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    DO-12 PACKAGE Search Results

    DO-12 PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    DO-12 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sm58a

    Abstract: DO215AA EIA 481-C RGP10E DO-221
    Text: Packaging Information www.vishay.com Vishay General Semiconductor Packaging Information PACKAGING ORDERING CODE PREFERRED ANTI-STATIC PACKAGE CODE PACKAGE CODE 51 PACKAGING DESCRIPTION Bulk 52, 52T P DO-214AA SMB /DO-215AA (SMBG), 12 mm tape, 7" diameter plastic reel


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    PDF DO-214AA /DO-215AA DO-218AB DO-218AB, 481-C 08-Aug-12 sm58a DO215AA EIA 481-C RGP10E DO-221

    Untitled

    Abstract: No abstract text available
    Text: Packaging Information www.vishay.com Vishay General Semiconductor Packaging Information PACKAGING ORDERING CODE ANTI-STATIC PREFERRED PACKAGE CODE PACKAGE CODE 51 PACKAGING DESCRIPTION Bulk 52, 52T P DO-214AA SMB /DO-215AA (SMBG), 12 mm tape, 7" diameter plastic reel


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    PDF DO-214AA /DO-215AA DO-218AB DO-218AB, 481-C 02-Mar-15

    TO-208AA

    Abstract: DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1
    Text: 2015-2012:QuarkCatalogTempNew 9/20/12 5:44 PM Page 2015 25 Diodes, Thyristors and Insulated Gate Bipolar Transistors IGBT 80-90 Amp RoHS DO-203AB (DO-5) INT-A-Pak VFM @ 25°C VRRM @ TC (°C) Package EACH 70079025 70078671 70078674 70078774 70078771 70078775


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    PDF DO-204AR O-247AC DO-203AB 80SQ045 80EPS12PBF TO-208AA DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1

    Untitled

    Abstract: No abstract text available
    Text: HVGT HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage DO-415 diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. Features


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    PDF HV37-12 300mA HV37-12 DO-415

    Untitled

    Abstract: No abstract text available
    Text: DO-34 #3008 3-10-97 1/27/99 1:12 PM Page 1 PR Transient Voltage Suppressor Axial Lead ESD Protection Bussmann DO-34 transient voltage suppressors provide electrostatic discharge (ESD) protection in telecom, data processing, and many other applications. Properly applied, this


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    PDF DO-34 DO-34

    CT10

    Abstract: DKV6510-12
    Text: DKV6510-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6510-12 is an Ion Implanted Silicon Hyperabrupt Varactor Diode Designed for Octave Tuning up to 500 MHz. FEATURES INCLUDE: PACKAGE STYLE DO-7 • Large Tuning Ratio – 14:1 Typ. • High Q – 700 Typ.


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    PDF DKV6510-12 DKV6510-12 CT10

    Untitled

    Abstract: No abstract text available
    Text: 4 PART NO. 3 2 1 REVISIONS CA-XXDHDSR-11-X LTR A B C D DESCRIPTION INITIAL RELEASE SEE DO 3951 SEE DO 4011 SEE DO 6644 DATE 4-4-00 5-12-00 4-25-08 CLW CLW CP APPROVED A.J. A.J. A.J. D A B CONTACT 1 C 5.9 .23 7.9 .31 CA-XXDHDSR-11-X NUMBER OF CONTACT POS 12.5


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    PDF CA-XXDHDSR-11-X

    3528 LED warm white

    Abstract: smd 3528 white 3528 LED smd 3528 led SMD led 3528 LED white SMD 3528 Smd 3528 heat generation led SMD 3528 NS3528WHEA-B1BP 000 smd diode ED
    Text: 3528 Flash White Color SMD Type LED 3528 Size Flash White Color SMD Type LED Part Number : S3528WH-EA 2004. 12. 7 Composition Check Approval / / / / / / NiNEX NiNEX Co., Ltd. http://www.ninex.biz Head Quarter/ Factory: #449-12, Mogok-Dong, PyongTaek-Si, Kyongki-Do, Korea


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    PDF S3528WH-EA NS-120 3528 LED warm white smd 3528 white 3528 LED smd 3528 led SMD led 3528 LED white SMD 3528 Smd 3528 heat generation led SMD 3528 NS3528WHEA-B1BP 000 smd diode ED

    Untitled

    Abstract: No abstract text available
    Text: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Short Form Data Sheet DO-9 package 16.5 0.66" Part num ber schem e DO-9 K 41 N 12 KNX 8.5 (0.33") 3.3 (5/32") 1 11 ! 0.5 (7/16") 210 ! 5 (8.33") X X X X 5 6 Black Silicone Rubber Sleeve All diffused silicone.


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    PDF

    1N750

    Abstract: 1N751 1N752 1N753 1N759 1N746 1N747 1N748 1N749 1n746 cdil
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON ZENER DIODES 1N746 to 1N759 DO-35 400mW Hermetically Sealed Glass Package Zener Diodes ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT ZV 3.3 to 12 V Zener Voltage


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    PDF ISO/TS16949 1N746 1N759 DO-35 400mW 200mA C-120 1N750 1N751 1N752 1N753 1N759 1N747 1N748 1N749 1n746 cdil

    PWQN0024KC-A

    Abstract: No abstract text available
    Text: JEITA Package Code P-HWQFN24-4x4-0.50 RENESAS Code PWQN0024KC-A Previous Code 24PJS-A MASS[Typ.] 0.03g *1 D 18 13 19 13 12 18 19 12 *2 E1 E D2 7 24 7 NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. ZE 24 1 6 6 F 1 e Lp bp Reference Symbol ZD x M


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    PDF P-HWQFN24-4x4-0 PWQN0024KC-A 24PJS-A PWQN0024KC-A

    SOT-227 Package

    Abstract: Barksdale newark Sirectifier ITO-220
    Text: E L E C T R O N I C Our Package January 2007 /Rev. 2 SOD-523 SOT-23 SOT-323 SOT-363 SOT-563 SOT-23-6 SMA SMB SMC DO-41 DO-201AD TO-126 TO-92 D-PAK D2-PAK TO-220 ITO-220 Fig. 9 Fig. 10 Fig. 12 Fig. 17 Fig. 14 Fig. 15 TO-247/ TO-3P Fig. 16 SOT-227 Sirectifier Global Corp., Delaware, U.S.A.


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    PDF OD-523 OT-23 OT-323 OT-363 OT-563 OT-23-6 DO-41 DO-201AD O-126 O-220 SOT-227 Package Barksdale newark Sirectifier ITO-220

    Untitled

    Abstract: No abstract text available
    Text: 1N1202A/RA SILICON RECTIFIER DESCRIPTION: The 1N1202A/RA is a Medium Current Rectifiers Designed for General Purpose Power Supply Applications. PACKAGE STYLE DO- 4 • 1N1202A = Anode to Stud • 1N1202RA = Cathode to Stud MAXIMUM RATINGS IO 12 A @TC = 150 °C


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    PDF 1N1202A/RA 1N1202A/RA 1N1202A 1N1202RA

    REJ03G0236-0700

    Abstract: No abstract text available
    Text: HZ-P Series Silicon Planar Zener Diode for Voltage Controller & Voltage Limiter REJ03G0236-0700 Rev.7.00 Nov 12, 2007 Features • Wide zener voltage range from 1.88 V through 40 V provide flexible application. • Glass package DO-41 structure ensures high reliability.


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    PDF REJ03G0236-0700 DO-41 GRZZ0002ZA-A

    BA682-GS08

    Abstract: TSOP2256 bat41 600 1n5625gpe3 TSOP2136 BYV26CTR TSOP2236 bat54c-v-gs08 TSOP4856 LL4148 SOT
    Text: 2014-2012:QuarkCatalogTempNew 9/11/12 9:36 AM Page 2014 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Diodes, Receivers and Rectifiers Small Signal Diodes 5-V Infrared Receivers RoHS DO-35 Package Stock No. Mfr.’s Type VRRM V IF (mA) IR @ 75 VR (µA) trr


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    PDF DO-35 1N914 1N4148 1N4448 BAT41 BAT85S BAT86 BAV21-TR SD101C SD103A BA682-GS08 TSOP2256 bat41 600 1n5625gpe3 TSOP2136 BYV26CTR TSOP2236 bat54c-v-gs08 TSOP4856 LL4148 SOT

    SV 045

    Abstract: DN961 DNB61 DNB64 DN664
    Text: /IT SGS-THOMSON raoœmiOT «! GENERAL PURPOSE & INDUSTRIAL ^ 7# HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779b CB-450 STANDARD RECTIFIER DIODEES Type See note Package 0.23 0.23 12-15 12-15 DO 8 0.6 0.16 30-15 DO 9 1 0.6 0.1 0.07 3.5 ± 10 %


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    PDF CB-450 CB-486 DNB64 DNB61 SV 045 DN961 DN664

    SRA255

    Abstract: No abstract text available
    Text: MCC 12 AMPERE I DO-4 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A 50 100 200 400 600 800 1000 Package Outline Pg. A-9 12 12 12 12 12 12 12 150 150 150 150 150 150 150 240 240 240 240 240 240 240 3000 2500 2000 1500 1000 1000 1000 1.35 1.35 1.35


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    PDF 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A MR2400 MR2401 MR2402 SRA255

    DO-213AB MELF

    Abstract: 12MMTAPE
    Text: PACKAGING DATA Surface Mount Products BULK PACK QUANTITY PER CONTAINER PACKAGE PLASTIC BAGS VIALS DO-213AA MELF, LL34,SOD-80 5,000 500 DO-213AB (MELF, LL41) 5,000 500 TAPE & REEL PACKAGE TAPE WIDTH (MM) REEL SIZE (INCHES) 7 2,000 8 13 10,000 7 1,500 12 13


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    PDF DO-213AA OD-80) DO-213AB DC-213AA DO-213AB MELF 12MMTAPE

    D0213AB

    Abstract: DO-213AB MELF D0213-AB
    Text: PACKAGING DATA Surface Mount Products BULK PACK PACKAGE QUANTITY PER CONTAINER PLASTIC BAGS VIALS DO-213AA MELF, LL34,SOD-80 5,000 500 DO-213AB (MELF, LL41) 5,000 500 TAPE & REEL PACKAGE TAPE WIDTH (MM) REEL SIZE (INCHES) 7 2,000 8 13 10,000 7 1,500 12 13


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    PDF DO-213AA OD-80) DO-213AB DC-213AA CDLL5822) D0213AB) 12MMTAPE D0213AB DO-213AB MELF D0213-AB

    ASP-21981-03

    Abstract: No abstract text available
    Text: ASP-21981-03 NOTES: 1. 2 0 0 ' -.015 J-.010 1. USE T S M -50-D H U BODY. 2. DO NOT FILL POSITIONS 2, 3, 5, 6, 8, 9, 11, 12, 14, 15, 17, 18, 20, 21 AND 24. 12 POS x .100 = FILLED 02 06 08 12 14 18 20 3. PARTS TO BE LAYER PACKAGED. 4. <C> REPRESENTS A CRITICAL DIMENSION.


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    PDF ASP-21981-03 -50-D ASP-21981-03

    ASP-18333

    Abstract: ASP-183
    Text: A SP -18333-03 NOTES: 1. DO NOT FILL POSITIONS 03, 04, 07, 08, 09, 10, 11, 12, 13, 14 & 15. 2. PARTS TO BE BULK PACKAGED. 1. 0 0 0 ± 10 POSITIONS x .100 04 08 10 12 14 FILLED 00 REF .200 REF UNFILLED 03 07 09 11 13 15 IN —PROCESS 1 -.025 SQ REF — r


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    PDF TSW-50-D T-1S6--09 B10-540-4085 ASP-18333-03 ASP-18333 ASP-183

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C14531B 12-B it Parity Tree L SUFFIX CERAMIC CASE 620 The MC14531B 12 -b it parity tree is constructed with MOS P -channel and N -channel enhancem ent mode devices in a single monolithic structure. The circuit consists of 12 d a ta -b it inputs DO thru D11 , and even or odd parity


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    PDF C14531B MC14531B 12-bits MC14531B/D

    MC14531B

    Abstract: MC14XXXBCL MC14XXXBCP MC14XXXBD
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M C14531B 12-Bit Parity Tree L SUFFIX CERAM IC CASE 620 The MC14531B 12 -b it parity tree is constructed with MOS P -channel and N -channel enhancement mode devices in a single monolithic structure. The circuit consists of 12 d a ta -b it inputs DO thru D11 , and even or odd parity


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    PDF MC14531B 12-Bit MC14531B MC14531B/D MC14531B/D MC14XXXBCL MC14XXXBCP MC14XXXBD

    a38a

    Abstract: No abstract text available
    Text: 1N3673A/RA asii SILICON RECTIFIER DESCRIPTION: The 1N3673A/RA is a Medium Current Rectifier for General Purpose Power Supply Applications. • 1N3673A = Anode to Stud • 1N3673RA = Cathode to Stud PACKAGE STYLE DO- 4 MAXIMUM RATINGS 12 A Io AVG @ Te = 15O 0C


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    PDF 1N3673A/RA 1N3673A/RA 1N3673A 1N3673RA a38a