DISS1PAT10N Search Results

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Text: TOSHIBA M ICROW AVE POWER QaAs F MICROWAVE SEMICONDUCTOR TIM0910-20 TECHNICAL DATA FEATURES: • H IG H POWER P id B = 43. 5 dBm at 9. 5GHz to 10. 5GHz H IG H G A IN G id B = 6 .0 dB at 9.5GHz to 10.5GHz B R O A D BAND IN T E R N A L L Y M A TC H ED ■ H E R M E T IC A L L Y S E A LE D PACKAGE