Untitled
Abstract: No abstract text available
Text: DATA SHEET BAV21 FAST SWITCHING DIODES VOLTAGE 200 Volts POWER 500mWatts DO-34/DO-35 Unit: inch mm FEATURES DO-34 .017(0.42)TYP. 1.02(26.0)MIN. • Fast switching Speed. • Electrically ldentical to Standerd JEDEC • High Conductance DO-34 .106(2.9)MAX.
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BAV21
500mWatts
DO-34/DO-35
DO-34
DO-35
DO-34
DO-35
BAV21
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Untitled
Abstract: No abstract text available
Text: BZX55C* 500mW Zener Diodes FEATURES 500mW,DO-35 . BZX55C. series is for 500mW,DO 35 or DO-34 DO 34 package . Zener voltage regulator diodes . Hermetically sealed glass silicon zener diodes . complete voltage range_2.7 to 75volts We declare that the material of product
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BZX55C*
500mW
BZX55C.
DO-34
DO-35
75volts
100mA
DO-35
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SCS133MT
Abstract: No abstract text available
Text: SCS133MT 0.15A , 80V Hermetically Sealed Glass Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DO-34 FEATURES Fast Switching Device TRR <4.0 nS DO-34 Package (JEDEC DO-204)
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SCS133MT
DO-34
DO-34
DO-204)
500nA
100mA
21-Mar-2013
SCS133MT
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JEDEC do-204
Abstract: 1N4448M 1N4148M do-204 1N914BM
Text: 1N4148M/1N4448M/1N914BM Pb 300mW Hermetically Sealed Glass Fast Switching Diode RoHS COMPLIANCE DO-34 Features Fast switching device TRR<4.0nS DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass
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1N4148M/1N4448M/1N914BM
300mW
DO-34
DO-34
DO-204)
1N4448M,
1N914BM
1N4148M
JEDEC do-204
1N4448M
1N4148M
do-204
1N914BM
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1ss133m
Abstract: No abstract text available
Text: 1SS133M Pb 300mW Hermetically Sealed Glass Switching Diode RoHS COMPLIANCE DO-34 Features Fast switching device TRR<4.0nS DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass Compression bonded construction
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1SS133M
300mW
DO-34
DO-34
DO-204)
1/10IR
1SS133M)
1ss133m
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1ss133m
Abstract: do-204
Text: 1SS133M Pb 300mW Hermetically Sealed Glass Switching Diode RoHS COMPLIANCE DO-34 Features Fast switching device TRR<4.0nS DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass Compression bonded construction
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1SS133M
300mW
DO-34
DO-34
DO-204)
1/10IR
1SS133M)
1ss133m
do-204
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MTZJ 188
Abstract: MTZJ24V diodes zener 33,64 MTZJ SERIES ZENER DIODES MTZJ11V
Text: MTZJ SERIES Pb RoHS COMPLIANCE 500mW Hermetically Sealed Glass Zener Diodes DO-34 Features Zener voltage range 2.0 to 39 volts DO-34 package JEDEC DO-204 Through-hole device type mounting Hermetically sealed glass Compression bonded construction
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500mW
DO-34
DO-34
DO-204)
MTZJ 188
MTZJ24V
diodes zener 33,64
MTZJ SERIES ZENER DIODES
MTZJ11V
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mtzj 220
Abstract: No abstract text available
Text: MTZJ SERIES Pb RoHS COMPLIANCE 500mW Hermetically Sealed Glass Zener Diodes DO-34 Features Zener voltage range 2.0 to 39 volts DO-34 package JEDEC DO-204 Through-hole device type mounting Hermetically sealed glass Compression bonded construction
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500mW
DO-34
DO-34
DO-204)
mtzj 220
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MTZJ SERIES ZENER DIODES
Abstract: diode zener mtz MTZJ 188 MTZJ MTZJ10 MTZJ11 MTZJ12 MTZJ13 MTZJ15 MTZJ16
Text: MTZJ SERIES Pb RoHS COMPLIANCE 500mW Hermetically Sealed Glass Zener Diodes DO-34 Features Zener voltage range 2.0 to 39 volts DO-34 package JEDEC DO-204 Through-hole device type mounting Hermetically sealed glass Compression bonded construction
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500mW
DO-34
DO-34
DO-204)
MTZJ SERIES ZENER DIODES
diode zener mtz
MTZJ 188
MTZJ
MTZJ10
MTZJ11
MTZJ12
MTZJ13
MTZJ15
MTZJ16
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1N4148 Fast Switching Diode
Abstract: No abstract text available
Text: 1N4148/1N4448 DO-34 High-speed switching diode Features 1. High reliability 2. High speed (trr≤4 ns) 3. DO-34 Package Applications Extreme fast switches Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM
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1N4148/1N4448
DO-34)
DO-34
1-Sep-2009
DO-34
1N4148 Fast Switching Diode
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Untitled
Abstract: No abstract text available
Text: 1N4148/1N4448 DO-34 High-speed switching diode Features 1. High reliability 2. High speed (trr≤4 ns) 3. DO-34 Package Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol
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1N4148/1N4448
DO-34)
DO-34
1-Jan-2006
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RD10JS
Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
Text: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing
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RD39JS
DO-34
DO-34;
RD39JS
RD10JS
RD11JS
RD12JS
RD13JS
RD15JS
RD16JS
2JS marking
NEC RD4.7JS
RD5.1JS
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GDZJ
Abstract: GDZJ56
Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-34/DO-35 500 mWatts POWER Unit: inch mm FEATURES DO-34 .017(0.42)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes
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GDZJ56
DO-34/DO-35
DO-34
500mW
DO-35
DO-35
MIL-STD-202,
GDZJ
GDZJ56
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zener 6c
Abstract: GDZ56 8A220 Zener 13A
Text: DATA SHEET GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-34/DO-35 500 mWatts POWER Unit: inch mm FEATURES DO-34 .017(0.42)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes
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GDZ56
DO-34/DO-35
DO-34
500mW
DO-35
DO-35
MIL-STD-202,
zener 6c
GDZ56
8A220
Zener 13A
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NEC C 324 C
Abstract: marking 222 zener diode MARKING AB2 zener diode ab RD10ES2 7es marking NEC zener diode 35 series RD11ES zener rd9.1esb2 RD15ES
Text: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.
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RD39ES
DO-34)
RD39ES
DO-34
DO-34
NEC C 324 C
marking 222 zener diode
MARKING AB2
zener diode ab
RD10ES2
7es marking
NEC zener diode 35 series
RD11ES
zener rd9.1esb2
RD15ES
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BAW76
Abstract: BAW76M LLBAW76
Text: SynSEMi 5YH5EMI SEMICONDUCTOR_ BAW76 BAW76M LLBAW76 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAW76 Device Electrical Characteristics
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BAW76
BAW76M
LLBAW76
LL-34
100mA
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BAY71
Abstract: LLBAY71
Text: SynSEMi 5YH5EMI SEMICONDUCTOR_ BAY71 BAY71M LLBAY71 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAY71 Device Electrical Characteristics
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AY71M
LLBAY71
LL-34
BAY71
100pA
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IR5 20v
Abstract: BAW62 BAW62M LLBAW62
Text: SynSEMi 5YN5EMI SEMICONDUCTOR_ BAW62 BAW62M LLBAW62 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAW62 Device Electrical Characteristics
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BAW62
BAW62M
LLBAW62
LL-34
100mA
IR5 20v
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode DO-34 Glass Package 1N4534 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features DO-34 Glass Package • Six sigma quality • Metallurgical^ bonded
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1N4534
DO-34
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1N916
Abstract: 1N916M LL916
Text: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N916 1N916M LL916 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics Symbol t a = 25°c unless otherwise noted.) Parameter Lim its Test C ondition
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1N916
1N916M
LL916
LL-34
100pA
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1N4154
Abstract: 1N4154M LL4154
Text: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4154 1N4154M LL4154 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics Symbol t a = 25°c unless otherwise noted.) Parameter Lim its Test C ondition
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1N4154
1N4154M
LL4154
LL-34
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Ic 9148
Abstract: IC 4614 1N4680 J 1N4679 U 4614 B 1N4615-1
Text: Microsemi Zener Regulator Diodes P art N um ber i M icrosem i D ivision W atertow n JAN1N4531 W atertow n JAN TX1N 4531 JAN TXV1N 4531_ W atertow n Package O utline Type Mil Spec DO-34 STD 116 DO-34 STD 116 PO -34 STD 116 P o w er ¡ V z Data Sheet ID
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DO-34
DO-35
-213AA
Ic 9148
IC 4614
1N4680
J 1N4679
U 4614 B
1N4615-1
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MBG453
Abstract: S0068 BAS15
Text: Philips Semiconductors Product specification High-speed diode BAS15 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD68 DO-34 package The BAS15 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34)
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BAS15
DO-34)
BAS15
MAM156
MBG453
S0068
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LL4447
Abstract: 1N4447 1N4447M
Text: S yn S E M i 5YM5EMI 5EMIC0HDUCT0R_ 1N4447 1N4447M LL4447 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics Symbol t a = 25°c unless otherwise noted.) Parameter Lim its Test Condition
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1N4447
1N4447M
LL4447
LL-34
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