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    DPAK POWER TRANSISTOR OUTLINE Search Results

    DPAK POWER TRANSISTOR OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    DPAK POWER TRANSISTOR OUTLINE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303CD OT428 Condition10

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303AD OT428

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303AD OT428

    BUJ302AD

    Abstract: No abstract text available
    Text: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits


    Original     		PDF BUJ302AD OT428 BUJ302AD

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits


    Original     		PDF BUJ302AD OT428

    Untitled

    Abstract: No abstract text available
    Text: BUJD103AD NPN power transistor with integrated diode Rev. 3 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD103AD OT428

    HD radio nxp application

    Abstract: BUJD203AD
    Text: BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD203AD OT428 HD radio nxp application BUJD203AD

    BUJD103AD

    Abstract: No abstract text available
    Text: BUJD103AD NPN power transistor with integrated diode Rev. 02 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD103AD OT428 BUJD103AD

    BUJD105AD

    Abstract: No abstract text available
    Text: BUJD105AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD105AD OT428 BUJD105AD

    Untitled

    Abstract: No abstract text available
    Text: BUJD105AD NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD105AD OT428

    BUJD103AD

    Abstract: No abstract text available
    Text: BUJD103AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD103AD OT428 BUJD103AD

    HD radio nxp application

    Abstract: transistor integrated diode BUJD103AD
    Text: BUJD103AD NPN power transistor with integrated diode Rev. 3 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD103AD OT428 HD radio nxp application transistor integrated diode BUJD103AD

    HD radio nxp application

    Abstract: nxp power diode BUJD105AD
    Text: BUJD105AD NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD105AD OT428 HD radio nxp application nxp power diode BUJD105AD

    Untitled

    Abstract: No abstract text available
    Text: BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic


    Original     		PDF BUJD203AD OT428

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZXT690BK 45V NPN HIGH GAIN MEDIUM POWER TRANSISTOR Features Mechanical Data • BVCEO > 45V • Case: TO252 DPAK • IC = 3A high Continuous Collector Current • Case Material: Molded Plastic, "Green" Molding Compound.


    Original     		PDF ZXT690BK J-STD-020 DS31996

    Untitled

    Abstract: No abstract text available
    Text: IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS • single P-Channel in DPAK RDS on ,max • Qualified according JEDEC1) for target applications • 175 °C operating temperature -30 V VGS = 10V 6.8 mW VGS = 4.5V 11.0 IDD -70 A • 100% Avalanche tested


    Original     		PDF IPD068P03L3 PG-TO252-3 IEC61249-2-21 068P03L

    068P03L

    Abstract: JESD22 JESD22-A114 PG-TO F70 marking
    Text: IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS • single P-Channel in DPAK R DS on ,max • Qualified according JEDEC 1) for target applications • 175 °C operating temperature -30 V V GS = 10V 6.8 mΩ V GS = 4.5V 11.0 I DD -70


    Original     		PDF IPD068P03L3 PG-TO252-3 068P03L 068P03L JESD22 JESD22-A114 PG-TO F70 marking

    ZXT790AK

    Abstract: ZXT790AKTC ZXT790A
    Text: ZXT790AK 40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power


    Original     		PDF ZXT790AK ZXT790AKTC ZXT790A ZXT790AK ZXT790AKTC ZXT790A

    Untitled

    Abstract: No abstract text available
    Text: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXT1053AK ZXT1053AKTC 522-ZXT1053AKTC ZXT1053AKTC

    log sheet air conditioning

    Abstract: ZXT849K ZXT849KTC
    Text: ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUMMARY BVCEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high performance 30V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXT849K ZXT849KTC 25oad log sheet air conditioning ZXT849K ZXT849KTC

    Untitled

    Abstract: No abstract text available
    Text: GLOSSARY OF PACKAGING ABBREVIATIONS CLCC Ceramic Leaded Chip Carrier. Solder sealed, mul­ tilayer ceramic. COB Chip on Board. CQFP Glass sealed Ceramic Quad Flat Pack with gull wing leads. Also called CERQUAD or CQUAD. CQUAD Same as CQFP. DPAK Small power transistor package for surface mount.


    OCR Scan     		PDF O-220)

    C 829 transistor

    Abstract: No abstract text available
    Text: M GTORCLA SC 12E D § k3t72S>l 0085573 5 | X S TR S/ R F T - 3 3 -J 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA T ' 4 ~3l0 MJD148 N P N Silicon Pow er Transistor DPAK For Surface Mount Applications • • • • • • NPN SILICON POWER TRANSISTORS 4 AMPERES


    OCR Scan     		PDF k3t72S MJD148 C 829 transistor

    3055E

    Abstract: D3055 atech
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is


    OCR Scan     		PDF 3055E Y145M. D3055 atech