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    gw 360

    Abstract: No abstract text available
    Text: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,


    Original     		PDF EDI2GG432128V 4x128Kx32 EDI2GG432128VxxD 4x128Kx32. 14mmx20mm EDI2GG432128V95D* EDI2GG432128V10D* EDI2GG432128V11D EDI2GG432128V12D gw 360

    128*64

    Abstract: transistor GW 93 H GW 94 H
    Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address


    Original     		PDF EDI2KG464128V 4x128Kx64, 4x128Kx64 EDI2KG64128VxxD 01581USA EDI2KG464128V 128*64 transistor GW 93 H GW 94 H

    Untitled

    Abstract: No abstract text available
    Text: EDI9F416128C 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks


    Original     		PDF EDI9F416128C 4x128Kx16 100ns EDI9F416128LP EDI9F416128C70BNC EDI9F416128C70BNI. 01581USA

    Untitled

    Abstract: No abstract text available
    Text: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,


    Original     		PDF EDI2GG418128V 4x128Kx18, 4x128Kx18 EDI2GG418128VxxD2 4x128Kx64. 14mmx20mm EDI2GG418128V95D* EDI2GG418128V10D* 4x128Kx18

    EDI2CG472128V

    Abstract: No abstract text available
    Text: EDI2CG472128V 4x128Kx72, 3.3V Sync/Sync Burst SRAM Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module contains eight (8)


    Original     		PDF EDI2CG472128V 4x128Kx72, 4x128Kx72 EDI2CG472128VxxD2 4x128Kx72. 14mmx20mm devic168 EDI2CG472128V85D2* EDI2CG472128V10D2* EDI2CG472128V12D2 EDI2CG472128V

    GW 94 H

    Abstract: EDI2CG472128VxxD2 transistor GW 93 H EDI2CG472128V
    Text: White Electronic Designs EDI2CG472128V ADVANCED* 4 Megabyte Sync/Sync Burst, Dual Key DIMM DESCRIPTION FEATURES The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module


    Original     		PDF EDI2CG472128V EDI2CG472128VxxD2 4x128Kx72. 14mmx20mm EDI2CG472128V85D2* 4x128Kx72 EDI2CG472128V10D2* EDI2CG472128V12D2 GW 94 H transistor GW 93 H EDI2CG472128V

    GW 94 H

    Abstract: A015 EDI2GG464128V ICC3-400
    Text: White Electronic Designs EDI2GG464128V 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES DESCRIPTION 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight


    Original     		PDF EDI2GG464128V 4x128Kx64 EDI2KG64128VxxD 4x128Kx64. 14mmx20mm mem050) GW 94 H A015 EDI2GG464128V ICC3-400

    14566

    Abstract: EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC
    Text: EDI9F416128C 4x128Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION • 4x128Kx16 bit CMOS Static The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR-4 substrate. • Random Access Memory


    Original     		PDF EDI9F416128C 4x128Kx16 EDI9F416128C 8192K 128Kx8 100ns EDI9F416128LP) EDI9F416128LP 14566 EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC

    EDI9F416128C100BNC

    Abstract: EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC
    Text: EDI9F416128C 4x128Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION n 4x128Kx16 bit CMOS Static The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR-4 substrate. n Random Access Memory


    Original     		PDF EDI9F416128C 4x128Kx16 EDI9F416128C 8192K 128Kx8 100ns EDI9F416128LP) EDI9F416128LP EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI2GG464128V-D 4x128Kx64 SYNCHRONOUS SRAM CARD EDGE DIMM, 3.3V DESCRIPTION FEATURES 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight


    Original     		PDF EDI2GG464128V-D 4x128Kx64 EDI2KG64128VxxD 4x128Kx64. 14mmx20mm EDI2GG464128V95D* 4x128Kx64 EDI2GG464128V10D*

    EDI2GG464128V

    Abstract: No abstract text available
    Text: EDI2GG464128V 4x128Kx64 Synchronous SRAM CARD EDGE DIMM, 3.3V FEATURES • 4x128Kx64 Synchronous The EDI2GG464128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight (8) Synchronous Burst Ram Devices,


    Original     		PDF EDI2GG464128V 4x128Kx64 EDI2GG464128VxxD 4x128Kx64. 14mmx20mm EDI2GG464128V95D* EDI2GG464128V10D* EDI2GG464128V11D EDI2GG464128V12D EDI2GG464128V

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through 4x128K x72 Synchronous, S ynchronous Burst The E D I2C G 472128V xxD2 is a S ynchronous/S ynchro­ Flow-Through A rchitecture nous Burst SRAM , 84 position Dual Key; Double High


    OCR Scan     		PDF EDI2CG472128V 4x128Kx72, 4x128K 72128V 4x128Kx72. 700P8511111111111 11111111111111II1111111111111111 111111111111111111111111111111111II111111 050TYP. EDI2CG472128V

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG432128V 2 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx32, 3.3V Module Features Synchronous Flow-Through 4x128K x32 Synchronous The EDI2KG 432128VxxD is a S ynchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts Module, orga­


    OCR Scan     		PDF EDI2KG432128V 4x128Kx32, 4x128K 432128VxxD 4x128Kx32.

    EDI2CG472128V

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through • 4x128K x72 Synchronous, S ynchronous Burst • Flow-Through A rchitecture • Linear and Sequential Burst Support via MODE pin DIMM 168 contacts Module, organized as 4x128Kx72.


    OCR Scan     		PDF EDI2CG472128V 4x128Kx72 CG472128V15D2 050TVP. EDI2CG472128V

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module


    OCR Scan     		PDF EDI2CG472128V 4x128Kx72 EDI2CG472128VxxD2 4x128Kx72. 14mmx20mm 472128V12D 472128V15D

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4x128Kx64,3.3V M o d u le Features Synchronous Flow-Through • 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 • Flow-Through Architecture position Card Edge DIMM 120 contacts Module, orga­


    OCR Scan     		PDF EDI2KG464128V 4x128Kx64 EDI2KG64128VxxD 4x128Kx64. 14mmx20mm EDI2KG4G4128V95D* EDI2KG464128V1QD' EDI2KG464128V11D EDI2KG464128V12D

    00z1

    Abstract: No abstract text available
    Text: ^EDI EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM •ELECTRONIC DESISM5, INC 4x128Kx72t 3.3V Module Features Sync/Sync Burst Flow-Through 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchro­ Flow-Through Architecture


    OCR Scan     		PDF 4x128Kx72 00z1

    Untitled

    Abstract: No abstract text available
    Text: MEk EDI9F416128C ELECTRONIC DESIGNS, NC.I 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs


    OCR Scan     		PDF EDI9F416128C 4x128Kx16 100ns EDI9F416128LP EDI9F416128C 8192K 128Kx8 EDI9F416128LP)

    ED12KG

    Abstract: EDI2KG
    Text: ^EDI EDI2KG 418128V 1 M egabyte Synchronous Card Edge DIM M ELECTRONIC DESIGNS IN C 4x128Kx18, 3.3V Module Features Synchronous Flow-Through 4x128K x18 Synchronous The E D I2KG 418128VxxD2 is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts module, orga­


    OCR Scan     		PDF EDI2KG418128 4x128Kx18 4x128Kx18, EDI2KG418128VxxD2 4x128K18128V10D* EDI2KG418128V11D EDI2KG418128V12D ED12KG EDI2KG

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG418128V 1 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx18, 3.3V Module Features Synchronous Flow-Through 4x128 K x18 Synchronous The E D I2KG 418128VxxD2 is a Synchronous SRAM , 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts module, orga­


    OCR Scan     		PDF EDI2KG418128V 4x128Kx18, 4x128 418128VxxD2 4x128Kx64.

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx64, 3 .3 V Module Features Synchronous Flow-Through 4x128K x64 Synchronous The ED I2KG64128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge DIMM 120 contacts Module, orga­


    OCR Scan     		PDF EDI2KG464128V 4x128Kx64, 4x128K I2KG64128VxxD 4x128Kx64. EDI2KG464128V10D* 4x128Kx64 EDI2KG464128V11D EDI2KG464128V12D

    9979

    Abstract: j117 J119
    Text: ^EDI EDI2KG432128V 2 M egabyte Synchronous Card Edge DIM M ELECTRONIC DESIGNS IN C 4x128Kx32, 3.3V Module Features Synchronous Flow-Through 4x128Kx32 Synchronous The EDI2KG 432128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts Module, orga­


    OCR Scan     		PDF EDI2KG432128V 4x128Kx32 4x128Kx32, EDI2KG432128VxxD 508-836-4850-Electronic EDI2KG432128V 9979 j117 J119

    J119

    Abstract: EDI2KG464128V11D ED12KG
    Text: ^EDI ED I2K G 464128V 4 M egabyte Synchronous Card Edge DIM M ELECTRONIC DESIGNS IN C 4x128Kx64, 3 .3 V M odule Features Synchronous Flow-Through 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge DIMM 120 contacts Module, orga­


    OCR Scan     		PDF EDI2KG464128V 4x128Kx64 4x128Kx64, EDI2KG64128VxxD 4x128Kx610D* EDI2KG464128V11D EDI2KG464128V12D J119 ED12KG

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ED/2KC418128V 1 Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4x128Kx18,3.3V Synchronous Flow-Through Module Features 4x128Kx18 Synchronous The EDI2KG418128VxxD2 is a Synchronous SRAM, 60 Flow-Through Architecture position Card Edge; DIMM 1 2 0 contacts module, orga­


    OCR Scan     		PDF 4x128Kx18 10F11F ED/2KC418128V EDI2KG418128VxxD2 4x128Kx64. 4x128Kxl