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    DO214BA GENERAL SEMICONDUCTOR Search Results

    DO214BA GENERAL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DO214BA GENERAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DO214BA

    Abstract: DO-214BA DO-214B do214ba general semiconductor
    Text: EGF1T New Product Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 1300 V IFSM 20 A trr 75 ns EAS 15 mJ Tj max. 150 °C d* e t n Pate * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19500 J-STD-020C DO-214B0 12-Aug-05 DO214BA DO-214BA DO-214B do214ba general semiconductor

    DO-214BA

    Abstract: No abstract text available
    Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat


    Original     		PDF DO-214BA MIL-S-19500 10-Aug-05 DO-214BA

    DO-214BA

    Abstract: DO214BA JESD22-B102D J-STD-002B
    Text: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF MIL-S-19500 J-STD-020C, DO-214BA 2002/95/EC 2002/96/EC 26-Jun-06 DO-214BA DO214BA JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: EGF1T www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ideal for automated placement


    Original     		PDF MIL-S-19500 J-STD-020, DO-214BA AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: EGF1T New Product Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC DO-214BA 08-Apr-05

    marking code gb

    Abstract: DO-214BA JESD22-B102D J-STD-002B GF1J-E3
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		PDF MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code gb DO-214BA JESD22-B102D J-STD-002B GF1J-E3

    diode ed 5ca

    Abstract: No abstract text available
    Text: EGF1A, EGF1B, EGF1C, EGF1D www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ideal for automated placement


    Original     		PDF J-STD-020, DO-214BA AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 diode ed 5ca

    mini-melf with red band

    Abstract: GENERAL SEMICONDUCTOR diodes marking code rb
    Text: 1/2 MEDIUM POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,600V AND 1A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 1A • SURGE OVERLOAD RATING EITHER 10A OR 30A • RECTIFIER DIODES ARE PART OF GENERAL SEMICONDUCTOR’S UNIQUE ‘SUPERECTIFIER’ RANGE:


    Original     		PDF EGL41F EGL41G mini-melf with red band GENERAL SEMICONDUCTOR diodes marking code rb

    code 67a

    Abstract: No abstract text available
    Text: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 code 67a

    GF1G

    Abstract: DO-214BA JESD22-B102D J-STD-002B
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19ed 08-Apr-05 GF1G DO-214BA JESD22-B102D J-STD-002B

    GF1G

    Abstract: gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		PDF MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 GF1G gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b

    GF1M

    Abstract: GF1J vishay
    Text: GF1A thru GF1M Vishay Semiconductors Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19500 J-STD-020C 04-Jul-05 GF1M GF1J vishay

    DO-214BA

    Abstract: JESD22-B102D J-STD-002B VISHAY MARKING RJ
    Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat


    Original     		PDF DO-214BA 08-Apr-05 DO-214BA JESD22-B102D J-STD-002B VISHAY MARKING RJ

    GF1G

    Abstract: gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		PDF MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-214BA 18-Jul-08 GF1G gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM

    88579

    Abstract: No abstract text available
    Text: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 1.0 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19500 J-STD-020C DO-214 15-Aug-05 88579

    DO-214BA

    Abstract: JESD22-B102D J-STD-002B GENERAL SEMICONDUCTOR MARKING RJ 06 DO214BA
    Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		PDF MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DO-214BA JESD22-B102D J-STD-002B GENERAL SEMICONDUCTOR MARKING RJ 06 DO214BA

    GF1G

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19500 J-STD-020C 10-Aug-05 GF1G

    DO-214BA

    Abstract: JESD22-B102 J-STD-002 code 67a DO214BA
    Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		PDF MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC 18-Jul-08 DO-214BA JESD22-B102 J-STD-002 code 67a DO214BA

    marking code 67A

    Abstract: code 67a
    Text: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time


    Original     		PDF MIL-S-19500 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214BA 18-Jul-08 marking code 67A code 67a

    DO-214BA

    Abstract: EGF1T EGF1THE3/67A JESD22-B102D J-STD-002B DO214BA DO214BAGF1
    Text: New Product EGF1T Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DO-214BA EGF1T EGF1THE3/67A JESD22-B102D J-STD-002B DO214BA DO214BAGF1

    DO214BA

    Abstract: DO-214BA RGF1K JESD22-B102D J-STD-002B DO214BAGF1 RGF1M rgf1a
    Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		PDF MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DO214BA DO-214BA RGF1K JESD22-B102D J-STD-002B DO214BAGF1 RGF1M rgf1a

    code 67a

    Abstract: No abstract text available
    Text: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-214BA, 08-Apr-05 code 67a

    EGF1DHE3

    Abstract: DO214BA VISHAY MARKING ED VISHAY diode MARKING ED DO-214BA JESD22-B102 J-STD-002
    Text: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF MIL-S-19500 J-STD-020, DO-214BA 2002/95/EC 2002/96/EC 18-Jul-08 EGF1DHE3 DO214BA VISHAY MARKING ED VISHAY diode MARKING ED DO-214BA JESD22-B102 J-STD-002

    DO214BA

    Abstract: EGF1T-E3 DO-214BA JESD22-B102 J-STD-002
    Text: New Product EGF1T Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		PDF MIL-S-19500 DO-214BA J-STD-020, 2002/95/EC 2002/96/EC 18-Jul-08 DO214BA EGF1T-E3 DO-214BA JESD22-B102 J-STD-002