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    BUZ356

    Abstract: T0218AA BUZ-356
    Contextual Info: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356 PDF