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    Dawin Electronics Co Ltd DM2G200SH12AE

    High Power SPT+ and Lugged Type IGBT Module Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA DM2G200SH12AE 12
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    Dawin Electronics Co Ltd DM2G200SH12A

    High Power SPT+ and Lugged Type IGBT Module Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA DM2G200SH12A 7
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    DM2G200SH12AE

    Abstract: igbt 200 smps 1200v FOR INDUCTION HEATING dm2g200sh12a IGBT 200A 1200V dm2g200
    Text: D W DAWIN Electronics TM DM2G200SH12AE May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.


    Original     		PDF DM2G200SH12AE DM2G200SH12AE igbt 200 smps 1200v FOR INDUCTION HEATING dm2g200sh12a IGBT 200A 1200V dm2g200

    dm2g200sh12a

    Abstract: No abstract text available
    Text: DM2G200SH12A May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G200SH12A dm2g200sh12a

    DM2G200SH6N

    Abstract: No abstract text available
    Text: D W DAWIN Electronics TM DM2G200SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.


    Original     		PDF DM2G200SH6N DM2G200SH6N