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    Text: Philips Semiconductors ^ 5 3 *1 3 1 DQ31SQ1? M>41 M A P X ^^roductspecitication NPN 6 GHz wideband transistor “ DESCRIPTION BFQ22S N AUER PHILIPS/DISCRETE b'lE T> PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF DQ31SQ1 BFQ22S BFQ24. bbS3T31 003151H