Untitled
Abstract: No abstract text available
Text: L6207Q DMOS dual full bridge driver Datasheet - production data Description The L6207Q device is a DMOS dual full bridge driver designed for motor control applications, realized in BCDmultipower technology, which combines isolated DMOS power transistors with
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L6207Q
L6207Q
VFQFPN48
DocID018993
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DN3145
Abstract: DN3145N8 DATE CODE FOR SUPERTEX
Text: DN3145 Initial Release N-Channel Depletion-Mode Vertical DMOS FETs Features Advanced DMOS Technology ❏ High input impedance These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces
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DN3145
100mA,
100mA
DN3145
DN3145N8
DATE CODE FOR SUPERTEX
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DN2640
Abstract: DN2640N3 DN2640ND
Text: DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven
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DN2640
300mA
DN2640N3
DN2640ND
200mA,
200mA
DN2640
DN2640N3
DN2640ND
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TN0702N3
Abstract: TN0702
Text: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
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TN0702
TN0702N3
500mA
200pF
TN0702N3
TN0702
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DN2640
Abstract: DN2640N3 DN2640ND
Text: – E T E L O S B O – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven
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DN2640
300mA
DN2640N3
DN2640ND
200mA,
200mA
DN2640
DN2640N3
DN2640ND
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Untitled
Abstract: No abstract text available
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing
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TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
NR041105
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Untitled
Abstract: No abstract text available
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing
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TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
NR011905
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voltage drop circuit from 220V to 10V
Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This
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TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
A042005
voltage drop circuit from 220V to 10V
SOT89 FET marking
diode p3c
TP5322
TP5322K1
TP5322K1-G
TP5322N8
FAST DMOS FET Switches
MOS P-Channel SOT23
fet sot-89 marking code
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D4710
Abstract: No abstract text available
Text: 100MHz CMOS/DMOS Wideband Quad Analog Switch CORPORATION CWB201 FEATURES DESCRIPTION APPLICATIONS Designed for RF and Video Switching the CWB201 is manufactured using Calogic’s high speed CMOS combined with DMOS transistors in a monolithic design resulting in
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100MHz
CWB201
CWB201
100MHz
D4710
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DN5m
Abstract: sot-89 marking dn
Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
A090908
DN5m
sot-89 marking dn
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125OC
Abstract: TN1504 TN1504NW TN1506 TN1506NW TN1510 TN1510NW
Text: TN1504/TN1506/TN1510 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► General Description These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s
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TN1504/TN1506/TN1510
500mA
250mA
DSFP-TN1504/TN1506/TN1510
125OC
TN1504
TN1504NW
TN1506
TN1506NW
TN1510
TN1510NW
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PDF
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Untitled
Abstract: No abstract text available
Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3545
DSFP-DN3545
A071806
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FAST DMOS FET Switches n-CHANNEL
Abstract: fet free mos 926 FAST DMOS FET Switches p-CHANNEL VC0106 FAST DMOS FET Switches FET P-Channel Switch P-Channel Enhancement FET P-Channel Enhancement Mode Vertical DMOS FET VC0106N6
Text: VC0106 Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) Q1 + Q2 or Q3 + Q4 60V 11Ω Order Number / Package 14-Pin P-Dip VC0106N6 Features Advanced DMOS Technology • 4 independent channels These enhancement-mode (normally-off) DMOS FET arrays
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VC0106
14-Pin
VC0106N6
FAST DMOS FET Switches n-CHANNEL
fet free
mos 926
FAST DMOS FET Switches p-CHANNEL
VC0106
FAST DMOS FET Switches
FET P-Channel Switch
P-Channel Enhancement FET
P-Channel Enhancement Mode Vertical DMOS FET
VC0106N6
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DN3545N8-G
Abstract: DN3545 DN3545N3 DN3545N3-G DN3545N8
Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3545
O-243AA
OT-89)
DSFP-DN3545
A012207
DN3545N8-G
DN3545
DN3545N3
DN3545N3-G
DN3545N8
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DSFP-DN3545
Abstract: No abstract text available
Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3545
DN3545
O-243AA
OT-89)
DSFP-DN3545
A111006
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DN5MW
Abstract: DN3545 DN3545N3-G DN3545N8-G 10W010
Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
A103108
DN5MW
DN3545
DN3545N3-G
DN3545N8-G
10W010
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VN3205N6
Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination
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VN3205
MS-001,
DSFP-VN3205
A071607
VN3205N6
diode marking CODE VN G1
vn2lw
SOT89 MARKING CODE 43
diode marking CODE VN S2
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siemens fet to92
Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
B052009
siemens fet to92
dn5mw
125OC
DN3545
DN3545N3-G
DN3545N8-G
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mos die
Abstract: DN2624 DN2624N3 DN2624ND
Text: DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 Die 240V 4.0Ω 600mA DN2624N3 DN2624ND Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors
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DN2624
600mA
DN2624N3
DN2624ND
mos die
DN2624
DN2624N3
DN2624ND
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IN4625
Abstract: TN2540N8 TP2640N3 P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage MOSFET 400V LND150N3
Text: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the
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AN-D27
TN2540N8
125pF
LND150N3
IN4625
IN4625
TN2540N8
TP2640N3
P-Channel Depletion-Mode
N-Channel Depletion-Mode MOSFET high voltage
MOSFET 400V
LND150N3
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MOSFET 400V
Abstract: P-Channel Depletion-Mode 400v p-channel mosfet depletion 400V power mosfet Depletion MOSFET depletion power MOSFET 400V P-Channel mosfet 400v P-channel mosfet 500V mosfet transistors low voltage
Text: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the
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AN-D27
TN2540N8
125pF
LND150N3
IN4625
MOSFET 400V
P-Channel Depletion-Mode
400v p-channel mosfet
depletion 400V power mosfet
Depletion MOSFET
depletion power MOSFET 400V
P-Channel mosfet 400v
P-channel mosfet 500V
mosfet transistors low voltage
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DN5MW
Abstract: DN3545 DN3545N3-G DN3545N8-G
Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
B051909
DN5MW
DN3545
DN3545N3-G
DN3545N8-G
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2N6661
Abstract: No abstract text available
Text: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics
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2N6661
2N6661
com/2n6661
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transistor s70
Abstract: Marking S70 pin
Text: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage
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OCR Scan
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BS108
BS123
BS170
2N7000
O-236
BS850
transistor s70
Marking S70 pin
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PDF
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