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    DM T 96 10A 250V Search Results

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    HAT2192WP-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 10A 230Mohm Wpak Visit Renesas Electronics Corporation

    DM T 96 10A 250V Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MCOTS-F-28-P-DM Passive Filter Demi-Brick -40V to +40V Continuous Input MILITARY COTS EMI FILTER 10A Output Current 60mΩ @ 100°C >80dB @ 500kHz Max. DC Resistance Differential Attenuation a pu d bl va ic n at ce io d n FULL POWER OPERATION: -55ºC to +100ºC


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    PDF MCOTS-F-28-P-DM 500kHz

    Untitled

    Abstract: No abstract text available
    Text: MCOTS-F-28-P-DM Passive Filter Demi-Brick -40V to +40V Continuous Input MILITARY COTS EMI FILTER 10A Output Current 60mΩ @ 100°C >80dB @ 500kHz Max. DC Resistance Differential Attenuation FULL POWER OPERATION: -55ºC to +100ºC The Mil-COTS series of EMI filters brings SynQor’s field


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    PDF MCOTS-F-28-P-DM 500kHz

    irfp23n50

    Abstract: No abstract text available
    Text: PD - 94230A SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS on typ. l Switch Mode Power Supply (SMPS) 500V 0.190Ω l UninterruptIble Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement


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    PDF 4230A IRFP23N50L irfp23n50

    9418a

    Abstract: irf 418a IRFN450
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.418A HEXFET POWER MOSFET IRFN450 N-CHANNEL Ω HEXFET 500 Volt, 0.415Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.


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    PDF IRFN450 9418a irf 418a IRFN450

    smd 2f

    Abstract: IRFN440
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1552 HEXFET POWER MOSFET IRFN440 N-CHANNEL Ω HEXFET 500 Volt, 0.85Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.


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    PDF IRFN440 smd 2f IRFN440

    9418a

    Abstract: IRFN450
    Text: Provisional Data Sheet No. PD-9.418A HEXFET POWER MOSFET IRFN450 N-CHANNEL Ω HEXFET 500 Volt, 0.415Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.


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    PDF IRFN450 9418a IRFN450

    IRFN440

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1552 HEXFET POWER MOSFET IRFN440 N-CHANNEL Ω HEXFET 500 Volt, 0.85Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.


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    PDF IRFN440 IRFN440

    035H

    Abstract: IRFP23N50L IRFPE30
    Text: PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS on typ. l Switch Mode Power Supply (SMPS) 500V 0.190Ω l UninterruptIble Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement


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    PDF IRFP23N50L 170ns O-247AC O-247AC IRFPE30 035H IRFP23N50L IRFPE30

    PACKARD 58 vch

    Abstract: packard 12020035
    Text: V-Series Contura II & III Switches The V-Series Contura II & III snap-in rocker switches offer countless unique options including choices for ratings, circuits, colors, illuminations and symbols. These single or double pole switches feature removable actuators in a choice of actuator styles


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    PDF UL1500 PACKARD 58 vch packard 12020035

    Untitled

    Abstract: No abstract text available
    Text: MCOTS-F-28E-P-DM Passive Filter Demi-Brick -70V to +70V Continuous Input MILITARY COTS EMI FILTER 10A Output Current 60mΩ @ 100°C >80dB @ 500kHz Max. DC Resistance Differential Attenuation FULL POWER OPERATION: -55ºC to +100ºC The Mil-COTS series of EMI filters brings SynQor’s field


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    PDF MCOTS-F-28E-P-DM 500kHz

    Untitled

    Abstract: No abstract text available
    Text: Curtis We Build Confidence! RFI Power Line Filters Curtis Industries A Div. of Powers Holdings, Inc. Curtis Industries A Division of Powers Holdings, Inc. Curtis Industries is recognized as a leader in RFI Power Line Filters. We focus on five key areas to insure high quality filters and total


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    IRFP23N50L

    Abstract: No abstract text available
    Text: PD - 94230C IRFP23N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.190Ω 500V Features and Benefits


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    PDF 94230C IRFP23N50L 170ns O-247AC 10VXDUC O-247AC IRFP23N50L

    4884 MOSFET data

    Abstract: AN1001 IRFBA22N50A 4.5V TO 100V INPUT REGULATOR
    Text: PD-91866B IRFBA22N50A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


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    PDF PD-91866B IRFBA22N50A AN1001) Super-220TM O-273AA) 4884 MOSFET data AN1001 IRFBA22N50A 4.5V TO 100V INPUT REGULATOR

    035H

    Abstract: IRFPE30 IRFP23N50LPBF
    Text: PD - 94999 IRFP23N50LPbF SMPS MOSFET Applications HEXFET Power MOSFET • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.190Ω 500V 170ns 23A • Motor Control applications


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    PDF IRFP23N50LPbF 170ns O-247AC IRFPE30 O-247AC 035H IRFPE30 IRFP23N50LPBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94230C IRFP23N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.190Ω 500V Features and Benefits


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    PDF 94230C IRFP23N50L 170ns O-247AC 08-Mar-07

    AN1001

    Abstract: IRF7453 IRF74
    Text: PD- 93899A IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001


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    PDF 3899A IRF7453 AN1001) IA-48 AN1001 IRF7453 IRF74

    IRFP23N50L

    Abstract: No abstract text available
    Text: PD - 94230C IRFP23N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.190Ω 500V Features and Benefits


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    PDF 94230C IRFP23N50L 170ns O-247AC 10Vability, 12-Mar-07 IRFP23N50L

    mosfet k 2038

    Abstract: IRFP450A
    Text: PD -91884 IRFP450A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


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    PDF IRFP450A O-247AC Fact10) mosfet k 2038 IRFP450A

    Untitled

    Abstract: No abstract text available
    Text: PD - 94999 IRFP23N50LPbF SMPS MOSFET Applications HEXFET Power MOSFET • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.190Ω 500V 170ns 23A • Motor Control applications


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    PDF IRFP23N50LPbF 170ns O-247AC 08-Mar-07

    U22 2.5A 250V

    Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


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    PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644

    5d3 diode

    Abstract: A/SMD 5d3 diode
    Text: PD -9.1488 International l R Rectifier IRFI9634G PRELIMINARY HEXFET Power M OSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -250V R DS on = 1 -0Q


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    PDF IRFI9634G -250V O-220 4BS54S2 5d3 diode A/SMD 5d3 diode

    Untitled

    Abstract: No abstract text available
    Text: Jp | j - 0 p p q j- j q J p q Provisional Data Sheet No. PD-9.433B I O R Rectifier JANTX2N6802 HEXFET POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N -C H A N N E L 500 Volt, 1 .5 0 HEXFET Product Sum m arf HEXFET technology is the key to International


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    PDF JANTX2N6802 JANTXV2N6802 MIL-PRF-19500/557] IRFF430]

    Untitled

    Abstract: No abstract text available
    Text: I p j -0 p p q j- j q p| q I Provisional Data Sheet No. PD-9.1552 I R Rectifier HEXFET POWER MOSFET IRFN440 N -C H A N N E L Product Summan1 500 Volt, 0.85ft HEXFET HEXFET technology is the key to International Rectifier's advanced line of power M O S F E T transistors. The effi­


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Jp j-0 rnational Provisional Data Sheet No. PD-9.336E I O R Rectifier JANTX2N6762 HEXFET POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N- CHA NNE L 500 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi­


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    PDF JANTX2N6762 JANTXV2N6762 MIL-PRF-19500/542] IRF430] 554S5