Untitled
Abstract: No abstract text available
Text: BYW 08-50 → 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT
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BYW 70
Abstract: No abstract text available
Text: SGS-THOMSON M e œ iL ie ïG M e s BYW 08-50 200 HIGH EFFIC IEN CY FAST R EC O VER Y R ECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY
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Untitled
Abstract: No abstract text available
Text: £ Z 7 S C S - T H O M S O N ^ 7# . [10MËILI §ra(B i0(SI BYW 08-50 -» 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE
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7T2T237
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Untitled
Abstract: No abstract text available
Text: r z 7 S C S -T H O M S O N * 7 # M eB m iO T M O C S BYW 08-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES . LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY
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BYV 200
Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Text: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-150ng
BYX61-100
BYV 200
BYV 200v
FZJ 101
BYX61-200
BYW 200
BYX61-400
99P-200
BYX65-400
BYV 35 C
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BYV 200
Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Text: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-1508-100,
BYV 200
diodes byw 92
FZJ 101
99P-200
byw 150
BYW 200
diodes byw 08 200
BYV 35
diodes byw 51 200
BYV 35 C
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Untitled
Abstract: No abstract text available
Text: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T
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CB-425)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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diodes byw 92
Abstract: BYW 200 ZTF 160 thomson diodes diode BYW 92 diode La AV8080 diode BYW 66
Text: STC D 1• 7 ^ 5 3 7 S G S—THOMSON 59C 0 2 2 1 6 D OüüEait. 7 T-*>2~U BYW 08-50-200, R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T SUPERSW ITCH
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BYW08
diodes byw 92
BYW 200
ZTF 160
thomson diodes
diode BYW 92
diode La
AV8080
diode BYW 66
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Diode LT 9250
Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY
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00G2252
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode LT 9250
diode BYW 92
LT 9250
diode lt 0236
5 amp diode byw 92-200
diode BYW 92-200
diodes byw 92
diodes byw
diode BYW 19
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77150
Abstract: diode BYW 31 200
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF IE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT
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QGGE22Û
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
77150
diode BYW 31 200
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BYW 200
Abstract: diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200
Text: h ig h e ffic ie n c y f a s t r e c o v e r y r e c t if ie r d io d e s y THOMSON-CSF diodes de redressement rapide à haut rendement Types •o Vrrm >FSM 10 ms A <V ) (A) Tj = 150° C 35A / Tease = 110°C N N N BYV 92-200 (R) BYV 92-300 (R) BYV 92-400 (R)
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28UNF*
CB-34)
BYW 200
diodes byw 92
byw 150
diodes byw 08 200
Thomson-CSF diodes de redressement
Diodes de redressement
diodes byw
CB-34
1250A2s
92200
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111EF
Abstract: BYW 200 diodes byw 78 100 T03A diode BYW 66 78150
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A , (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 022 D T 'ô 3 ~ Z I HIGH EFFICIENCY V SUPERSWITCH
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CB-425)
CB-262)
CB-262
QDD53t
CB-19)
CB-428)
CB-244
111EF
BYW 200
diodes byw 78 100
T03A
diode BYW 66
78150
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transistor S 8050
Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY
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BYWB05Q
130OC
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
transistor S 8050
ggqb2
8A273
BYW60
Diode BYW 56
150TV
diodes byw
transistor 8050 d
diode BYW 60
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Diode BYW 56
Abstract: 0224S diode BYW 19 2791T byw+36+v
Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH
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1200C
REDRE08
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode BYW 56
0224S
diode BYW 19
2791T
byw+36+v
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aval
Abstract: No abstract text available
Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
aval
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Untitled
Abstract: No abstract text available
Text: r z T SGS-THOMSON ^ 7# B Y W 9 9 P -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY SM ALL CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . THE SPECIFICATIONS AND CURVES EN ABLE THE DETERMINATION OF t rr AND I r m
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99P-50
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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Untitled
Abstract: No abstract text available
Text: • 55E D N ANER P H IL IP S/ DI SC R ET E 1=^53=131 □Q5E73CI Q ■ BYW29 SERIES T - 0 3 -1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery
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Q5E73C
BYW29
0022741a
T-03-17
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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T0-204AA
T0-204AE
T0-220AB
T0-220AC
Cross Reference power MOSFET
irf 3502 mosfet
SD500KD
irf3203
mosfet irf equivalent book
sem 2106 inverter diagram
IFR822
Diode BYW 56
BUZ41 equivalent
transistor f630
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6052B
Abstract: U6052B 6051B U6050B 6050B TELEFUNKEN EL 156 22-RELAY Diode BYW 56 diode BYW 64 U6052
Text: 44E » E3 flTSDOTti D0iafl30 3 E3ALG6 . .y 6 0 5 0 B • U 6051 B • TELEFUNKEN ELECTRONIC U 6052 B LOCAL MULTIPLEX SYSTEM $ ,q - j ' Technology: Bipolar Application: ' • Transmitter U 6050B and receiver (U 6 0 5 1 B, U 6 0 5 2 B) for permanent scanning of 8 switch-positions,
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D01Gfl3Ã
6052B)
T-75-45-07
IQ15IHI
6052B
U6052B
6051B
U6050B
6050B
TELEFUNKEN EL 156
22-RELAY
Diode BYW 56
diode BYW 64
U6052
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Untitled
Abstract: No abstract text available
Text: I SGS-THOM SON G 7 . L6203 iy 0.3 ù DMOS FULL BRIDGE DRIVER P R E L IM IN A R Y D A T A • SUPPLY V O L T A G E UP TO 48V • 5A M A X PE AK C U R R E N T • T O T A L RMS C U R R E N T UP TO 4A • Rd s io n 0.3i2 T Y P IC A L V A L U E A T 25°C) •
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L6203
100KHz
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relay HM 810
Abstract: U6050BAFL u6050b-AFL U6050B U6052BAFL U6052B-AFL diode BYW 64 hm 810 relay D-75031 DIODE S4 74
Text: Temic LO CAL U 6 0 5 0 B • U 6051 B U 6052B E le k t r o n lk - S e r v ic e m u l t ip l e x s y s t e m BodelschwinghStr. 32 D-75031 Eppingen Tel.'. 07262/91236-0 Fax: 07262/3213 T e ch n o lo g y: B ip ola r A p p lic a tio n : Transm itter U 6 0 5 0 B and receiver i.U 6051 B, U 6 0 5 2 B) for permanent scanning of 8 sw itch -p osition s,
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D-75031
U6050B)
19i-i
relay HM 810
U6050BAFL
u6050b-AFL
U6050B
U6052BAFL
U6052B-AFL
diode BYW 64
hm 810 relay
DIODE S4 74
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