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    DISCRETE PSPICE: DIODE MODELS Search Results

    DISCRETE PSPICE: DIODE MODELS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DISCRETE PSPICE: DIODE MODELS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N914 pspice

    Abstract: 1N4148 pspice 1N4148 SMA 1N4004 SMB 1N4148 JAN Diode 1N4004 SMA JAN 1N4148 1N4148 smc ss14 diode DIODE 1N4004
    Text: Discrete Temperature range Software version Revision date 1N3064 DO-35-2 Electrical 25°C N/A N/A 1N4004 DO-41-2 Electrical 25°C 6.0 Jul 05, 2002 1N4148 DO-35-2 Electrical 25°C 6 Jan 01, 1994 1N4149 DO-35-2 Electrical 25°C N/A N/A 1N4150 DO-35-2 Electrical


    Original     		PDF 1N3064 1N4004 1N4148 1N4149 1N4150 1N4151 1N4152 1N4154 1N4305 1N4448 1N914 pspice 1N4148 pspice 1N4148 SMA 1N4004 SMB 1N4148 JAN Diode 1N4004 SMA JAN 1N4148 1N4148 smc ss14 diode DIODE 1N4004

    shockley diode application

    Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
    Text: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for


    Original     		PDF 1970s. F632-79. shockley diode application shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet

    ipad circuit schematic

    Abstract: ED 47 EMI CHIP FILTER AN1751 pin connector ipad ipad data sheet 74HC04 EMIF10-1K010F1 pspice ESD Discrete PSPICE: Diode Models
    Text: AN1751 APPLICATION NOTE EMI Filters: Recommendations and measurements P. MERCERON AND P. RABIER With the development of wireless telecommunications, consumer products and cellular phones are subjected to Radio Frequency Interference and may generate ElectroMagnetic Interference. This is in addition


    Original     		PDF AN1751 ipad circuit schematic ED 47 EMI CHIP FILTER AN1751 pin connector ipad ipad data sheet 74HC04 EMIF10-1K010F1 pspice ESD Discrete PSPICE: Diode Models

    13N50c

    Abstract: No abstract text available
    Text: QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB13N50C/FQI13N50C 13N50C FQB13N50CTM O-263 FQB13N50C FQB13N50CTM com/pf/FQ/FQB13N50C 07-Dec-2009 13N50c

    75345p

    Abstract: No abstract text available
    Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2001 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75345G3, HUF75345P3, HUF75345S3S HUF75345S3 O-262 75345p

    75652

    Abstract: 75652G AN7254 AN9321 AN9322 HUFA75652G3 TB334
    Text: HUFA75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUFA75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUFA75652G3 O-247 75652G 75652 75652G AN7254 AN9321 AN9322 HUFA75652G3 TB334

    75852G

    Abstract: AN7254 AN9321 AN9322 HUFA75852G3 TB334
    Text: HUFA75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUFA75852G3 O-247 75852G 75852G AN7254 AN9321 AN9322 HUFA75852G3 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUF75852G3 O-247 75852G

    75652G

    Abstract: 75652 AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334 HUF75652G
    Text: HUF75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUF75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUF75652G3 O-247 75652G 75652G 75652 AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334 HUF75652G

    75852G

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF75852G3 TB334
    Text: HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUF75852G3 O-247 75852G 75852G AN7254 AN7260 AN9321 AN9322 HUF75852G3 TB334

    SPICE model for UC3844

    Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
    Text: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF BR1522/D Aug-2000 r14525 BR1522/D SPICE model for UC3844 UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler

    TB370

    Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA
    Text: HUF75531SK8 Data Sheet December 2001 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75531SK8 MS-012AA 75531SK8 HUF75531SK8 TB370 AN9321 AN9322 HUF75531SK8T MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: HUF75652G3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 8 mΩ Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75652G3 O-247 75652G HUF75652G3

    Untitled

    Abstract: No abstract text available
    Text: HUF75852G3 Data Sheet October 2013 N-Channel UltraFET Power MOSFET 150 V, 75 A, 16 mΩ Features Packaging JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75852G3 O-247 75852G HUF75852G3

    Untitled

    Abstract: No abstract text available
    Text: HUF75631S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 33 A, 40 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE GATE SOURCE • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75631S3S O-263AB HUF75631S3ST 75631S HUF75631S3S

    Untitled

    Abstract: No abstract text available
    Text: HUF75842P3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 150 V, 43 A, 42 mΩ Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.042Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75842P3 O-220AB 75842P HUF75842P3

    Untitled

    Abstract: No abstract text available
    Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.


    Original     		PDF 1N4154 DO-35 1N4154TR DO-35 1N4154 DO-35-2

    Untitled

    Abstract: No abstract text available
    Text: FQB12N60 / FQI12N60 April 2000 QFET TM FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB12N60 FQI12N60

    Untitled

    Abstract: No abstract text available
    Text: SFW/I9640 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 0.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area D2-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V


    Original     		PDF -200V SFW/I9640 SFI9640TU O-262

    Untitled

    Abstract: No abstract text available
    Text: SFW/I9614 Advanced Power MOSFET FEATURES BVDSS = -250 V ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology RDS on = 4.0 Ω ν Lower Input Capacitance ν Improved Gate Charge ID = -1.6 A ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V


    Original     		PDF -250V SFW/I9614 SFI9614TU O-262 SFI9614

    fairchild 1n4150

    Abstract: FAIRCHILD DIODE ultra fast diode 1N4150
    Text: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.


    Original     		PDF 1N4150 FDLL4150 FDLL4150 LL-34 DO-35 MMBD1201-1205 DO-35-2 fairchild 1n4150 FAIRCHILD DIODE ultra fast diode

    Untitled

    Abstract: No abstract text available
    Text: HUF76429S3S October 2013 Data Sheet N-Channel Logic Level UltraFET Power MOSFET 60 V, 44 A, 25 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.022Ω, VGS = 10V - rDS(ON) = 0.025Ω, VGS = 5V • Simulation Models


    Original     		PDF HUF76429S3S O-263AB HUF76429S3ST 76429S HUF76429S3S

    Untitled

    Abstract: No abstract text available
    Text: HUF76609D3S October 2013 Data Sheet N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 mΩ Packaging Features JEDEC TO-252AA DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models


    Original     		PDF HUF76609D3S O-252AA HUF76609D3ST 76609D HUF76609D3S

    76633P

    Abstract: 993E4 2040e 76633 741E
    Text: HUF76633P3_F085 Data Sheet April 2012 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance - rDS ON = 0.035Ω, VGS = 10V - rDS(ON) = 0.036Ω, VGS = 5V SOURCE DRAIN GATE • Simulation Models


    Original     		PDF HUF76633P3 O-220AB 76633P 76633P 993E4 2040e 76633 741E