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Text: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits
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Text: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits
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Untitled
Abstract: No abstract text available
Text: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits
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BUJ302AD
Abstract: No abstract text available
Text: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits
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Untitled
Abstract: No abstract text available
Text: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits
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Text: BUJD103AD NPN power transistor with integrated diode Rev. 3 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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HD radio nxp application
Abstract: BUJD203AD
Text: BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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BUJD203AD
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BUJD103AD
Abstract: No abstract text available
Text: BUJD103AD NPN power transistor with integrated diode Rev. 02 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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BUJD103AD
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BUJD105AD
Abstract: No abstract text available
Text: BUJD105AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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Text: BUJD105AD NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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BUJD103AD
Abstract: No abstract text available
Text: BUJD103AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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HD radio nxp application
Abstract: transistor integrated diode BUJD103AD
Text: BUJD103AD NPN power transistor with integrated diode Rev. 3 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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BUJD103AD
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transistor integrated diode
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HD radio nxp application
Abstract: nxp power diode BUJD105AD
Text: BUJD105AD NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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BUJD105AD
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HD radio nxp application
nxp power diode
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Text: BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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ST T4 3580
Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc
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MJD243*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
ST T4 3580
BU108
bdw93c applications
transistor bd136 in dpak packaging
2SC103
ir411
TRANSISTOR BC 384
BDX54
2SB56
IC 714
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Text: A Product Line of Diodes Incorporated Green ZXT690BK 45V NPN HIGH GAIN MEDIUM POWER TRANSISTOR Features Mechanical Data • BVCEO > 45V • Case: TO252 DPAK • IC = 3A high Continuous Collector Current • Case Material: Molded Plastic, "Green" Molding Compound.
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ZXT690BK
J-STD-020
DS31996
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Text: IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS • single P-Channel in DPAK RDS on ,max • Qualified according JEDEC1) for target applications • 175 °C operating temperature -30 V VGS = 10V 6.8 mW VGS = 4.5V 11.0 IDD -70 A • 100% Avalanche tested
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IPD068P03L3
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IEC61249-2-21
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068P03L
Abstract: JESD22 JESD22-A114 PG-TO F70 marking
Text: IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS • single P-Channel in DPAK R DS on ,max • Qualified according JEDEC 1) for target applications • 175 °C operating temperature -30 V V GS = 10V 6.8 mΩ V GS = 4.5V 11.0 I DD -70
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IPD068P03L3
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068P03L
JESD22
JESD22-A114
PG-TO
F70 marking
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ZXT790AK
Abstract: ZXT790AKTC ZXT790A
Text: ZXT790AK 40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power
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ZXT790AK
ZXT790AKTC
ZXT790A
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ZXT790A
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Text: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various
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ZXT1053AK
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522-ZXT1053AKTC
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log sheet air conditioning
Abstract: ZXT849K ZXT849KTC
Text: ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUMMARY BVCEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high performance 30V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits
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ZXT849K
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25oad
log sheet air conditioning
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Text: GLOSSARY OF PACKAGING ABBREVIATIONS CLCC Ceramic Leaded Chip Carrier. Solder sealed, mul tilayer ceramic. COB Chip on Board. CQFP Glass sealed Ceramic Quad Flat Pack with gull wing leads. Also called CERQUAD or CQUAD. CQUAD Same as CQFP. DPAK Small power transistor package for surface mount.
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O-220)
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C 829 transistor
Abstract: No abstract text available
Text: M GTORCLA SC 12E D § k3t72S>l 0085573 5 | X S TR S/ R F T - 3 3 -J 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA T ' 4 ~3l0 MJD148 N P N Silicon Pow er Transistor DPAK For Surface Mount Applications • • • • • • NPN SILICON POWER TRANSISTORS 4 AMPERES
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k3t72S
MJD148
C 829 transistor
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3055E
Abstract: D3055 atech
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is
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3055E
Y145M.
D3055
atech
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