Untitled
Abstract: No abstract text available
Text: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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Original
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PDF
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TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
08-Mar-05
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TEMD1000
Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Text: TSMF1000/1020/1030/1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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PDF
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1000
TSMF1020
TSMF1030
TSMF1040
08-Apr-05
TEMD1000
TSMF1020
TSMF1030
TSMF1040
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Untitled
Abstract: No abstract text available
Text: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic
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VSMB1940X01
VSMB1940X01
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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MAX160
Abstract: TSMF4710-GS08 TSMF4710-GS18
Text: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMF4710
TSMF4710
D-74025
08-Mar-05
MAX160
TSMF4710-GS08
TSMF4710-GS18
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Untitled
Abstract: No abstract text available
Text: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic
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Original
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PDF
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VSMB1940X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
VSMB1940X01
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic
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Original
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PDF
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VSMB1940X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
VSMB1940X01
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMF4710
TSMF4710
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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Original
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PDF
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TSMF4710
TSMF4710
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic
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Original
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VSMB1940X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
VSMB1940X01
11-Mar-11
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TSMF3710
Abstract: TSMF3710-GS08 TSMF3710-GS18
Text: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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Original
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TSMF3710
TSMF3710
D-74025
08-Mar-05
TSMF3710-GS08
TSMF3710-GS18
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TSMF3710
Abstract: TSMF3710-GS08 TSMF3710-GS18
Text: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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Original
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PDF
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TSMF3710
TSMF3710
08-Apr-05
TSMF3710-GS08
TSMF3710-GS18
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Untitled
Abstract: No abstract text available
Text: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMF3710
TSMF3710
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSMF3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology in a miniature PL-CC-2 SMD package. It has been designed to meet the increasing demand
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TSMF3700
TSMF3700
08-Apr-05
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VSMB1940X01
Abstract: No abstract text available
Text: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power
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Original
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VSMB1940X01
VSMB1940X01
AEC-Q101
11-Mar-11
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VSMB1940X01
Abstract: J-STD-020
Text: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power
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VSMB1940X01
VSMB1940X01
AEC-Q101
18-Jul-08
J-STD-020
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"rain sensor"
Abstract: rain SENSOR TSRF9000 "Automotive rain sensor" IR rain light sensor TSRF9000-GS44 rain sensor automotive rain light sensor "rain sensor" application
Text: TSRF9000 / 22079857 Vishay Semiconductors IR Rain Sensor Module Description Infrared detector module for automotive rain sensor application. Infrared emitting diodes in GaAlAs on GaAlAs double hetero DH technology in chip on board (COB) assembly technique perform in conjunction with a
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TSRF9000
TSRF9000
TSRF9000-GS44
2207985lectual
18-Jul-08
"rain sensor"
rain SENSOR
"Automotive rain sensor"
IR rain light sensor
rain sensor automotive
rain light sensor
"rain sensor" application
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Hitachi DSA002727
Abstract: No abstract text available
Text: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power
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HE7601SG
HE7601SG
HE7601SG:
Hitachi DSA002727
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HE7601SG
Abstract: No abstract text available
Text: HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B Z Rev.2 Mar. 2005 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
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HE7601SG
ODE-208-996B
HE7601SG
HE7601SG:
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Untitled
Abstract: No abstract text available
Text: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power
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HE7601SG
HE7601SG
HE7601SG:
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HE7601SG
Abstract: a 770 C-239
Text: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power
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HE7601SG
HE7601SG
a 770
C-239
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Untitled
Abstract: No abstract text available
Text: HE7601SG ODE2059-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
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HE7601SG
HE7601SG
ODE2059-00
HE7601SG:
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Hitachi DSA0087
Abstract: HE7601SG
Text: HE7601SG GaAlAs Infrared Emitting Diode ADE-208-996 Z 1st Edition Dec. 2000 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
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HE7601SG
ADE-208-996
HE7601SG
HE7601SG:
Hitachi DSA0087
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Untitled
Abstract: No abstract text available
Text: Infrared Emitting Diode Description The H E7601SG is a 770 nm band GaAIAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
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OCR Scan
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E7601SG
HE7601SG:
HE7601SG
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