Untitled
Abstract: No abstract text available
Text: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
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94965B
IRF1010EPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
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94965B
IRF1010EPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
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IRF1010EPbF
O-220
fo20AB
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AT64A
Abstract: 0965 TRANSISTOR PE53188 United Chemi-Con series PE-53188 ablebond Ablebond 84-1 LMIT EL75XX PE-5318 intel 2758
Text: Designing a High Efficiency DC-DC Converter with the EL75XX by Mike Wong Table of Contents Since the beginning of the digital revolution the speed of a microprocessor has been governed by Moore’s law postulated in 1968 by Intel’s cofounder Gorden Moore Moore suggested that the
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EL75XX
AT64A
0965 TRANSISTOR
PE53188
United Chemi-Con series
PE-53188
ablebond
Ablebond 84-1 LMIT
EL75XX
PE-5318
intel 2758
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2N03L08
Abstract: SPP73N03S2L-08 smd diode 36A smd diode 434 36A SPB73N03S2L-08 DIODE smd 434 2N03L08 2N03L08
Text: SPP73N03S2L-08 SPB73N03S2L-08 Preliminary data OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) 8.4 m ID 73 A P-TO263-3-2 V P-TO220-3-1 Superior thermal resistance
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SPP73N03S2L-08
SPB73N03S2L-08
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67042-S4037
2N03L08
P-TO263-3-2
2N03L08
SPP73N03S2L-08
smd diode 36A
smd diode 434 36A
SPB73N03S2L-08
DIODE smd 434
2N03L08 2N03L08
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AN-994
Abstract: IRF1010EL IRF1010ES IRF530S
Text: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V
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IRF1010ES)
IRF1010EL)
IRF1010ESPbF
IRF1010ELPbF
EIA-418.
AN-994
IRF1010EL
IRF1010ES
IRF530S
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Untitled
Abstract: No abstract text available
Text: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V
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IRF1010ES)
IRF1010EL)
IRF1010ESPbF
IRF1010ELPbF
EIA-418.
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AN-994
Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
Text: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V
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IRF1010ES)
IRF1010EL)
IRF1010ESPbF
IRF1010ELPbF
EIA-418.
AN-994
IRF1010EL
IRF1010ES
IRF530S
IRF1010ELPBF
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AN-994
Abstract: IRF1010EZ IRF1010EZL IRF1010EZS
Text: PD - 95483 AUTOMOTIVE MOSFET Features O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax O Lead-Free O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
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IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
EIA-418.
O-220AB
AN-994
IRF1010EZ
IRF1010EZL
IRF1010EZS
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EIA-541
Abstract: No abstract text available
Text: PD - 96115A IRF9952QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3
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6115A
IRF9952QPbF
avalan61
EIA-481
EIA-541.
EIA-541
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Untitled
Abstract: No abstract text available
Text: SS2P5, SS2P6 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses
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J-STD-020,
AEC-Q101
DO-220AA
DO-220AAelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SS2PH9, SS2PH10 www.vishay.com Vishay General Semiconductor High Voltage Surface Mount Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available
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SS2PH10
J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SS1P3L, SS1P4L www.vishay.com Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SS2P2L, SS2P3L www.vishay.com Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SS2P2, SS2P3, SS2P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Glass passivated chip junction
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J-STD-020,
DO-220AA
AEC-Q101
92electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SS2P2L, SS2P3L www.vishay.com Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses
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Original
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SS3P3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: ESH1PB, ESH1PC, ESH1PD www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement eSMP Series • Glass passivated pallet chip junction
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SS1P5L, SS1P6L www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: ESH2PB, ESH2PC, ESH2PD www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Glass passivated chip junction
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PDF
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J-STD-020,
DO-220AA
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SS3P3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses
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Original
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SS2PH9, SS2PH10 www.vishay.com Vishay General Semiconductor High Voltage Surface Mount Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available
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Original
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PDF
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SS2PH10
J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: RS1PB, RS1PD, RS1PG, RS1PJ www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Fast Switching Rectifier FEATURES eSMP Series • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement
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J-STD-020,
DO-220AA
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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