DIP32
Abstract: MR27V801D MR27V801DMA MR27V801DRA MR27V801DTA
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MR27V801D
576-Word
MR27V801D8MPROM1
MR27V801DCMOS32
DIP32SOP32TSOP
100ns
32DIP
DIP32-P-600-2
MR27V801DRA)
32SOP
DIP32
MR27V801D
MR27V801DMA
MR27V801DRA
MR27V801DTA
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MR27V401E
Abstract: MR27V401EMA MR27V401ERA MR27V401ETA
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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a6628
Abstract: A-6628 cewe DIP32 MSM548512L
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0044-17-Y1
MSM548512L
MSM548512L
288-Word
MSM548512L2048
84MSRAMCMOS
250mW
500mW
160ns
a6628
A-6628
cewe
DIP32
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DIP32
Abstract: MR27V801D
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MR27V801D
576-Word
MR27V801D8M
MR27V801DCMOS32
DIP32SOP32TSOP
32DIP
DIP32-P-600-2
MR27V801D-xxRA)
32SOP
OP32-P-525-1
DIP32
MR27V801D
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DIP32
Abstract: MSM52V1001LL LTA070
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2I0014-17-Y1
MSM52V1001LL
MSM52V1001LL
072-Word
MSM52V1001LL131
100ns20mAMax.
Ta070
32600milDIP
DIP32-P-600-2
DIP32
LTA070
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MR27V801D
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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100pF
800ohms
MR27V801D
MR27V801D
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MSM52V1001LP
Abstract: TSOPI32-P-820-0
Text: E2I0016-17-Y1 ¡ Semiconductor MSM52V1001LP ¡ Semiconductor This version: Jan. 1998 MSM52V1001LP Previous version: Aug. 1996 131,072-Word ¥ 8-Bit CMOS STATIC RAM DESCRIPTION The MSM52V1001LP is a 131,072-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V power
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E2I0016-17-Y1
MSM52V1001LP
072-Word
MSM52V1001LP
072-word
TSOPI32-P-820-0
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MSM538031E
Abstract: 32PIN 32-PIN MSM538001E-XXGS-K MSM538001E-XXRS MSM538001E-XXTS-K
Text: Semiconductor MSM538031E 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM538031E is a high-speed silicon gate CMOS Mask ROM with 1,048,576word x 8-bit capacity. The MSM538031E operates on a single 3.0V or 3.3V power supply but offers the same fast accress times as products that operate at 5.0V. The MSM538031E's
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MSM538031E
576-Word
MSM538031E
576word
150ns--20mA
120ns--25mA
D-41460
32PIN
32-PIN
MSM538001E-XXGS-K
MSM538001E-XXRS
MSM538001E-XXTS-K
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Untitled
Abstract: No abstract text available
Text: DIP32-P-600-2.54 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ(≥5µm) 4.70 TYP. 3 版/96.12.11
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DIP32-P-600-2
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DIP32-P-600-2
Abstract: No abstract text available
Text: ¡ 電子デバイス 1A MR27V801D 1,048,576-Wordx8-Bit Production Programmed Read Only Memory P2ROM n 概要 MR27V801Dは8Mビットの書き込み済みの読み出し専用メモリ(P2ROM)です。 メモリ容量は 1,048,576ワード×8ビットで、3V~3.3Vの単一電源で使用できます。
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MR27V801D
576Word
MR27V801D8M
MR27V801DCMOS32
DIP32SOP32TSOP
32DIP
DIP32P6002
MR27V801DxxRA)
32SOP
OP32P5251
DIP32-P-600-2
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LGA 1156 PIN OUT diagram
Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Text: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)
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DIP8-P-300-2
DIP14-P-300-2
DIP16-P-300-2
DIP18-P-300-2
MIL-M-38510
MIL-STD-883
LGA 1156 PIN OUT diagram
QSJ-44403
LGA 1150 Socket PIN diagram
LGA 1155 Socket PIN diagram
IC107-26035-20-G
LGA 1151 PIN diagram
REFLOW lga socket 1155
IC107-3204-G
TB 2929 H alternative
LGA 1155 pin diagram
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DIP32
Abstract: MSM52V1001L
Text: J2I0015-17-Y1 作成：1998年 1月 MSM52V1001L l 前回作成：1996年 8月 ¡ 電子デバイス MSM52V1001L 131,072-Wordx8-Bit CMOS STATIC RAM n 概要 ~
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J2I0015-17-Y1
MSM52V1001L
MSM52V1001L
072-Word
MSM52V1001L131
100ns40mAMax.
Ta070
32600milDIP
DIP32-P-600-2
DIP32
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MSM548512L
Abstract: MSM548512L-10GS-K MSM548512L-10RS MSM548512L-12RS MSM548512L-80RS
Text: E2L0044-17-Y1 ¡ Semiconductor MSM548512L ¡ Semiconductor This version: Jan. 1998 MSM548512L Previous version: Dec. 1996 524,288-Word ¥ 8-Bit High-Speed PSRAM DESCRIPTION The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process,
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E2L0044-17-Y1
MSM548512L
288-Word
MSM548512L
OP32-P-525-1
MSM548512L-10GS-K
MSM548512L-10RS
MSM548512L-12RS
MSM548512L-80RS
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MR27V801D
Abstract: MR27V801DMA MR27V801DRA MR27V801DTA
Text: ¡ Semiconductor 1A MR27V801D 1,048,576-Word x 8-Bit One Time PROM DESCRIPTION The MR27V801D is a 8Mbit electrically Programmable Read-Only Memory organized as 1,048,576 word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.
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MR27V801D
576-Word
MR27V801D
32-pin
100ns
MR27V801DMA
MR27V801DRA
MR27V801DTA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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TC551001
BPL/BFL/BFTL/BTRL/BSTL/BSRL-70
072-WORD
TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL
576-bit
32-P-0820-0
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI is a 1,048,576-bit static random access memory SRAM
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OCR Scan
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TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI-70
TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI
576-bit
32-P-0820-0
32-P-0
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TC518129CFWL-80
Abstract: 2SA1015
Text: TOSHIBA TC518129CPL/CFWL/CFTL-70V,-80V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129CPIVCFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory PSRAM
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TC518129CPL/CFWL/CFTL-70V
072-WORD
TC518129CPIVCFL/CFWL/CFTL
578-bit
TC518128C
DIP32-P-600-2
TC518129CPL-70V
TC518129CPL-80V
TC518129CPL-10V
TC518129CFWL-80
2SA1015
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TC551001
Abstract: No abstract text available
Text: TOSHIBA TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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TC551001
BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L
072-WORD
TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI
576-bit
32-P-0820-0
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048,576-bit static random access memory SRAM organized as 131,072 words bv 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL-70V
TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL
576-bit
32-P-0820-0
32-P-0
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TC551001
Abstract: TSOP 50 PIN TOSHIBA TSOP- 50 PIN TOSHIBA
Text: TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI is a 1,048,576-bit static random access memory SRAM
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OCR Scan
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PDF
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TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI-70
072-WORD
TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI
576-bit
32-P-0820-0
32-P-0
TC551001
TSOP 50 PIN TOSHIBA
TSOP- 50 PIN TOSHIBA
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C401CZ 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C401CZ is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MSM27C401CZ operates on a single +3V-5V power supply and is TTL compatible.
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MSM27C401CZ
288-Word
MSM27C401CZ
32-pin
150ns
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DIP36-P-600-2
Abstract: MR27V801D
Text: O K I Semiconductor MR27V801D Preliminary 1,048,576-Word x 8-Bit One Time PROM DESCRIPTION The MR27V801D is a 8M bit electrically Programmable Read-Only Memory organized as 1,048,576 word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.
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MR27V801D
576-Word
32-pin
100ns
DIP36-P-600-2
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toshiba tc551001BPL
Abstract: TC551001 tc551001bpl
Text: T O S H IB A TC551001 BPI_/BFI_/BFTL/BTRI_/BSTL/BSRL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM
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TC551001BPL/BFL/B
iyBTRL/BSTL/BSRL-70L
072-WORD
TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL
576-bit
32-P-0
toshiba tc551001BPL
TC551001
tc551001bpl
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551001CP
Abstract: No abstract text available
Text: TOSHIBA TC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CP/CF/CFT/CTR/CST/CSR is a 1,048,576-bit static random access memory SRAM organized
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OCR Scan
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551001CP/CF/CFT/CTR/CST/CSR-55
TC551001CP/CF/CFT/CTR/CST/CSR
576-bit
32-P-0820-0
TC551001CP/CF/CFT/CTR/CST/CSR-55
32-P-0
551001CP
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