ns
A1-A11
DQ12-15
Dram 168 pin EDO buffered
0212M
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SL64G4B4M2E-A60
Abstract: No abstract text available
Text: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech
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144-PIN
SL64G4B4M2E-A60
104ns
SL64G4B4M2E-A60
24-pin
300-mil
DQ20-23
A0-A10
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A0-A12
Abstract: No abstract text available
Text: SL72U4C16M8F-AxxV 16M X 72 Bit 128MB DRAM 168-Pin Unbuffered DIMM with EDO and ECC FEATURES • • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL…-A50V 50ns 13ns 84ns 20ns SL…-A60V 60ns 15ns 104ns 25ns
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SL72U4C16M8F-AxxV
128MB)
168-Pin
-A50V
-A60V
104ns
cycles/64ms
SL72U4C16M8F-AxxV
A0-A12
DQ16-19
A0-A12
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Untitled
Abstract: No abstract text available
Text: SL72B4B4M4F-A60V 4M X 72 Bit DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns 110ns The SiliconTech SL72B4B4M4F-A60V is a 4M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM). The module
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SL72B4B4M4F-A60V
168-Pin
110ns
SL72B4B4M4F-A60V
24-pin
300-mil
168-pin
A1-A11
DQ40-43
DQ8-11
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0244M
Abstract: SL64U4B4M2E-A60V
Text: SL64U4B4M2E-A60V 4M X 64 Bit 32MB DRAM 168-Pin Unbuffered DIMM with EDO FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL64U4B4M2E-A60V is a 4M x 64 bit Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM). This
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SL64U4B4M2E-A60V
168-Pin
104ns
SL64U4B4M2E-A60V
24-pin
300-mil
168pin
A0-A10
DQ36-39
DQ8-11
0244M
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A1-A10
Abstract: No abstract text available
Text: SL72B6C4M2F-AxxV 4M X 72 Bits DRAM 168-Pin DIMM with EDO Mode and ECC 2K Refresh FEATURES • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL…-A60V 60ns 20ns 110ns 30ns SL…-A70V 70ns 25ns 130ns 33ns The SiliconTech SL72B6C4M2F-AxxV is a 4M x 72 bits Dynamic
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SL72B6C4M2F-AxxV
168-Pin
-A60V
110ns
130ns
SL72B6C4M2F-AxxV
24-pin
-A70V
refreshQ44-47
A1-A10
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transistor CC 11 A
Abstract: No abstract text available
Text: SL72B4B8M4F-AxxV 8M X 72 Bits 64MB DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL…-A60V 60ns 20ns 110ns 30ns SL…-A70V 70ns 25ns 130ns 33ns The SiliconTech SL72B4B8M4F-AxxV is a 8M x 72 bits Dynamic
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SL72B4B8M4F-AxxV
168-Pin
-A60V
110ns
130ns
SL72B4B8M4F-AxxV
24-pin
300-mil
168-pin
-A70V
transistor CC 11 A
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U16A
Abstract: transistor CC 11 A U15B
Text: SL72B4F32M4F-AxxV 32M X 72 Bit DRAM 168-Pin DIMM with EDO Mode and ECC FEATURES • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL…-A50V 50ns 18ns 90ns 25ns SL…-A60V 60ns 20ns 110ns 30ns Extended Data Out EDO operation
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SL72B4F32M4F-AxxV
168-Pin
-A50V
-A60V
110ns
cycles/64ms
SL72B4F32M4F-AxxV
34-pin
400-mil
DQ36-39
U16A
transistor CC 11 A
U15B
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PC200
Abstract: PC2100 SL72E4H32M4M-A75DW SL72E4H32M4M-A75EW
Text: SL72E4H32M4M-A###W Preliminary* 32M X 72 Bits 256MB DDR SDRAM 184-Pin Registered DIMM ECC (PC1600/PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC1600/PC2100 Compliant (PC266A 133MHz—7.5ns@CL=2) (PC266B 133MHz—7.5ns@CL=2.5)
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SL72E4H32M4M-A#
256MB)
184-Pin
PC1600/PC2100)
PC1600/PC2100
PC266A
133MHz--7
PC266B
PC200
PC2100
SL72E4H32M4M-A75DW
SL72E4H32M4M-A75EW
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DM 024
Abstract: PC200 RE36 SL64A4L128M8L-A10DW SL64A4L128M8L-A75DW SL64A4L128M8L-A75EW U28 113 Ck19 1604H
Text: SL64A4L128M8L-A###W 128M X 64 Bits 1GB 200-Pin DDR SDRAM SO-DIMM (PC1600/PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A4L128M8L-A###W is a 128M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).
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SL64A4L128M8L-A#
200-Pin
PC1600/PC2100)
SL64A4L128M8L-A1EC
JEP-106E
DM 024
PC200
RE36
SL64A4L128M8L-A10DW
SL64A4L128M8L-A75DW
SL64A4L128M8L-A75EW
U28 113
Ck19
1604H
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HMD4M64D16EV
Abstract: HMD4M64D16V
Text: HANBiT HMD4M64D16V 32Mbyte 4Mx64 Fast Page Mode 4K Ref. 3.3V, DIMM 168 pin Part No. HMD4M64D16V GENERAL DESCRIPTION The HMD4M64D16V is a 4Mx64bits Dynamic RAM high density memory module. The HMD4M64D16V consists of sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOP 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or
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HMD4M64D16V
32Mbyte
4Mx64)
HMD4M64D16V
4Mx64bits
400mil
168-pin
HMD4M64D16EV
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HMD4M64D16E
Abstract: No abstract text available
Text: HANBiT HMD4M64D16E 32Mbyte 4Mx64 EDO Mode 4K Ref. 5V, DIMM 168 pin Part No. HMD4M64D16E GENERAL DESCRIPTION The HMD4M64D16E is a 4Mx64bits Dynamic RAM high density memory module. The HMD4M64D16E consists of sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or
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HMD4M64D16E
32Mbyte
4Mx64)
HMD4M64D16E
4Mx64bits
400mil
168-pin
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SL72U4B4M4F-A60V
Abstract: No abstract text available
Text: SL72U4B4M4F-A60V 4M X 72 Bits 32 MB DRAM 168-Pin Unbuffered DIMM with EDO and ECC FEATURES • Performance range: tRAC tCAC tRC 60ns • • • • • • • • • • GENERAL DESCRIPTION 15ns The SiliconTech SL72U4B4M4F-A60V is an 4M x 72 bits Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM)
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SL72U4B4M4F-A60V
168-Pin
SL72U4B4M4F-A60V
104ns
300-mil
24-pin
A0-A11
DQ16-19
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Dram 168 pin EDO buffered
Abstract: No abstract text available
Text: SL72B4C32M4F-B50VI 32M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES • Performance range: tCAC tRC tRAC 50ns • • • • • • • • • • GENERAL DESCRIPTION 18ns 90ns The SiliconTech SL72B4C32M4F-B50VI is an 32M x 72 bit Dynamic RAM DRAM Dual In-line Memory Module (DIMM).
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SL72B4C32M4F-B50VI
SL72B4C32M4F-B50VI
400-mil
34-pin
168pin
A1-A11
Dram 168 pin EDO buffered
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Untitled
Abstract: No abstract text available
Text: 168-PIN DIMMS STI7216107D1-60VG 16M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI7216107D1-60VG is an 16M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 16M x 4 bit DRAMs in 400-mil 34-pin
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STI7216107D1-60VG
168-PIN
110ns
STI7216107D1-60VG
400-mil
34-pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA- H ^7240 DGíñSbl SEL • THM72V4030BTG-60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTH M 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC51V16400BST on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large
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THM72V4030BTG-60/70
72V4030BTG
ofTC51V16400BST
THMxxxxxx-60)
THMxxxxxx-70)
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CDC2509
Abstract: AE CX0 600
Text: Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S3320T is a 32M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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KMM378S3320T
32Mx72
32Mx4,
KMM378S3320T
400mH
24-pin
200-pin
CDC2509
AE CX0 600
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Untitled
Abstract: No abstract text available
Text: STI7216207D1 -xxVG 168-PIN DIMMS 16M X72 Bit DRAM DIMM with EDO Mode and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC Vc VlPC STI.-60VG 60ns 20ns 110ns 30ns STI.-70VG 70ns 25ns 130ns 33ns EDO Mode operation CAS-before-RAS refresh capability
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STI7216207D1
168-PIN
-60VG
-70VG
110ns
130ns
32-pin
400-mil
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Untitled
Abstract: No abstract text available
Text: SDRAM MODULE Preliminary KMM375S3320T Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. REV. 4 July 1998 Preliminary KMM375S3320T SDRAM MODULE KMM375S3320T SDRAM DIMM
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KMM375S3320T
KMM375S3320T
32Mx72
32Mx4,
375S3320T
32Mx4
375S3320T-G8
125MHz
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LA 7652
Abstract: No abstract text available
Text: M302571 DQMMMST TMb I I HAS HARRIS S E M I C O N D U C T O R CD4000BMS, CD4001BMS CD4002BMS, CD4025BMS HARRIS SEMICOND SECTOR SñE J> CMOS NOR Gate December 1992 T 'H Pinouts Features CD4000BMS • High-Voltage Types 20V Rating • Propagation Delay Tim e
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CD4000BMS,
CD4001BMS
CD4002BMS,
CD4025BMS
100nA
CD4000BMS
CD4001BMS
63l-l
CD4002BMS
-I-07
LA 7652
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Untitled
Abstract: No abstract text available
Text: CELESTICA 4M x 72 ECC EDO BUFFERED DIMM FEATURES • • • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, P Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS
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168-pin
MO-161
20431C)
14459C
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Untitled
Abstract: No abstract text available
Text: SDRAM MODULE Preliminary KMM377S3227BT1 Revision History Revision 4 May 1998 - CLK input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. REV. 5 July 1998 Preliminary KMM377S3227BT1 SDRAM MODULE KMM377S3227BT1 SDRAM DIMM (Intel 1.0 ver. Base)
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KMM377S3227BT1
KMM377S3227BT1
377S3227BT1-G8
125MHz
32Mx4
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