Untitled
Abstract: No abstract text available
Text: STB33N60M2 N-channel 600 V, 0.090 Ω typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK package Datasheet - preliminary data Features TAB Order code VDS @ TJmax RDS on max ID STB33N60M2 650 V 0.120 Ω 27 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation
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Original
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PDF
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STB33N60M2
AM15572v1
DocID025253
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33N60
Abstract: No abstract text available
Text: STB33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID STB33N60M2 650 V 0.125 Ω 26 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation
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Original
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PDF
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STB33N60M2
AM15572v1
DocID025253
33N60
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