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Text: Pin Information for the Cyclone V 5CGTFD9 Device Version 1.1 Note 1 Bank Number GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 3A 3A
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Text: Pin Information for the Cyclone V 5CGXBC5 Device Version 1.0 Note 1 Bank Number GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0
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Text: Pin Information for the Cyclone IV EP4CE75 Device Version 1.2 Notes 1 , (2), (3) Bank Number B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B2
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EP4CE75
PT-EP4CE75-1
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Text: Pin Information for the Cyclone V 5CGXBC4 Device Version 1.0 Note 1 Bank Number GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0
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Text: Pin Information for the Cyclone V 5CGTFD7 Device Version 1.1 Note 1 Bank Number GXB_L1 GXB_L1 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A
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CK3A
Abstract: No abstract text available
Text: Pin Information for the Arria V 5AGTFD3 Device Version 1.0 Note 1 Bank Number VREF PinName/Function (2) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0
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Text: Pin Information for the Stratix V 5SGXBB Device Version 1.0 Note 1 Bank Number GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4
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Text: Pin Information for the Cyclone V 5CGXFC7 Device Version 1.1 Note 1 Bank Number GXB_L1 GXB_L1 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A
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Text: Pin Information for the Arria V 5ASTMD5 Device Version 1.0 Note 1 Bank Number VREF PinName/Function (2), (3) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0
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Text: Pin Information for the Cyclone V 5CGXBC3 Device Version 1.0 Note 1 Bank Number GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 GXB_L0 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A
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Abstract: No abstract text available
Text: Pin Information for the Arria V 5AGTMC3 Device Version 1.0 Note 1 Bank Number VREF PinName/Function (2) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE • b*1E D bbS3T31 DQ2bmi 674 I Jl APX BB405B UHF VARIABLE CAPACITANCE DIODE The B6405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended for application in UHF tuners. This miniature diode can be mounted on a 2 E 5,08 mm pitch.
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bbS3T31
BB405B
B6405B
SbM13
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diode rj 93
Abstract: No abstract text available
Text: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage
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DQ2b352
BAW62
DO-35
BAW62
OD-27
DO-35)
7Z10519
D02b35e
diode rj 93
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BZW14 diode
Abstract: BZW14 SOD64
Text: N AMER PHILIPS/DISCRETE bTE D • bbSB'ìBl DQ2b7'ìcì Q7G * A P X BZW14 TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.
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BZW14
OD-64.
40Aim;
S20MF
bbS3T31
7Z89449
BZW14 diode
BZW14
SOD64
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14 ker
Abstract: No abstract text available
Text: • b24TÔ2b MF1012S-1 FOR GPS SYSTEM DQ2b502 DESCRIPTION FEATURES T h is S A W f ilt e r fo r th e tr a n s m ittin g or 1. SM D package insures small size, lightweight. r e c e iv in g RF c ir c u it o f G lo b a l P o s itio n in g 2. A djustm ent free.
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MF1012S-1
DQ2b502
MF1012S-1
000MH2
14 ker
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLS CHA F 47E » SIEM EN S • SSBSbDS DQ2bßöl 4 « S I E G W ? . RM-73A Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0003 DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-73A is a mask-diffused GaAsP monolithic light-emitting diode. With a bright and
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RM-73A
GaAs80-0003
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Untitled
Abstract: No abstract text available
Text: bb53^31 DQ2bQ12 0fl7 H A P X N AflER PHILIPS/DISCRETE PZTA13 PZTA14 b?E D y v SMALL-SIGNAL DARLINGTON TRANSISTORS NPN small-signal Darlington transistors in a microminiature SMD envelope SOT-223 . Designed primarily for preamplifier input applications requiring high input impedance.
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DQ2bQ12
PZTA13
PZTA14
OT-223)
PZTA63/64.
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Untitled
Abstract: No abstract text available
Text: H A R R I S SEtllCOND S E C T O R 3?E •■ 4 3 0 2 27 1 DQ2blfla T M H A S Advanced CMOS Logic ICs xT :*4k‘0 7 -0° -T UU-n7-l I 1 4<o0' 1 Recent Additions CD54AC175/3A CD54ACT175/3A
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CD54AC175/3A
CD54ACT175/3A
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BY438
Abstract: ALPs modulator
Text: N AMER PH ILIP S /D IS C R E TE bRE ]> • b b S B ^ l DQ2b471 24^ « A P X BY438 A PARALLEL EFFICIENCY DIODE D ouble-diffused passivated re c tifie r d io d e in a n h e rm e tica lly sealed axial-leaded glass envelope, intended fo r use as e ffic ie n c y diode in transistorized h o rizo n ta l d e fle ctio n c irc u its o f television receivers. The
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DQ2b471
BY438
OD-64.
BY438.
7Z77S29
BY438
ALPs modulator
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jeida+dram+88+pin
Abstract: jeida 88 pin jeida dram 88 pin
Text: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology
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STI321000C1
STI321000C1-60Vx
STI32100OC1-7OVx
STI321000C1-80Vx
110ns
130ns
150ns
88-PIN
jeida+dram+88+pin
jeida 88 pin
jeida dram 88 pin
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Untitled
Abstract: No abstract text available
Text: STI328000 72-PIN SIMMS 8M X 32 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI328000 is a 8M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI328000 consist of sixteen C M O S 4M x 4 bit D R A M s in 24pin S O J package mounted on a 72-pin glass-epoxy substrate.
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STI328000
STI328000-60
STI328000-70
STI328000-80
110ns
130ns
150ns
72-PIN
STI328000
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DC244
Abstract: No abstract text available
Text: STI644004G1-70SVGS pcbhw^ - j 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-70SVGS is a 4M x 64 bits Dynamic RAM high density memory module;. The Simple Technology STI644004G1-70SVGS consist of s ixteen CMOS
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STI644004G1-70SVGS
144-PIN
124ns
STI644004G1-70SVGS
24-pin
300-mil
DC244
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Untitled
Abstract: No abstract text available
Text: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 514405C is a CMOS dynam ic RA M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM514405C has realized higher density, higher performance and various functions by employing
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HM514405C
576-word
514405C
HM514405C
300-mil
26-pin
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Untitled
Abstract: No abstract text available
Text: HM67B3632 Series 32k x 36 bit Synchronous Fast Static RAM with Burst Counter and Self-Timed Write Product Preview h it a c h i Descriptions Features T he H itachi H M 6 7 B 3 6 3 2 is a 1 ,1 7 9 ,6 4 8 bits d en sity h igh p erform an ce syn ch ron ou s static
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HM67B3632
DQ0-DQ35,
HM67B3632FP1-10/11,
HM67B3632FP-10/11
66MHz
60MHz
FP-100H
HM67B3632FP1-*
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