1N4148 krad
Abstract: SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5
Text: LM136A-2.5QML LM136A-2.5QML 2.5V Reference Diode Literature Number: SNOSAM3D LM136A-2.5QML 2.5V Reference Diode General Description Features The LM136A-2.5QML integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference
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LM136A-2
1N4148 krad
SMD ZENER DIODE 19v
LM136A-2.5QML
LM136-2.5
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Untitled
Abstract: No abstract text available
Text: SMD Zener Diode CZRSC55C2V0-G Thru CZRSC55C36-G Voltage: 2.0 to 36 Volts Power: 0.5 Watts RoHS Device Features 0805 - This diode is also available in other case styles including the 1206 case with the type designation. - Sillcon Planar Power Zener Diode. 0.086 2.20
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CZRSC55C2V0-G
CZRSC55C36-G
QW-BZ023
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DD600S65K1
Abstract: No abstract text available
Text: Technische Information / technical information DD600S65K1 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values ! " # " $% & ' * $% & ()* $% & ( )* " * ! # 5 16 4&' " +, & " 8 +7 4 & ' 7 $% & ' ()*
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DD600S65K1
DD600S65K1
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DD200S65K1
Abstract: No abstract text available
Text: Technische Information / technical information DD200S65K1 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values ! " # " $% & ' * $% & ()* $% & ( )* " * .( . (/ +,12 ! # 6 17 4&' " +, & " 9 +8 4 & '
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DD200S65K1
DD200S65K1
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DD400S65K1
Abstract: No abstract text available
Text: Technische Information / technical information DD400S65K1 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values ! " # " $% & ' * $% & ()* $% & ( )* " * ! # 6 17 5&' " +, & " 9 .( . (/ + 12 3 4 12,+8 5 & '
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DD400S65K1
DD400S65K1
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FZ800R33KF2C
Abstract: DD800S33K2C
Text: Technische Information / technical information DD800S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # %& ' * %& ' ()* $ / /* $ 4'! 6 17 +, ' 9 +8 4 ' !
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DD800S33K2C
FZ800R33KF2C
DD800S33K2C
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # %& ' * %& ' ()* $ / /* # $ 4'! 6 17 +, ' 9 +8 4 ' !
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DD1200S33K2C
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diode zener ZD 260
Abstract: KDZ12VV KDZ36VV sy 360 diode DIODE MARKING 9Y KDZ11VV KDZ13VV KDZ20VV diode zener ZL 27 KDZ33VV
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : VSC C D Normal Voltage Tolerance about 1 2 Sharp Breakdown Characteristic.
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KDZ36VV
KDZ33VV
KDZ30VV
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
20x20mm
diode zener ZD 260
KDZ12VV
KDZ36VV
sy 360 diode
DIODE MARKING 9Y
KDZ11VV
KDZ13VV
KDZ20VV
diode zener ZL 27
KDZ33VV
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TDA8808
Abstract: TDA8808AT TDA8808T TDA8808T/C3
Text: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players
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TDA8808T
TDA8808AT
TDA8808
TDA8808AT
TDA8808T
TDA8808T/C3
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PDF PIN PHOTO DIODE DESCRIPTION
Abstract: tda8808 TDA8808AT TDA8808T GCLF PHOTO diode
Text: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players
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TDA8808T
TDA8808AT
TDA8808
PDF PIN PHOTO DIODE DESCRIPTION
TDA8808AT
TDA8808T
GCLF
PHOTO diode
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DIODE MARKING 9Y
Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.
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KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
20x20mm
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
DIODE MARKING 9Y
9vv marking
kdz16vv
marking zn
diode marking 4Y
KDZ12VVY
KDZ36VV
diode zener ZD 260
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Untitled
Abstract: No abstract text available
Text: BA282/BA283 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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BA282/BA283
1-Jan-2006
100mA
100MHZ,
BA282
BA283
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KDZ16VV
Abstract: diode zener ZD 150 diode zener ZD 260 diode zener ZD 36 marking zn diode marking zn DIODE MARKING 9Y
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.
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KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
20x20mm
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ16VV
diode zener ZD 150
diode zener ZD 260
diode zener ZD 36
marking zn
diode marking zn
DIODE MARKING 9Y
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BA282
Abstract: 100MHZ 200MHZ BA283
Text: BA282/BA283 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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BA282/BA283
100mA
100MHZ,
BA282
BA283
BA282
100MHZ
200MHZ
BA283
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BA282
Abstract: No abstract text available
Text: BA282/BA283 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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BA282/BA283
1-Sep-2009
100mA
100MHZ,
200MHZ
100MHZ
200MHZ,
BA282
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BA282
Abstract: 100MHZ 200MHZ BA283
Text: BA282/BA283 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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BA282/BA283
Fax0755-8324
100mA
100MHZ,
BA282
BA283
BA282
100MHZ
200MHZ
BA283
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Untitled
Abstract: No abstract text available
Text: 3.4mm SURFACE MOUNT LED W1387QMP/EGW HIGH EFFICIENCY RED GREEN Features Description zI.C. COMPATIBLE. The High Efficiency Red source color devices are zWIDE VIEWING ANGLE. Phosphide Orange Light Emitting Diode. zPACKAGE: 1000PCS / REEL. Phosphide Green Light Emitting Diode.
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W1387QMP/EGW
1000PCS
DSAD1352
MAR/01/2005
W1387QMP/EGW
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor OL3392L_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 1310nm MQW DFB Laser Diode Uncooled Module with Single Mode Fiber DESCRIPTION The OKI OL3392L is a 1310nm DFB Laser Diode in a PCB m ountable coaxial package w ith single mode
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OL3392L_
1310nm
OL3392L
OL3392L
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diode zener ZD 36
Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
Text: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .
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W-36W
20x20m
diode zener ZD 36
zener diode, zl 33
DIODE MARKING 9Y
zener diode zg 36
diode marking 4Y
diode zener ZL 30
diode zener ZD 15
diode zener ZL 15
zener diode BZ 22
zener diode, zl 22
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ccd marking zener diode
Abstract: MARKING CCK CMHZ4678 marking ccx
Text: Central CMHZ4678 THRU CMHZ4717 Semiconductor Corp. LOW LEVEL ZENER DIODE 1.8 VOLTS THRU 43 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4678 Series Silicon Low Level Zener Diode is a high quality voltage regulator designed for applications
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CMHZ4678
CMHZ4717
500mW,
100mA
10jiA
OD-123
OD-123
31-October
ccd marking zener diode
MARKING CCK
marking ccx
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Zener Diode LF marking
Abstract: zener diode 1400
Text: central CLL4625 THRU CLL4627 Semiconductor Corp. 500mW LOW NOISE ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4625 Series Silicon Zener Diode is a high quality voltage regulator designed for low leakage, low current and low noise applications.
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CLL4625
CLL4627
500mW
200mA
CLL4626
CLL4627
Zener Diode LF marking
zener diode 1400
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GP 830 diode
Abstract: on semiconductor marking code 1P
Text: Central" CMDZ1L8 THRU CMDZ47L Sem iconductor Corp. SUPERmini LOW LEVEL ZENER DIODE 250mW, 1.8 VOLTS THRU 47 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ1L8 Series Silicon Low Level Zener Diode is a high quality voltage regulator, manufactured in a
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CMDZ47L
250mW,
OD-323
OD-323
31-October
GP 830 diode
on semiconductor marking code 1P
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Zener Diode LF marking
Abstract: No abstract text available
Text: Central CLL4614 THRU CLL4627 Sem iconductor Corp. 500mW LOW NOISE ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4614 Series Silicon Zener Diode is a high quality voltage regulator designed for low leakage, low current and low noise applications.
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CLL4614
CLL4627
500mW
200mA
CLL4614*
CLL4615*
CLL4616*
CLL4617*
CLL4618*
Zener Diode LF marking
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BB205
Abstract: No abstract text available
Text: VISHAY Vishay Telefunken Voltage Regulator Diodes and Z-diodes A voltage regulator diode is a diode which develops an essentially constant voltage across its terminals throughout a specified current range. Special reverse-biased diodes known as Z-diodes and
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BA479G
BA679.
BB205
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