pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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mo299
Abstract: TAC10 lt416 LHS01
Text: LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • Integrated PWM fan speed control output supports high The LM96063 is remote diode temperature sensors with integrated fan control that includes remote diode sensing. The
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LM96063
2N3904,
mo299
TAC10
lt416
LHS01
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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STPSC2006
Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power
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STPSC2006CW
O-247
STPSC2006
STPSC2006CW
silicon carbide diode
STMicroelectronics POWER SWITCHING
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Untitled
Abstract: No abstract text available
Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power
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STPSC2006CW
O-247
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Untitled
Abstract: No abstract text available
Text: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj
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STPS20200C
O-220FPAB
STPS20200CFP
O-220AB
STPS20200CT
STPS20200CG-TR
DocID024382
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L30 dual diode
Abstract: No abstract text available
Text: STPS20200C Power Schottky diode Datasheet production data Features Diode 1 • Low forward voltage drop A1 Very small conduction losses K Diode 2 Negligible switching losses A2 Extremely fast switching Low thermal resistance K -40°C minimum operating Tj
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STPS20200C
O-220FPAB
STPS20200CFP
O-220AB
STPS20200CT
STPS20200CG-TR
DocID024382
L30 dual diode
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X100M
Abstract: laser diode bare chip
Text: SLD-980-P50-C-300-03 UNION OPTRONICS CORP. 980nm Laser Diode chips 980nm Laser Diode Chips SLD-980-P50-C-300-02 size :300*300 m Specifications Device Laser Diode Bare Chip Structure Double Channel , Single Ridge Waveguide 300µ m •External dimensions Unit : μm
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SLD-980-P50-C-300-03
980nm
SLD-980-P50-C-300-02
x300m
x100m
laser diode bare chip
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rld78pz
Abstract: No abstract text available
Text: RLD78PZW2 Laser Diodes AlGaAs laser diode RLD78PZW2 The RLD78PZW2 is infrared laser diode high power output type pulse 180mW . This is the best for optical disk drive use, such as CD-R/RW. !Applications Max. X32 speed CD-R/RW drives. !Features 1) Absolute maximum optical power output : pulse 180mW
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RLD78PZW2
RLD78PZW2
180mW)
180mW
784nm
rld78pz
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RLD78PZW2
Abstract: No abstract text available
Text: RLD78PZW2 Laser Diodes AlGaAs laser diode RLD78PZW2 The RLD78PZW2 is infrared laser diode high power output type pulse 180mW . This is the best for optical disk drive use, such as CD-R/RW. !Applications Max. X32 speed CD-R/RW drives. !Features 1) Absolute maximum optical power output : pulse 180mW
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RLD78PZW2
RLD78PZW2
180mW)
180mW
784nm
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RLD78PZW2
Abstract: optical disk drive laser diode RW
Text: RLD78PZW2 Laser Diodes AlGaAs laser diode RLD78PZW2 The RLD78PZW2 is infrared laser diode high power output type pulse 180mW . This is the best for optical disk drive use, such as CD-R/RW. !Applications Max. X32 speed CD-R/RW drives. !Features 1) Absolute maximum optical power output : pulse 180mW
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RLD78PZW2
RLD78PZW2
180mW)
180mW
784nm
optical disk drive
laser diode RW
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BPW17N
Abstract: CQY37N BPW17
Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical
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CQY37N
CQY37N
BPW17N
D-74025
15-Jul-96
BPW17
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
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TAC9
Abstract: No abstract text available
Text: LM96063 LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control Literature Number: SNIS149A LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • Integrated PWM fan speed control output supports high
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LM96063
LM96063
SNIS149A
2N3904,
TAC9
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
diode Lz 66
diode LZ. 58
BZX84C20
BZX84-C27
diode marking w8
BZX84-C5V1
BZX84C18
diode marking x6
BZX84-C15
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TDD13C
Abstract: amp milliard gw diode Mullard Diode rc amplifier
Text: Milliard DOUBLE-DIODE-TRIODE The TDD 13c is an indirectly heated double-diode-triode for use as combined detector and L.F. amplifier and for the application of automatic volume control in D.C./A.C. mains receivers. HEATER CHARACTERISTICS DIMENSIONS Heater Voltage . Vf=X3-o volts. Overall Length . =128 mm.
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TDD13C
Time--60
amp milliard
gw diode
Mullard Diode
rc amplifier
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Untitled
Abstract: No abstract text available
Text: SONY SLD323V High Power Density 1 W Laser Diode Description Package Outline_ Unit : mm The S L 0323V is a high power, gain-guided laser diode it r ir « A t a produced by MOCVD method*'. Compared to the SLD300 Series, this laser diode has a high brightness
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SLD323V
SLD300
00ED1D1
002D102
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {D IS CRET E/ OP TO } 9097250 TOSHIBA TT <DISCRETE/OPTO De | TDT7SS0 0017477 99D 17477 D T-W-X3 TLP580, TLP58I GaAlAs Infrared Emitting Diode & NPN Silicon Photo-Transisotr The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a
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TLP580,
TLP58I
TLP580
TLP581
1200Vdc
750Vac
900Vdc
DIN40045
0D1747Ã
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Untitled
Abstract: No abstract text available
Text: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics
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ERE24*
ERE74
I95t/R89)
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tes 1310
Abstract: No abstract text available
Text: DATA SHEET NEC LASER DIODE MODULE N D L5733P RECTBON DEVICE 1 310nm InGaAsP DC-PBH LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESCRIPTIO N NDL5733P is a 1310 nm laser diode DIP m odule w ith singlemode fib e r and internal therm o-electric cooler. It is designed fo r a
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L5733P
310nm
NDL5733P
NDL5717P
NDL5720P
NDL5731P
NOL5733P
NDL5735PA
NDL5736PA
NDL5730P
tes 1310
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