M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
|
Original
|
PDF
|
M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
|
Untitled
Abstract: No abstract text available
Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)
|
Original
|
PDF
|
S29NS-R
S29NS01GR,
S29NS512R,
S29NS256R,
S29NS128R
S29NS512P
S29NS512R.
S29VS256R
S29VS128R
|
M29W400B
Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
|
Original
|
PDF
|
M29W400T
M29W400B
512Kb
256Kb
M29W400T
M29W400B
M29W400BT
M29W400BB
FBGA48
M29W400
M29W400BB
|
JESD97
Abstract: M29F400 M29F400B M29F400BB M29F400BT
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical
|
Original
|
PDF
|
M29F400BT
M29F400BB
512Kb
256Kb
JESD97
M29F400
M29F400B
M29F400BB
M29F400BT
|
M29F800D
Abstract: M29F800DB M29F800DT
Text: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
|
Original
|
PDF
|
M29F800DT
M29F800DB
512Kb
TSOP48
M29F800D
M29F800DB
M29F800DT
|
M29DW323D
Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
|
Original
|
PDF
|
M29DW324DT
M29DW324DB
TSOP48
M29DW323D
TSOP48 outline
M29DW323DB
M29DW323DT
M29DW324D
M29DW324DB
M29DW324DT
|
M29W640DB
Abstract: M29W640D M29W640DT A0-A21 6A000
Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns
|
Original
|
PDF
|
M29W640DT
M29W640DB
TSOP48
TFBGA63
M29W640DB
M29W640D
M29W640DT
A0-A21
6A000
|
A17a
Abstract: A21A A18A MCP market MB84VY6A4A1 MB84VZ128A 92PIN CE-2Ra internal block diagram of mobile phone A22A
Text: New Products MB84VY6A4A1 2-Bus Type PS-MCP Mounted with 6 Memory Chips MB84VY6A4A1 The world first PS-MCP ＿ Package ＿ Stacked M CP with a 2-bus configuration, ＿ mounted with 4 memory chips for a cellular phone application block and 2 memory chips for a baseband block. MB84VY6A4A1 is configured with 328M bits
|
Original
|
PDF
|
MB84VY6A4A1
MB84VY6A4A1
40REF
80REF
A17a
A21A
A18A
MCP market
MB84VZ128A
92PIN
CE-2Ra
internal block diagram of mobile phone
A22A
|
W764M32V1-XBX
Abstract: No abstract text available
Text: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The
|
Original
|
PDF
|
W764M32V1-XBX
64Mx32
W764M32V1-XBX
32-bit
16-bit
1024-byte
prx32
|
Untitled
Abstract: No abstract text available
Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS
|
Original
|
PDF
|
M29F200BT
M29F200BB
256Kb
128Kb
TSOP48
|
555 NC timer
Abstract: No abstract text available
Text: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 5 MEMORY BLOCKS
|
Original
|
PDF
|
M29F100BT
M29F100BB
128Kb
TSOP48
555 NC timer
|
Untitled
Abstract: No abstract text available
Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
|
Original
|
PDF
|
M29W400BT
M29W400BB
512Kb
256Kb
TSOP48
|
ba1030
Abstract: M29W200BB
Text: M29W200BT M29W200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
|
Original
|
PDF
|
M29W200BT
M29W200BB
256Kb
128Kb
TSOP48
ba1030
M29W200BB
|
Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
|
Original
|
PDF
|
M29W160ET
M29W160EB
TSOP48
|
|
|
VOGT n3 503 20 010 50
Abstract: No abstract text available
Text: HFC - S active ISDN Microprocessor ARM7 based Preliminary Data Sheet: July 2002 Copyright 1994 - 2002 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the information presented may be protected by patent or other rights.
|
Original
|
PDF
|
|
S29GL128S
Abstract: S29GL512S S29GL01GS GL512S S29GL256S GL256S s29gl128s10tfiyyx JESD68-01 GL01GS S29GL01GS11
Text: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet
|
Original
|
PDF
|
S29GL01GS
S29GL512S
S29GL256S
S29GL128S
S29GL128S
GL512S
GL256S
s29gl128s10tfiyyx
JESD68-01
GL01GS
S29GL01GS11
|
JESD97
Abstract: M29DW128F TSOP56 6C80
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
PDF
|
M29DW128F
TSOP56
32-Word
16Mbit
48Mbit
16Mbit
TBGA64
JESD97
M29DW128F
TSOP56
6C80
|
M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
PDF
|
M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
M29W128FL
Memory Protection Devices
M29W128FH
JESD97
M29W128F
TSOP56
|
Q002
Abstract: M29W800FT TFBGA48 TSOP48 outline m29w800f
Text: M29W800FT M29W800FB 8 Mbit 1 Mb x8 or 512 Kb ×16, Boot Block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 70 ns ■ Programming time – 10 µs per Byte/Word typical
|
Original
|
PDF
|
M29W800FT
M29W800FB
64-bit
Q002
M29W800FT
TFBGA48
TSOP48 outline
m29w800f
|
ST M29W800DT
Abstract: M29W800D M29W800DB M29W800DT TFBGA48
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks
|
Original
|
PDF
|
M29W800DT
M29W800DB
512Kb
64-and
ST M29W800DT
M29W800D
M29W800DB
M29W800DT
TFBGA48
|
M29F016D
Abstract: No abstract text available
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
|
Original
|
PDF
|
M29F016D
64Kbyte
TSOP40
M29F016D
|
M29W017D
Abstract: TFBGA48
Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
|
Original
|
PDF
|
M29W017D
TSOP40
TFBGA48
M29W017D
TFBGA48
|
Untitled
Abstract: No abstract text available
Text: A O m r c i ! O M F O K fifflÄ T T O O K I in te l A28F200BR-T/B 2-MBIT 128K x 1 6 ,256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive Intel SmartVoltage Technology — 5V or 12V Program/Erase — 5V Read Operation Very High Performance Read
|
OCR Scan
|
PDF
|
A28F200BR-T/B
x8/x16-Selectable
32-bit
AB28F200BR-B80
AP-363
28F002/200BX-T/B
28F002/200BL-T/B
28F004/400BL-T/B
28F004/400BX-T/B
AB-57
|
intel ab28f200 flash
Abstract: AB28F200 AB28F intel ab28F200
Text: ADVANCE INFORMATION A28F200BR-T/B 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive • Intel SmartVoltage Technology — 5V o r 12V Program/Erase — 5V Read Operation ■ Very High Perform ance Read — 80 ns Max. Access Time,
|
OCR Scan
|
PDF
|
A28F200BR-T/B
x8/x16-Selectable
32-bit
16-KB
96-KB
128-KB
28F002/200B
8F002/200B
8F004/400B
28F004/400B
intel ab28f200 flash
AB28F200
AB28F
intel ab28F200
|
