schematic diagram tv sony 21 trinitron
Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV
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KV-EF34M80
RM-951
SCC-U28D-A
NA324-M3
A80LPD10X)
SBX3005-01
RM-951)
schematic diagram tv sony 21 trinitron
cxa2139s
CXA2130S
IC cxa2139s
ic CXA2130S
C3807 transistor datasheet
sony ic cxa2130s
free CXA2139S
c3807 power transistor
STV5112
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HX 2272 l2
Abstract: top258 HX 2272 EER28 BOBBIN TOP258MN equivalent for TOP258MN YSD2GM121L32B0BA10264 ELF15N010A ELXZ350ELL equivalent for TOP258
Text: DESIGN EXAMPLE REPORT Title 35 W 80 W Peak Power Supply Using TOP258MN Specification 90 – 265 VAC Input; 24 V, 1.46 A (3.33 APEAK) Output Application Inkjet Printer Author Applications Engineering Department Document Number DER-161 Date April 21, 2009
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OP258MN
DER-161
HX 2272 l2
top258
HX 2272
EER28 BOBBIN
TOP258MN
equivalent for TOP258MN
YSD2GM121L32B0BA10264
ELF15N010A
ELXZ350ELL
equivalent for TOP258
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ee25 transformer
Abstract: EE25 core carli ELECTRONICS EE25 EN55022B EPR-93 PKS606Y AC TO DC DIODE BRIDGE PC40EE25-Z capacitor panasonic GC series
Text: Engineering Prototype Report for EP-93 – 32 W/81 W Peak Supply Using PeakSwitch PKS606Y Title 90-265 VAC Input, 30 V, 1.07 A (continuous), Specification 2 A (100 ms), 2.7 A (50 ms) Output Application Printers, DVRs, Audio, General Purpose Author Power Integrations Applications Department
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EP-93
PKS606Y)
EPR-93
22-Jun-2006
cost89
ee25 transformer
EE25 core
carli ELECTRONICS
EE25
EN55022B
EPR-93
PKS606Y
AC TO DC DIODE BRIDGE
PC40EE25-Z
capacitor panasonic GC series
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EE25 transformer
Abstract: Z5U 4700 zener diode mv 5T EE25 core EE25 2006 lisn
Text: Engineering Prototype Report for EP-93 – 32 W/81 W Peak Supply Using PeakSwitch PKS606Y Title 90-265 VAC Input, 30 V, 1.07 A (continuous), Specification 2 A (100 ms), 2.7 A (50 ms) Output Application Printers, DVRs, Audio, General Purpose Author Power Integrations Applications Department
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EP-93
PKS606Y)
EPR-93
30-March-2006
deliver8023
EE25 transformer
Z5U 4700
zener diode mv 5T
EE25 core
EE25 2006
lisn
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PX684K3ID6
Abstract: ee25 transformer EE25 2006 vishay sj 56 EE25 core SIL6039 carli ELECTRONICS yw-360 UL1015 14 AWG wire 8918-189 Belden
Text: Engineering Prototype Report for EP-93 – 32 W/81 W Peak Supply Using PeakSwitch PKS606Y Title 90-265 VAC Input, 30 V, 1.07 A (continuous), Specification 2 A (100 ms), 2.7 A (50 ms) Output Application Printers, DVRs, Audio, General Purpose Author Power Integrations Applications Department
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EP-93
PKS606Y)
EPR-93
22-Jun-2006
cost89
PX684K3ID6
ee25 transformer
EE25 2006
vishay sj 56
EE25 core
SIL6039
carli ELECTRONICS
yw-360
UL1015 14 AWG wire
8918-189 Belden
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webcam circuit diagram
Abstract: 47803 NXP 125 kHz RFID tag EM4001 webcam Schematic Diagram schematic satellite finder finder delay relay
Text: NI myRIO Project Essentials Guide Ed Doering NI myRIO Project Essentials Guide Ed Doering Electrical and Computer Engineering Department Rose-Hulman Institute of Technology iv Printed April 23, 2014. Download the latest version at http://www.ni.com/myrio/project-guide.
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be/kW4v16GuAFE,
be/1Oib10sojds,
webcam circuit diagram
47803 NXP
125 kHz RFID tag EM4001
webcam Schematic Diagram
schematic satellite finder
finder delay relay
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Untitled
Abstract: No abstract text available
Text: bTE N AI1ER P H I L I P S / D I S C R E T E D • bbS3T31 DD3DS7Q 74fl H A P X Pro d uct S pecification Philips S em ico nd uctors B U K 4 4 5 -5 0 0 B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a
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bbS3T31
BUK445-500B
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BUZ15
Abstract: No abstract text available
Text: PowerMOS transistor_ _ BUZ15 N AUER PHILIPS/DISCRETE OhE D ” • hb53l31 □D14Sfl4_l ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
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BUZ15
hb53l31
D14Sfl4
bb53T31
T-39-13
BUZ15_
00145fl
bb53T31
0D145T0
BUZ15
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Untitled
Abstract: No abstract text available
Text: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK545-50A
BUK545-50B
BUK545
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abb ys thyristor
Abstract: ABB thyristor modules ABB Thyristor YST Thyristor ys 150 Thyristor ys YSTT6-01 ABB thyristor ys ABB thyristor ystt6-01 Thyristor ABB ys 150 Thyristor ys 130
Text: A B B PRIVES □OlbSSS GOOOOlt. 1 54E D ABB Drives- MODULES - Thyristor modules MODULE - Thyristor-Module MODULES - Modules de thyristors ff Cat.No. Bestellnummer n°Cat. “ Type Typ Type It s m ItB M S ! Toaso ^TAV / ^ ra s a 10ms T vj max A A °C A °C
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YSTT2-03
201-XX
YSTT6-01
YSTT6-22
YS150202-XX
00V/fjis
000V/jxs
YSDD3-02
abb ys thyristor
ABB thyristor modules
ABB Thyristor YST
Thyristor ys 150
Thyristor ys
ABB thyristor ys
ABB thyristor ystt6-01
Thyristor ABB ys 150
Thyristor ys 130
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2SJ134
Abstract: No abstract text available
Text: N E C DE~| b 4 S 7 S 5 S ELEC TRO NIC S INC DOnDBT 7S g f^ ff PRELIMINARY SPECIFICATICI: P-CHANNEL S I L I C O N P A C K A G E DIMENSIONS {Unît: mm n . o* 10.6 MAX. $ 3.6= 0.2 yf 4.8 M A X 10.0 ,1 4 c *L3± 0.2 123 1.3 ±0.2 Iti 0.5± 0.2- 2.8Ì0.2 0.75=0.3
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4E7S55
2SJ134
427S5S
01C1D4E
T-39-19
J22686
2SJ134
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220v AC voltage stabilizer schematic diagram
Abstract: 7 SEGMENT DISPLAY COMMON CATHODE lt 543 IC 4049 lt 543 7 SEGMENT DISPLAY COMMON CATHODE ram 2114 B778* circuit transistor g23 ic4049 common cathode 7 SEGMENT DISPLAY LT 543 ERO tantal
Text: EPSON - <=* TECHNICAL MANUAL P X INTRODUCTION The EPSOM PX-B is a general-purpose portable com puter driven by an incorporated rechar geable battery. Standard features include a m icro cassette drive, ROM capsule and RS-232C interface a llo w in g the machine to independently handle a variety of appfications. The system
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RS-232C
220v AC voltage stabilizer schematic diagram
7 SEGMENT DISPLAY COMMON CATHODE lt 543
IC 4049
lt 543 7 SEGMENT DISPLAY COMMON CATHODE
ram 2114
B778* circuit
transistor g23
ic4049
common cathode 7 SEGMENT DISPLAY LT 543
ERO tantal
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diode avalanche DSA VRRM 2300
Abstract: diode avalanche DSA DSA 135 dsa 1508-11 DSA VRRM 2300 40561 dsa 1508 abb diode YSD 40629 YSD 45-01
Text: A B B SEMICONDUCTORS AG DSA Avalanche Diodes Type Ordering number Bestellnummer Num. de commande 33E D □ QOlbfi Bfl 000002=1 0 B A B B DSA Avalanche-Dioden I f.ÎM V rrm I frms V Tc=50°C Tc=100<>C 8,3 ms 10 ms kA V A A kA I favm DSA l 403-38.50 GG.L1G 3800.5000 1040
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HEKSV-403GG-831
HEKSV-503GE-831
HEKSV-603GC-831
Q0Q0031
diode avalanche DSA VRRM 2300
diode avalanche DSA
DSA 135
dsa 1508-11
DSA VRRM 2300
40561
dsa 1508
abb diode YSD
40629
YSD 45-01
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Untitled
Abstract: No abstract text available
Text: 6427525 N E C ELECTRONICS tiME75E!5 O G l f i W INC 9ÔD 18989 D -f- 3 ? W 3 1 |~ -••\.vs't.¿V-.-s:>•■*. V i r - v ,.-'•; - ? % § < , & V-ïÿ' ELECTRON DEVICE M O S " F I E L D ' 'E F F E~C T " T R Ä N S I S T 0 ?.~ /' • 2 S K F A S T
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tiME75E
h427sa5
T-39-13
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for1a
Abstract: 2SJ133 6C Y TCH C111
Text: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D I NC Tû MO § D 'f-'lf-J? 19035 DE | b MS T S S S FIELD 00nD3S EFFECT 2 S FAST SWITCHING P - C H A N N E L S I L I C O N P O WE R MÓS S T R A N S I S T C?. J 1 3 3 FET Features p a c k a g e dimensions
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2SJ133
642752S
T-39-lq
b4E75ES
for1a
2SJ133
6C Y
TCH C111
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Untitled
Abstract: No abstract text available
Text: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D D E |b M E 7 S 5 S INC MOÇ D X ^ 1 f -/? 19035 FIELD OOITDBS EFFECT E TRANS I STC = ELECTRON DEVICE 's FAST SWITCHING P-CHANNEL S IL IC O N POWER 3 , I ill 0.6 = 0.1 Absolute Maximum Ratings Ta=25*C Drain t o Source Voltage
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-55to-M50
-39-lq
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Untitled
Abstract: No abstract text available
Text: fiâïWS N E C N E C ELECTRONICS 98D INC ELECTRONICS INC ~Tfl 19005 D 7" — 3 DËf| t.Ma?SES i G D n D D S 4 — * *— M O S F I E L D E F F E C T T R A X S I S T C r . ELECTRON DEVICE 2 F A S T N - C H A N X E L S K 8 2 S S W I T C H I N G S I L I C O N '
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T-39-13
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for1a
Abstract: CITE Electronics 45411
Text: 6427525 N E C N E C ELECTRONICS INC 98D E L E C T R O N I C S I NC 't ö 18954 D DF|bM57SaS 7"-3 ? - o 7 □ D l ñ clS4 14F PR EL I MI NA R Y SPECIFICATION FAST SWITCHING N-CHANNEL .SILICO N POWER in n i IIineters M1 1 rS J!_l |il il1 u m a .1: : i 3 o FET
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-55tc-rl5C
J226SS
for1a
CITE Electronics
45411
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for1a
Abstract: eic73 2SK821
Text: 64 27 525 N E C ELEC TRO NIC S INC 98D 18989 3 tiME7S2S □□IfiTflT 1 |"“ ••. . .,.r NEQm ' w ELECTRON DEVICE MO S y FIEL D P A C K A G E D IM E N S IO N S {Unit: mm _ _ _ _ _ _ " Jl T R A N S I S T G ?. 2SK821 / FAST S W IT C H IN G ft-CHANNEL
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bME7555
2SK821
J22566
for1a
eic73
2SK821
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t523
Abstract: for1a T523H KIA3 zs transistor
Text: 6427525 N E C ELECTRONICS N E C I N C _ E L E C T R O N I C S I N C 1Û 98D19087 D 7 “* V 3 - X S Ï>Ê| fe.457S5S D O l ^ D ñ ? □ | P R E L IM IN A R Y S P E C IF IC A T IO N P-CHANNEL SILICON POWER PACKAGE DIMENSIONS MOS FET ARRAY FEATURES
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457S5S
t523H
bM57SHS
J22SSB
t523
for1a
T523H
KIA3
zs transistor
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d 151811
Abstract: 40669 DSD 1028-25 A diode avalanche DSA dsa 1508 diode avalanche DSA VRRM 2300 abb diode YSD CH-4UH dsa 1208 DSA 135
Text: S E MI COND UC TORS AG rrm Ifavm O o &> V f Type O rdering num ber Bestellnum m er Num. de com m ande □ ODl hfi Bfi OOOQOaq □ B A B B DSA Avalanche-Dioden 1 DSA Avalanche Diodes 3flE D o A B B Tc A V DSA l 403-38.50 GG, L1G 3800.5000 1040 Tf 5M V = 100°C 8,3 m s 10 m s
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0n0n02Â
HEKSV-403GG-831
HEKSV-503GE-831
HEKSV-603GC-831
GDG0Q31
d 151811
40669
DSD 1028-25 A
diode avalanche DSA
dsa 1508
diode avalanche DSA VRRM 2300
abb diode YSD
CH-4UH
dsa 1208
DSA 135
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kt829a
Abstract: VEB mikroelektronik Datenblattsammlung Halbleiterbauelemente DDR information applikation mikroelektronik B4207D mikroelektronik datenblattsammlung mikroelektronik DDR "halbleiterwerk frankfurt" KT 829 b
Text: 0=¡rúl[hE=°@Blel- t3nariilK e le k t r o n ik - b a u e t e m e n t e Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elek tronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" (LEB
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DIODE C04 06
Abstract: h04040
Text: J 4z. *• SPECIFICATION Oaviaa Him* Tvb* Nflms _Sbof» J!a _ POWER MOSFET 2 S K 2 644 -0 1 M S 5 F 3 0 5 2 Hj I ■! I* : i|î fi i i i j f « ¡IN ? •ts I m \ É frlli / Fuji E lectric C a.,U d. M alfam ato Factory Q A Tg^S ^ A W E F u ji E to c tr fc C o .,L td .
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MS5F30S2
2SK2W4-01
H04-004-03
S3IM3ai3H13
MS5F2052
HO4-C04-03
SDINCKJ103T3
11/ZV6
DIODE C04 06
h04040
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diode RU3
Abstract: characteristic of diode zl 100
Text: J 4z. *• SPECIFICATION Oaviaa Him* Tvb* Nflms _Sbof» J!a _ POWER MOSFET 2 S K 2 644 -0 1 M S 5 F 3 0 5 2 Hj I ■! I* : i|î fi i i i j f « ¡IN ? •ts I m \ É frlli / Fuji E lectric C a.,U d. M alfam ato Factory Q A Tg^S ^ A W E F u ji E to c tr fc C o .,L td .
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MS5F30S2
2SK2W4-01
H04-004-03
S3IM3ai3H13
MS5F2052
ho4-c04-03
SDINCKJ103T3
diode RU3
characteristic of diode zl 100
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