Untitled
Abstract: No abstract text available
Text: nvSRAM ADVANCE INFORMATION AS6nvLC512K8 AS6nvLC256K16 AVAILABLE AS MILITARY SPECIFICATIONS 512K x 8 / 256K x 16 nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage • Military Processing MIL-STD-883C para 1.2.2 • Temperature Range -55C to 125C FEATURES
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AS6nvLC512K8
AS6nvLC256K16
-55oC
125oC
MIL-STD-883C
AS6nvLC256K16
-40oC
125oC
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Untitled
Abstract: No abstract text available
Text: IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A APPLICATION SPEC # 29L0000.E36980 Engineering Change Number 13 ROW /1 1 COL / 2 BS 16Mb x 4 I/O x 4 Bank 13 ROW /1 0 COL / 2 BS (8Mb x 8 I/O x 4 Bank) Date E36980 13 ROW / 9 COL / 2 BS (4Mb x 16 I/O x 4 Bank)
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IBM0325404
IBM0325804
IBM0325164
IBM03254B4
256Mb
29L0000
E36980
IBM0325404CT3A-260
29L6113
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Untitled
Abstract: No abstract text available
Text: Paradigm PDM44538 32K x 18 Fast CMOS Synchronous Static RAM with Linear Burst Counter Features Description Interfaces directly with the Motorola 680x0 and PowerPC microprocessors 80,66, 60, 50 MHz The PDM44538 is a 589,824 bit synchronous random access memory organized as 32,768 x 18 bits. It has
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PDM44538
680x0
PDM44538
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Untitled
Abstract: No abstract text available
Text: IB M 0 4 1 8 1 3 P Q K B P relim inary 64K X 18 B U R ST P IP ELIN E SR A M Features • 64K x 18 Organization • Registered Addresses, Data Ins, Control sig nals, and Outputs • 0.5n CMOS Technology • Asynchronous Output Enable • Synchronous Burst Mode of Operation Compati
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100MHz
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Untitled
Abstract: No abstract text available
Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 90ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical
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M29W400T
M29W400B
512Kb
256Kb
10jas
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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Untitled
Abstract: No abstract text available
Text: SHARP SPEC No. [_ ISSUE: May 15 1996 To ; S P E C I F I C A T I O N S Product Type 1 6M F l a s h File Memory LH2 8 F 0 1 6 S U R - 7 0 Model No._ L H F 1 6 S 1 0 _ j&This specifications contains 44 pages including the cover and appendix.
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LHF16S10
protec00X1
jTSOP56--
P--1420
AA1I13
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Untitled
Abstract: No abstract text available
Text: IBM14N1372 IBM14N6472 H ig h -P erfo rm an ce S R A M M odules Features • 256K, 512K, and 1MB secondary cache module family using Synchronous and Asynchronous SRAMs. Fast access times: 9 and 11 ns using SSRAM; 12ns using ASRAM Byte Parity • Organized as a 32K, 64K, or 128K x 72 package
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IBM14N1372
IBM14N6472
160-lead,
i486/PentiumTM)
50MHz
66MHz
256KB,
512KB,
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