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    DIODE ZL 8.2 Search Results

    DIODE ZL 8.2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ZL 8.2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VPS05605

    Abstract: BF 212 transistor TS1440
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    PDF VPS05605 OT-343 -j100 Dec-13-1999 VPS05605 BF 212 transistor TS1440

    Infineon Technologies transistor 4 ghz

    Abstract: No abstract text available
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3  For low current applications  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding Gms = 23 dB at 1.8 GHz  Transition frequency fT = 25 GHz  Gold metallization for high reliability


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    PDF VPS05605 OT-343 -j100 Nov-17-2000 Infineon Technologies transistor 4 ghz

    siemens rs 1003

    Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability


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    PDF VPS05605 Q62702-F1592 OT-343 -j100 Sep-09-1998 siemens rs 1003 TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440

    a06 transistor

    Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line


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    PDF BFP405 1512dB 25-Line OT343 Q62702-F-1592 a06 transistor TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405

    Untitled

    Abstract: No abstract text available
    Text: TSH511 Hi-fi stereo/mono infrared receiver and stereo sub-carrier demodulator Features • Supply voltage: 2.3V to 5.5V ■ Carriers frequency range: 0.4MHz to 11MHz ■ Two FM receivers for stereo ■ Integrated audio buffers ■ Audio outputs: 20mW into 16 ohms


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    PDF TSH511 11MHz TQFP44

    audio limiter schematics

    Abstract: FM audio transmitter 2.3MHz 2.8MHz 3 mm ir receiver audio squelch circuit 70mVrms hifi power amp schematic schematics for a PA amplifier RX-2 -G 1 Mhz fm demodulator
    Text: TSH511 Hi-fi stereo/mono infrared receiver and stereo sub-carrier demodulator Features • Supply voltage: 2.3V to 5.5V ■ Carriers frequency range: 0.4MHz to 11MHz ■ Two FM receivers for stereo ■ Integrated audio buffers ■ Audio outputs: 20mW into 16 ohms


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    PDF TSH511 11MHz TQFP44 audio limiter schematics FM audio transmitter 2.3MHz 2.8MHz 3 mm ir receiver audio squelch circuit 70mVrms hifi power amp schematic schematics for a PA amplifier RX-2 -G 1 Mhz fm demodulator

    2.3MHz 2.8MHz

    Abstract: hifi power amp schematic JESD97 TQFP44 TSH511 TSH511C TSH511CF TSH511CFT TSH512 2.3MHz 2.8MHz receiver
    Text: TSH511 Hi-fi stereo/mono infrared receiver and stereo sub-carrier demodulator Features • Supply voltage: 2.3V to 5.5V ■ Carriers frequency range: 0.4MHz to 11MHz ■ Two FM receivers for stereo ■ Integrated audio buffers ■ Audio outputs: 20mW into 16 ohms


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    PDF TSH511 11MHz TQFP44 2.3MHz 2.8MHz hifi power amp schematic JESD97 TQFP44 TSH511 TSH511C TSH511CF TSH511CFT TSH512 2.3MHz 2.8MHz receiver

    transistor b 1238

    Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1


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    PDF VPS05605 Q62702-F1794 OT-343 50Ohm 45GHz -j100 Sep-09-1998 transistor b 1238 Q62702-F1794 transistor bf 520 transistor bfp 520

    HD74LV2G241A

    Abstract: Hitachi DSA0015
    Text: HD74LV2G241A Dual Bus Buffer Noninverted with 3–state Output ADE-205-350 Z 1st. Edition June 2000 Description The HD74LV2G241A has dual bus buffer noninverted with 3–state output in a 8 pin package. Two noninverters are included in one circuit. Each circuit can be independently controlled by the enable signal


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    PDF HD74LV2G241A ADE-205-350 HD74LV2G241A Operati2100 Hitachi DSA0015

    Hitachi DSA0076

    Abstract: HD74LV240A HD74LV2G240A
    Text: HD74LV2G240A Dual Bus Buffer Inverted with 3–state Output ADE-205-349 Z 1st. Edition May 2000 Description The HD74LV2G240A has dual bus buffer inverted with 3–state output in a 8 pin package. Two inverters are included in one circuit. Each circuit can be independently controlled by the enable signal 1OE or 2OE,


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    PDF HD74LV2G240A ADE-205-349 HD74LV2G240A HD74LV242100 Hitachi DSA0076 HD74LV240A

    ADE-205-354

    Abstract: Hitachi DSA0076 HD74LV245A HD74LV2G245A
    Text: HD74LV2G245A Dual Bus Transceivers with 3–state Outputs ADE-205-354 Z 1st. Edition May 2000 Description The HD74LV2G245A has two buffers with three state output in a 8 pin package. When DIR is high, data is transferred from the A inputs to the B outputs, and when DIR is low, data is transferred from the B inputs


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    PDF HD74LV2G245A ADE-205-354 HD74LV2G245A char2100 ADE-205-354 Hitachi DSA0076 HD74LV245A

    zener diode, zl 33

    Abstract: diode zener ZL 20 diode zener ZL 8 diode zener ZL 27 1n5524 diode zener ZL 12
    Text: 1N5518B thru 1N5546B-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes DO-35 Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518 thru 1N5546 series of 0.5 watt axial-leaded glass Zener Voltage Regulators


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    PDF 1N5518B 1N5546B-1 DO-35 MIL-PRF-19500/437 1N5518 1N5546 DO-35 T4-LDS-0037-1, zener diode, zl 33 diode zener ZL 20 diode zener ZL 8 diode zener ZL 27 1n5524 diode zener ZL 12

    diode zener ZL 27

    Abstract: diode zener ZL 15 zener diode, zl 33 diode zener ZL 8 1N5522B1 JANTXV diode zener ZL 30 diode zener ZL 10
    Text: 1N5518B-1 thru 1N5546B-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes DO-35 Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518-1 thru 1N5546-1 series of 0.5 watt axial-leaded glass Zener Voltage Regulators


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    PDF 1N5518B-1 1N5546B-1 DO-35 MIL-PRF-19500/437 1N5518-1 1N5546-1 DO-35 T4-LDS-0037-1, diode zener ZL 27 diode zener ZL 15 zener diode, zl 33 diode zener ZL 8 1N5522B1 JANTXV diode zener ZL 30 diode zener ZL 10

    diode zl 82

    Abstract: diode SMD MARKING CODE SAW diode zl 8.2 BCR22 smd marking VB SCT-598 smd marking gc smd marking GI 20 5 pin ZL smd diode
    Text: GaAs MMIC CMY 800 Target Data Sheet • Bipolar RF amplifier and GaAs mixer with integrated IF-amplifier for mobile communication i.e. AMPS • typical overall performance (operation conditions 2.7 V, 8 mA; fRF = 881 MHz; fLO = 997 Mhz): Gain 22 dB (incl. 3 dB loss of SAW), Input P– 1 dB


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    PDF SCT-598 SCT-598 GPW09182 diode zl 82 diode SMD MARKING CODE SAW diode zl 8.2 BCR22 smd marking VB smd marking gc smd marking GI 20 5 pin ZL smd diode

    TFF3866

    Abstract: rc 3866 TFF3866DP ZT1000 RHP 305 TFF3866N Megaxess frankfurt RX634
    Text: Technical Data TFF3866N M EMegaxess G AGmbH X Deutschland ESS Edition 10/00 Subscriber Line Interface Circuit SLIC Short Description Features This circuit replaces the conventional transformer based analogue line interfaces in PABX and other telecommunications equipment with a modern


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    PDF TFF3866N TFF3866 rc 3866 TFF3866DP ZT1000 RHP 305 TFF3866N Megaxess frankfurt RX634

    TFF3866DP

    Abstract: TFF3866 diode sg 01 Megaxess ZT1000 RSG20 frankfurt
    Text: Technical Data TFF3866DP M EMegaxess G AGmbH X Deutschland ESS Edition 10/00 Subscriber Line Interface Circuit SLIC Short Description Features This circuit replaces the conventional transformer based analogue line interfaces in PABX and other telecommunications equipment with a modern


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    PDF TFF3866DP TFF3866DP TFF3866 diode sg 01 Megaxess ZT1000 RSG20 frankfurt

    TFF3866DP

    Abstract: TFF3866 ZT1000 Megaxess frankfurt
    Text: Technical Data TFF3866DP M EMegaxess G AGmbH X Deutschland ESS Edition 10/00 Subscriber Line Interface Circuit SLIC Short Description Features This circuit replaces the conventional transformer based analogue line interfaces in PABX and other telecommunications equipment with a modern


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    PDF TFF3866DP TFF3866DP TFF3866 ZT1000 Megaxess frankfurt

    RW300

    Abstract: MV3010-1
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS SL377 ADVANCE INFORMATION DS2098-2.2 SL377 SUBSCRIBER LINE INTERFACE CIRCUIT The SL377 is a Subscriber Line Interface Circuit SLIC for use at the telephone exchange or PABX end of a telephone


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    PDF SL377 DS2098-2 SL377 RW300 MV3010-1

    HD74LVCR2245A

    Abstract: Hitachi DSA00395
    Text: HD74LVCR2245A Octal Bidirectional Transceivers with 3–state Outputs ADE-205-235A Z Preliminary 2nd. Edition January 1999 Description The HD74LVCR2245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs


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    PDF HD74LVCR2245A ADE-205-235A HD74LVCR2245A Hitachi DSA00395

    HD74LVCR2245A

    Abstract: Hitachi DSA0015
    Text: HD74LVCR2245A Octal Bidirectional Transceivers with 3–state Outputs ADE-205-235A Z Preliminary 2nd. Edition January 1999 Description The HD74LVCR2245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs to the A


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    PDF HD74LVCR2245A ADE-205-235A HD74LVCR2245A Hitachi DSA0015

    AN82

    Abstract: SL376 SL377
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS SL377 ADVANCE INFORMATION DS2098-2.2 SL377 SUBSCRIBER LINE INTERFACE CIRCUIT The SL377 is a Subscriber Line Interface Circuit SLIC for use at the telephone exchange or PABX end of a telephone


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    PDF SL377 DS2098-2 SL377 AN82 SL376

    Siemens DIODE E 1240

    Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
    Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability


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    PDF BFP420 25-Line Transistor25 Q62702-F1591 OT343 Siemens DIODE E 1240 AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor

    diode BY239

    Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter


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    PDF LXE15450X MLC446 OT439A. diode BY239 bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15

    ve32

    Abstract: LSL4 SL4 diode
    Text: DM10900 wvftàtâ-fffé.¡i.'* i f e i f ¥>•t. Test Temperature o°c Symbol -0.840 V|H max ViHAmln V|Lm ln Il V|LAm ax V ee - 1 .1 4 5 -1.95 -1.490 -5.2 I> —3 Recommended Operating Conditions + 2 5 °C + 7 0 °C -0.810 -1.105 -1.95 -1.475 -5.2 -0.730


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    PDF DM10900 68VDCto-5 72VDC 50Sto-2 ve32 LSL4 SL4 diode