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    A17S

    Abstract: No abstract text available
    Text: S DM40N02 S amHop Microelectronics C orp. May ,2004 ver 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 44 @ V G S = 4.5V


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    PDF DM40N02 300us A17S